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Littelfuse Inc IXFR140N20P MOSFET N-CH 200V 90A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR140N20P	Tube	4,537		1	1 $15.4 10 $15.4 100 $10.75733 1000 $10.75733 10000 $10.75733	Buy Now
RS	IXFR140N20P	Bulk		8 Weeks	30	1 - 10 - 100 $16.64 1000 $16.64 10000 $16.64	Get Quote
Littelfuse Inc IXFK140N20P MOSFET N-CH 200V 140A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK140N20P	Tube	350		1	1 $10.61 10 $10.61 100 $9.3244 1000 $9.3244 10000 $9.3244	Buy Now
Newark	IXFK140N20P	Bulk			300	1 - 10 - 100 - 1000 $9.78 10000 $9.78	Buy Now
RS	IXFK140N20P	Bulk		8 Weeks	25	1 - 10 - 100 $14.42 1000 $14.42 10000 $14.42	Get Quote
Littelfuse Inc IXFN140N20P MOSFET N-CH 200V 115A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN140N20P	Tube	125		1	1 $25.83 10 $19.501 100 $25.83 1000 $25.83 10000 $25.83	Buy Now
Newark	IXFN140N20P	Bulk	104		1	1 $16.98 10 $16.98 100 $16.98 1000 $16.98 10000 $16.98	Buy Now
RS	IXFN140N20P	Bulk		8 Weeks	10	1 - 10 $27.89 100 $27.89 1000 $27.89 10000 $27.89	Get Quote
Littelfuse Inc IXTK140N20P MOSFET N-CH 200V 140A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTK140N20P	Tube			300	1 - 10 - 100 - 1000 $9.08227 10000 $9.08227	Buy Now
IXYS Corporation IXTK140N20P MOSFETs 140 Amps 200V 0.018 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTK140N20P		923			1 $14.87 10 $14.83 100 $12.46 1000 $10.63 10000 $10.63	Buy Now
Newark	IXTK140N20P	Bulk	217		1	1 $11.71 10 $11.71 100 $11.71 1000 $11.71 10000 $11.71	Buy Now
TTI	IXTK140N20P	Tube			300	1 - 10 - 100 - 1000 $9.26 10000 $9.08	Buy Now
TME	IXTK140N20P				1	1 $14.06 10 $10.2 100 $10.2 1000 $10.1 10000 $10.1	Get Quote
New Advantage Corporation	IXTK140N20P		150		1	1 - 10 - 100 $22.21 1000 $20.73 10000 $20.73	Buy Now

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140N20P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ ≤ 200 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	140N20P	PDF
140N20P Abstract: IXYS SP Text: Preliminary Technical Information PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on = 18 mΩ ≤ 150 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C	Original	140N20P 405B2 140N20P IXYS SP	PDF
140N20P Abstract: IXfk 75 N 50 140N20 Text: PolarHTTMHiPerFET Power MOSFET IXFK 140N20P VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	140N20P 140N20P IXfk 75 N 50 140N20	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 200 V = 90 A Ω = 22 mΩ ≤ 150 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions	Original	140N20P ISOPLUS247TM 140N20P	PDF
140N20 Abstract: No abstract text available Text: PolarHTTM Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS VGSM	Original	140N20P 140N20	PDF
Untitled Abstract: No abstract text available Text: PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 90 A RDS on ≤ 22 m Ω ≤ 200 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	140N20P ISOPLUS247TM ISOPLUS247 E153432	PDF
140N20P Abstract: 140N2 140N20 Text: PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A Ω RDS on ≤ 18 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	140N20P OT-227 E153432 01-23-06-B 140N20P 140N2 140N20	PDF
ISOPLUS247 Abstract: No abstract text available Text: Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 75 A Ω RDS on = 22 mΩ ≤ 150 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode Symbol	Original	140N20P ISOPLUS247TM 405B2 ISOPLUS247	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	140N20P	PDF
Untitled Abstract: No abstract text available Text: PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A Ω RDS on ≤ 18 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	140N20P 01-23-06-B	PDF
IXTK140N20P Abstract: N-channel enhancement 70A Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 140N20P VDSS ID25 RDS on = 200 V = 140 A Ω = 18 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25	Original	140N20P O-264 IXTK140N20P N-channel enhancement 70A	PDF
140N20 Abstract: 140N2 Text: PolarHTTM Power MOSFET IXTK 140N20P VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient	Original	140N20P 140N20 140N2	PDF
140N2 Abstract: ISOPLUS247 Text: PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 90 A RDS on ≤ 22 m Ω ≤ 200 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	140N20P ISOPLUS247TM 140N2 ISOPLUS247	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF

DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP	PDF

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140N20P Search Results

140N20P Price and Stock

Littelfuse Inc IXFR140N20P

Littelfuse Inc IXFK140N20P

Littelfuse Inc IXFN140N20P

Littelfuse Inc IXTK140N20P

IXYS Corporation IXTK140N20P

140N20P Datasheets Context Search

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140N20P

140N20P

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140N20

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140N20P

ISOPLUS247

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IXTK140N20P

140N20

140N2

IXTD08N100P-1A

DIODE 1334