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    13MH INDUCTOR DESIGN Search Results

    13MH INDUCTOR DESIGN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    13MH INDUCTOR DESIGN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TO-3P-5L

    Abstract: KA1H0680
    Text: www.fairchildsemi.com KA1H0680B SPS Features Description • • • • • • • • • The SPS product family is specially designed for an offline SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM


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    KA1H0680B 100kHz) TO-3P-5L KA1H0680 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94507 IRF7488 HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001 l Fully Characterized Avalanche Voltage


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    IRF7488 AN1001) PDF

    AN1001

    Abstract: F7101 IRF7101 IRF7488
    Text: PD - 94507 IRF7488 HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001 l Fully Characterized Avalanche Voltage


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    IRF7488 AN1001) EIA-541. AN1001 F7101 IRF7101 IRF7488 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U9120N D -P ak T O -2 52 A A l l l l l l l I-P ak T O -25 1 A A Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description D VDSS = -100V The D-Pak is designed for surface mounting using vapor


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    IRFR/U9120N IRFR9120N) IRFU9120N) -100V O-252AA PDF

    IRFIB8N50K

    Abstract: No abstract text available
    Text: PD - 94444A SMPS MOSFET IRFIB8N50K Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple Drive Requirement


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    4444A IRFIB8N50K O-220 I840G O-22O IRFIB8N50K PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95751 SMPS MOSFET IRFIB8N50KPbF Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching l Lead-Free HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple


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    IRFIB8N50KPbF O-220 I840G O-22O PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


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    PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95283 IRF7488PbF HEXFET Power MOSFET Applications l l VDSS 80V High frequency DC-DC converters Lead-Free RDS on max 29mW@VGS=10V Benefits 1 8 S 2 7 S 3 6 4 5 S l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    IRF7488PbF AN1001) PDF

    EER2834

    Abstract: q817 FS7M0680R q817 opto 1v Zener diode NTC 4,7 ntc 4.7 ydtu ntc 5d-9 bobbin EER
    Text: www.fairchildsemi.com FS7M0680 Fairchild Power Switch FPS Features Description • • • • • • • • • • • The Fairchild Power Switch (FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch (FPS) consists of high voltage power SenseFET and current mode PWM controller. The


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    FS7M0680 EER2834 q817 FS7M0680R q817 opto 1v Zener diode NTC 4,7 ntc 4.7 ydtu ntc 5d-9 bobbin EER PDF

    AN-6961

    Abstract: an6961 FAN6961 19v 4.74A 19V DC 90w KBP205G 19V 4.74A POWER SUPPLY 13mh inductor design PFC inductor ZCD pwm controller
    Text: www.fairchildsemi.com AN-6961 Critical Conduction Mode PFC Controller Description Introduction This application note describes a power factor correction PFC circuit using the FAN6961. Both the features of this controller, as well as the operation of the power factor


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    AN-6961 FAN6961. FAN6961 AN-6961 an6961 19v 4.74A 19V DC 90w KBP205G 19V 4.74A POWER SUPPLY 13mh inductor design PFC inductor ZCD pwm controller PDF

    IRFR9120N

    Abstract: IRFU9120N
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


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    PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V IRFR/U9120NPbF O-252AA) EIA-481 EIA-541. IRFR9120N IRFU9120N PDF

    irf 100v 300A

    Abstract: MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


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    PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481. irf 100v 300A MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101
    Text: PD - 95283 IRF7488PbF HEXFET Power MOSFET Applications l l VDSS 80V High frequency DC-DC converters Lead-Free RDS on max 29mW@VGS=10V Benefits 1 8 S 2 7 S 3 6 4 5 S l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    IRF7488PbF AN1001) VGSIA-541. AN1001 EIA-541 F7101 IRF7101 PDF

    MOSFET 400V TO-220

    Abstract: IRFIB8N50K
    Text: PD - 94444 SMPS MOSFET Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching IRFIB8N50K HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple Drive Requirement


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    IRFIB8N50K O-220 O-22O MOSFET 400V TO-220 IRFIB8N50K PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95751 SMPS MOSFET IRFIB8N50KPbF Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching l Lead-Free HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple


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    IRFIB8N50KPbF O-220 12-Mar-07 PDF

    IRFIB8N50K

    Abstract: No abstract text available
    Text: PD - 94444A SMPS MOSFET IRFIB8N50K Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple Drive Requirement


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    4444A IRFIB8N50K O-220 12-Mar-07 IRFIB8N50K PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95751 SMPS MOSFET IRFIB8N50KPbF Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching l Lead-Free HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple


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    IRFIB8N50KPbF O-220 08-Mar-07 PDF

    transistor ka7805

    Abstract: 6m07652r DIODE tvr10g 470uf, 25v electrolytic capacitor TVR10G 6m07652 KA7805 voltage regulator efd3030 Ka7805 voltage KA7805
    Text: www.fairchildsemi.com Application Note 4116 A Fairchild Power Switch FPS based on Switched Mode Power Supply for LCD Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The


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    PDF

    TVR10G

    Abstract: 6m07652r efd3030 AN-4116 5D-9 ntc 240V A.C. to 9V D.C. converter capacitor polyester 100n 400v 6m07652 TRANSISTOR c104 AN4116
    Text: www.fairchildsemi.com Application Note 4116 A Fairchild Power Switch SPS based on Switched Mode Power Supply for LCD Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The


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    PDF

    DIODE tvr10g

    Abstract: 6m07652r TVR10G transistor ka7805 ntc 5D-9 capacitor polyester 100n 400v FS6M07652R 470uf, 25v electrolytic capacitor 2KBP06M/3N257 Ka7805 diagram
    Text: www.fairchildsemi.com Application Note 4116 A Fairchild Power Switch FPS based on Switched Mode Power Supply for LCD Monitor Use 1. Introduction This application note describes a complete flyback switched mode power supply that uses a Fairchild Power Switch. The


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    PDF

    MOSFET IRF 380

    Abstract: No abstract text available
    Text: PD - 95020 IRFR/U9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


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    IRFR/U9120NPbF IRFR9120N) IRFU9120N) -100V O-252AA) EIA-481 EIA-541. EIA-481. MOSFET IRF 380 PDF

    smd fl014

    Abstract: FL014 314P smd diode marking code ax l014
    Text: PD- 95223 IRLL3303PbF Surface Mount l Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance l Lead-Free Description HEXFET Power MOSFET l D VDSS = 30V RDS on = 0.031Ω


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    IRLL3303PbF OT-223 smd fl014 FL014 314P smd diode marking code ax l014 PDF

    IRFU9120N

    Abstract: IRFR9120N
    Text: PD - 9.1507A PRELIMINARY IRFR/U9120N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.48Ω


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    IRFR/U9120N IRFR9120N) IRFU9120N) -100V IRFU9120N IRFR9120N PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 4 0 0 V / hs PROTECTED OUTPUT STAGE — Thermal shutoff EXCELLENT LINEARITY — Class A /B output WIDE SUPPLY RANGE — ±12V to ±40V


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    150MHz PDF