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    1400V Search Results

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    THVD1400VDRCR Texas Instruments 3-V to 5.5-V half-duplex RS-485 transceiver with flexible I/O and slew rate control 10-VSON -40 to 125 Visit Texas Instruments
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    1400V Price and Stock

    Panasonic Electronic Components ERJ-8ENF1400V

    RES SMD 140 OHM 1% 1/4W 1206
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    DigiKey ERJ-8ENF1400V Cut Tape 15,303 1
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    ERJ-8ENF1400V Digi-Reel 15,303 1
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    Bristol Electronics ERJ-8ENF1400V 2,664
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    Master Electronics ERJ-8ENF1400V 100,000
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    Panasonic Electronic Components ERA-8AEB1400V

    RES SMD 140 OHM 0.1% 1/4W 1206
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    DigiKey ERA-8AEB1400V Digi-Reel 13,551 1
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    ERA-8AEB1400V Cut Tape 13,551 1
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    ERA-8AEB1400V Reel 10,000 5,000
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    Mouser Electronics ERA-8AEB1400V 7,686
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    Master Electronics ERA-8AEB1400V
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    Panasonic Electronic Components ERA-6AEB1400V

    RES SMD 140 OHM 0.1% 1/8W 0805
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    DigiKey ERA-6AEB1400V Digi-Reel 8,208 1
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    ERA-6AEB1400V Cut Tape 8,208 1
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    Mouser Electronics ERA-6AEB1400V 14,911
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    Panasonic Electronic Components ERJ-PA3D1400V

    RES SMD 140 OHM 0.5% 1/3W 0603
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    DigiKey ERJ-PA3D1400V Cut Tape 8,102 1
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    ERJ-PA3D1400V Digi-Reel 8,102 1
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    ERJ-PA3D1400V Reel 5,000 5,000
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    Avnet Americas ERJ-PA3D1400V Reel 18 Weeks 5,000
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    Master Electronics ERJ-PA3D1400V
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    Texas Instruments THVD1400VDRCR

    IC TRANSCEIVER HALF 1/1 10VSON
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    DigiKey THVD1400VDRCR Cut Tape 3,386 1
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    THVD1400VDRCR Digi-Reel 3,386 1
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    Mouser Electronics THVD1400VDRCR 4,672
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    1400V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2-Pack IGBT 1400V 300A 2MBI 300P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications


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    300P-140 PDF

    ultrasonic generator 40khz

    Abstract: GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 1200 w 40khz 40KHZ ULTRASONIC asymmetric thyristor asymmetric thyristor datasheet DF451 TA329 RC snubber diode TA32910Q
    Text: TA329.Q TA329.Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs APPLICATIONS • High Frequency Applications


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    TA329. DS4680-2 DS4680-3 400Hz 40kHz ultrasonic generator 40khz GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 1200 w 40khz 40KHZ ULTRASONIC asymmetric thyristor asymmetric thyristor datasheet DF451 TA329 RC snubber diode TA32910Q PDF

    TS2422

    Abstract: GS12 TS20 TS22 TS24 TS27 T510S
    Text: Click on outline no. Fast Thyristors Type continued ITRMSM A VDRM VRRM V VDSM = VDRM VRSM = VRRM +100V up to 1400V continued T 408 F 1000.1300* I/TSM kA 10 ms Tvj max VT/IT V/kA Tvj max V TO V(TO) Tvj = Tvj max rT mΩ Tvj = Tvj max (di/dt)cr A/µs DIN


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: JANUARY 1996 TF915.B DS4279-2.1 TF915.B FAST SWITCHING THYRISTOR APPLICATIONS KEY PARAMETERS 1400V VDRM 1700A IT RMS 20000A ITSM dV/dt 300V/µs dI/dt 500A/µs 30µs tq • High Power Inverters And Choppers. ■ UPS. ■ Railway Traction. ■ Induction Heating.


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    TF915. DS4279-2 0000A TF915 MU169. PDF

    IXTT12N140

    Abstract: IXTH12N140
    Text: Advance Technical Information IXTT12N140 IXTH12N140 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1400V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXTT12N140 IXTH12N140 O-268 O-247 12N140 IXTH12N140 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2-Pack IGBT 1400V 100A 2MBI 100PC-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications


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    100PC-140 PDF

    a600g

    Abstract: No abstract text available
    Text: 2-Pack IGBT 1400V 150A 2MBI 150P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications


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    150P-140 a600g PDF

    IC12V

    Abstract: No abstract text available
    Text: 2-Pack IGBT 1400V 100A 2MBI 100P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications


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    100P-140 IC12V PDF

    866a RECTIFIER

    Abstract: AN4839 DS502ST DS502ST09 DS502ST10 DS502ST11 DS502ST12 DS502ST13 DS502ST14
    Text: DS502ST DS502ST Rectifier Diode Replaces January 2000 version, DS4794-3.0 DS4794-4.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 1400V ■ High Surge Capability IF AV 866A IFSM APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control


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    DS502ST DS4794-3 DS4794-4 DS502ST14 DS502ST13 DS502ST12 DS502ST11 DS502ST10 DS502ST09 866a RECTIFIER AN4839 DS502ST DS502ST09 DS502ST10 DS502ST11 DS502ST12 DS502ST13 DS502ST14 PDF

    75P-140

    Abstract: 2mbi 2MBI 75P-140
    Text: 2-Pack IGBT 1400V 75A 2MBI 75P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching


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    75P-140 1ms400V 75P-140 2mbi 2MBI 75P-140 PDF

    Untitled

    Abstract: No abstract text available
    Text: AUGUST 1995 DS402ST DS4183-2.2 DS402ST RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 1400V VRRM 505A IF AV 5600A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.


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    DS402ST DS4183-2 DS402ST14 DS402ST13 DS402ST12 DS402ST11 DS402ST10 DS402ST09 PDF

    IN75

    Abstract: MAX4142 MAX4142ESD MAX4144 MAX4147
    Text: 19-4763; Rev 0; 7/98 KIT ATION EVALU E L B A AVAIL 250MHz, Low-Power, High-Output-Current, Differential Line Driver _Features ♦ 250MHz -3dB Bandwidth AV = +2V/V ♦ 1400V/µs Slew Rate ♦ 67dB at 10MHz CMR ♦ 0.01%/0.01° Differential Gain/Phase


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    250MHz, 250MHz 10MHz 14-Pin MAX4142ESD MAX4142 10250MHz, IN75 MAX4142 MAX4142ESD MAX4144 MAX4147 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCES = IC90 = VCE sat ≤ tfi(typ) = IXSH35N140A High Voltage High speed IGBT Short Circuit SOA Capability 1400V 35A 4.0V 200ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1400 1400


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    IXSH35N140A 200ns O-247 35N140A 6-08-A PDF

    SOD-57

    Abstract: BYV36G
    Text: BYV36G SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 1400V CURRENT: 1.5A FEATURE SOD-57 Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability MECHANICAL DATA


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    BYV36G OD-57 OD-57 120mH SOD-57 BYV36G PDF

    TO-220F1

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD C6084 NPN SILICON TRANSISTOR SWITCHING REGULATOR APPLICATIONS 1 1 TO-220  TO-220F FEATURES * High Speed. * High Breakdown Voltage VCBO=1400V . * High Reliability. 1 1 TO-126 1 TO-3P 1 TO-263 TO-220F1 1 TO-220F2  ORDERING INFORMATION


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    C6084 O-220 O-220F O-126 O-263 O-220F1 O-220F2 C6084L-x-TA3 C6084G-x-TA3-T TO-220F1 PDF

    CM400HA-28H

    Abstract: CM75 IR module transistor 800v CM1000HA-28H CM100TF-28H CM200DY-28H CM300DY-28H CM50 CM600HA-28H
    Text: SWITCHING ENERGY 1400V CLASS H-SERIES IGBT MODULE 102 101 TURN-ON 100 100 100 101 102 COLLECTOR CURRENT, IC AMPERES 103 TURN-OFF SWITCHING, ESW (mJ/PULSE) CM1000HA-28H CM600HA-28H CM400HA-28H CM200DY-28H 101 CM75*-28H CM50~1000-28H (IC = Ir /10~Ir) CM100TF-28H


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    CM1000HA-28H CM600HA-28H CM400HA-28H CM200DY-28H 1000-28H CM100TF-28H CM300DY-28H 312/Ir CM600HA-28H: CM1000HA-28H: CM400HA-28H CM75 IR module transistor 800v CM1000HA-28H CM100TF-28H CM200DY-28H CM300DY-28H CM50 CM600HA-28H PDF

    DRD520T14

    Abstract: DRD520T
    Text: DRD520T14 Rectifier Diode DS5990 – 1 March 2011 LN28176 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 1400V 520A 5900A VOLTAGE RATINGS Part and Ordering Number DRD520T14 DRD520T12 DRD520T10 DRD520T08 DRD520T06


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    DRD520T14 DS5990 LN28176) DRD520T14 DRD520T12 DRD520T10 DRD520T08 DRD520T06 DRD520T PDF

    DRD3220X14

    Abstract: No abstract text available
    Text: DRD3220X14 Rectifier Diode DS5994 – 1 March 2011 LN28180 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 1400V 3220A 35800A VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VRRM V DRD3220X14 DRD3220X12


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    DRD3220X14 DS5994 LN28180) 5800A DRD3220X14 DRD3220X12 DRD3220X10 DRD3220X08 DRD3220X06 PDF

    300A thyristor gate control circuit

    Abstract: DCR504ST DCR504ST10 DCR504ST11 DCR504ST12 DCR504ST13 DCR504ST14 DS4448
    Text: DCR504ST DCR504ST Phase Control Thyristor Advance Information Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 1400V IT AV 456A ITSM 6800A dVdt 1000V/µs dI/dt 700A/µs ■ High Surge Capability


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    DCR504ST 2000version, DS4448 DCR504ST14 DCR504ST13 DCR504ST12 DCR504ST11 DCR504ST10 300A thyristor gate control circuit DCR504ST DCR504ST10 DCR504ST11 DCR504ST12 DCR504ST13 DCR504ST14 PDF

    2MBI200PB-140

    Abstract: dc ac inverter schematic igbt ac servo amplifier schematic 200A inverter IGBT 600V 200A 2MBI igbt module Power INVERTER schematic circuit M235 IGBT parallel
    Text: 2MBI200PB-140 IGBT Module P-Series 1400V / 200A 2 in one-package Features • Small temperature dependence of the turn-off switching loss · Easy to connect in parallel · Wide RBSOA square up to 2 time of rated current and high shortcircuit withstand capability


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    2MBI200PB-140 2MBI200PB-140 dc ac inverter schematic igbt ac servo amplifier schematic 200A inverter IGBT 600V 200A 2MBI igbt module Power INVERTER schematic circuit M235 IGBT parallel PDF

    a431-4a

    Abstract: No abstract text available
    Text: 3 M Ä « H A 4 3 1 4 , H A 4 3 1 4 A W i d e b a n d , 4 x 1 V id e o juiy 1995 C r o s s p o in t S w itc h F eatu re s D e s c rip tio n • Lo w P o w er D is s ip a tio n . 105m W • S y m m e tric al S le w R a t e s . 1400V /p s


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    HA4314, HA4314A 250mV 200ns/DIV a431-4a PDF

    Untitled

    Abstract: No abstract text available
    Text: DS502ST M ITEL Rectifier Diode SEMICONDUCTOR Supersedes Novem ber 1997 version, DS4794 - 2.3 DS4794 - 2.4 March 1998 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS v RRM 1400V 540A Jf AV 8000A


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    DS4794 DS502ST DS502ST14 DS502ST13 DS502ST12 DS502ST11 DS502ST10 DS502ST09 PDF

    TA32910Q

    Abstract: No abstract text available
    Text: M ITEL TA329.Q Asymmetric Thyristor S E M IC O N D U C T O R DS4680 - 2.1 Supersedes January 1997 version, DS4680 - 2.0 KEY PARAMETERS 1400V DRM 370A ^T RMS 2000A ^TSM dVdt 1000V/|iS d l/d t 1000A/|iS t. 7.0(iS APPLICATIONS • High Frequency Applications.


    OCR Scan
    DS4680 TA329. TA32910Q PDF

    Untitled

    Abstract: No abstract text available
    Text: 7.50 + 0.25 3.50 + 0.10 Wm 3.70 + 0.25 Circuit 1 S P E C IF IC A T IO N S C urrent Rating: 1A AC,DC Voltage Rating: 1400V AC,DC Tem perature Range: —25”C ~ + 8 5 ‘ C C ontact Resistance: 10mQ Max Insulation Resistance: 1000MQ Min W ithstanding Voltage: 3800V A C /m in u te


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    1000MQ A3500HM-02P PDF