NTE2374
Abstract: No abstract text available
Text: NTE2374 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
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NTE2374
NTE2374
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NTE2385
Abstract: No abstract text available
Text: NTE2385 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A
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NTE2385
NTE2385
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NTE2379
Abstract: No abstract text available
Text: NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
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NTE2379
NTE2379
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NTE2904
Abstract: C62C
Text: NTE2904 MOSFET N-Ch, Enhancement Mode High Speed Switch Features: D Advanced Process Technology D Ultra Low On-Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID
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NTE2904
Dissipation32A,
00A/s,
NTE2904
C62C
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triac gate drive circuit
Abstract: IGBT light DIMMER igbt dimmer IGBT/MOSFET Gate Drive driving mosfet/igbt with pulse transformer driver "reverse phase control" igbt dimmer TRIAC dimmer control an5183 reverse phase control igbt dimmer ZENER DIODE t2
Text: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles
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N-Channel Enhancemen-Mode MOSFET
Abstract: NTE2386
Text: NTE2386 MOSFET N–Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power
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NTE2386
NTE2386
N-Channel Enhancemen-Mode MOSFET
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NTE2397
Abstract: Transistor Mosfet N-CH 200V 40A
Text: NTE2397 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
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NTE2397
NTE2397
Transistor Mosfet N-CH 200V 40A
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NTE2399
Abstract: No abstract text available
Text: NTE2399 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A
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NTE2399
NTE2399
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NTE2900
Abstract: NTE290
Text: NTE2900 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
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NTE2900
NTE2900
NTE290
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igbt dimmer
Abstract: IGBT light DIMMER "reverse phase control" igbt dimmer reverse phase control igbt dimmer DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs light dimmer igbt STGP10N50 AN486 topologies pulse transformer driver IGBT APPLICATION LC filter dimmer Triac
Text: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles
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Untitled
Abstract: No abstract text available
Text: NTE2373 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A
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NTE2373
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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2601
Abstract: No abstract text available
Text: PART NAME PART No. NEMA 4X ENCLOSURE NOTE: INDUSTRY STANDARDS! POLYCARBONATE LIGHT GRAY AND CLEAR U L94V -2 FLAMMABILITY RATING (UL FILE UV STABILIZED SERVICE TEMPERATURE RANGE: -40*C TD ABS (DARK GRAY) UL94-HB FLAMMABILITY RATING (UL FILE SERVICE TEMPERATURE RANGE: -40*C TD
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IE41613)
E56070)
PNR-2600,
PNR-2601,
PNR-2600-C
PNR-2601-C
PNR-2600-DG
PNR-2601-DG
UL94-HB
PNR-2600
2601
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Untitled
Abstract: No abstract text available
Text: 7 8 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 6 5 3 4 2 ,19 LOC DIST DF ALL INTERNATIONAL RIGHTS RESERVED. 1 DO REVISIONS ZONE LTR DESCRIPTION L REV PER 0600-6687-97 JY
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13-MJ6-98
anpt3037
e/aiipt3037/ediimod
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