UF703450F
Abstract: 0715A 2860A 1480mA
Text: Jul. 09 Cell Type UF703450F Specifications Nominal Capacity Typical Capacity Nominal Voltage ｗ Ｔ Min.1430mAh 1480mAh 3.7V Constant Current -Constant Voltage 4.2V Std. 1430mA 3.0hrs. 0~+40℃ -20∼+60℃ -20∼+50℃ 28.1g 7.00mm 33.85mm 49.80mm 448Wh/l
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UF703450F
1430mAh
1480mAh
1430mA
448Wh/l
UF703450F
0715A
2860A
1480mA
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CQX 86
Abstract: U832 write-verify RaR8 81 u218 A09T
Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DTE/DM512K72DTE
512Kb
64/512Kb
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U832
write-verify
RaR8 81
u218
A09T
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Untitled
Abstract: No abstract text available
Text: TGA4536-SM K-Band Power Amplifier Applications TriQuint Point-to-Point Radio K-band Sat-Com TGA4536SM 1201 MAL AC0490 28 lead 5x5mm QFN package 27 VREF 28 VD3 Frequency Range: 24.2 – 26.5 GHz Power: 34 dBm Psat, 33 dBm P1dB Gain: 18 dB TOI: 43 dBm at 23 dBm/tone
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TGA4536-SM
TGA4536SM
AC0490
TGA4536-SM
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artesyn Application Note 193
Abstract: PTH12040 astec ps PTH12040W PTH12040WAST PTH12040WAZT polymer capacitor 560uf 6.3V
Text: NEW Product PTH12040 12Vin Single Application Note 193 1. Introduction 2 2. System Interface Information Input Capacitor Output Capacitance Tantalum Capacitors Ceramic Capacitors Capacitor Table Designing for Very Fast Load Transients Recommended Input/Output Capacitors
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PTH12040
12Vin
artesyn Application Note 193
astec ps
PTH12040W
PTH12040WAST
PTH12040WAZT
polymer capacitor 560uf 6.3V
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Untitled
Abstract: No abstract text available
Text: TGA4534-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio K-band Sat-Com TGA4534SM 1201 MAL AC0753 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 17.7 – 19.7 GHz Power: 34 dBm Psat, 33 dBm P1dB Gain: 21 dB TOI: 42.5 dBm at 23 dBm/tone
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TGA4534-SM
TGA4534SM
AC0753
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U10A-14
Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DT6/DM512K72DT6
512Kb
64/512Kb
168BD5-TR
DM512K72DT
72-bit
U10A-14
U11A-8
CQX 86
512kx8 dram simm
cqx 87
u12A
U11C
U832
U12A-14
u318
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Untitled
Abstract: No abstract text available
Text: TGA4534-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio K-band Sat-Com TGA4534SM 1201 MAL AC0753 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 17.7 – 19.7 GHz Power: 34 dBm Psat, 33 dBm P1dB Gain: 21 dB TOI: 42.5 dBm at 23 dBm/tone
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TGA4534-SM
TGA4534SM
AC0753
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smd Diode 1430
Abstract: No abstract text available
Text: TGA4534-SM K-Band Power Amplifier Applications TriQuint Point-to-Point Radio K-band Sat-Com TGA4534SM 1201 MAL AC0753 28-pin 5x5mm QFN package 27 VREF 28 VD3 Frequency Range: 17.7 – 19.7 GHz Power: 34 dBm Psat, 33 dBm P1dB Gain: 21 dB TOI: 42.5 dBm at 23 dBm/tone
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TGA4534-SM
TGA4534SM
AC0753
28-pin
TGA4534-SM
smd Diode 1430
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Untitled
Abstract: No abstract text available
Text: TGA4536-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio K-band Sat-Com TGA4536SM 1201 MAL AC0490 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 24.2 – 26.5 GHz Power: 34 dBm Psat, 33 dBm P1dB Gain: 18 dB TOI: 43 dBm at 23 dBm/tone
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TGA4536-SM
TGA4536SM
AC0490
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C2950-111
Abstract: ICR18500A150 over discharge protection CYCOLOY C2950-111 3.7v 1500mA battery C2950 NP-F10 1500mAH cycoloy c2950 SSF21
Text: SPEC. NO. DESCRIPTION SSF21 ISSUE DATE Lithium Ion Battery EDITION 2008-6-2 PAGE 1/1 1. Applicability The specification is applicable to Lithium Ion Rechargeable batteries model no. : SSF21 . 2. Ratings 2.1 Cell 2.1.1 Type of Cell 2.1.2 Cell Model : Sealed Lithium-ion Cylindrical
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SSF21
SSF21)
ICR18500A150
1500mAh
1430mAh
1500mA
300ter
C2950-111
ICR18500A150
over discharge protection
CYCOLOY C2950-111
3.7v 1500mA battery
C2950
NP-F10
1500mAH
cycoloy c2950
SSF21
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Untitled
Abstract: No abstract text available
Text: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache
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DM512K64DTBDM512K72DTE
/512Kb
168BD5-TR
72-bit
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Untitled
Abstract: No abstract text available
Text: REV. S tatu s 1 . Electrical specifications 1.1 Input voltage: AC 120V ± 1 0 % 60 Hz ± 0 .5 Hz 1.2 Output voltage and current: AC 14V at 1430m A Yin 1430m A Load 108 11.2 VAC MIN 120 1 3 .0 -1 4 .5 VAC 132 - ISSU E 1 2 / 2 1 / 9 2 YN ISSU E 2 4 / 2 8 / 9 2 YN
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1430mA
1430mA
143mA
1500Vrms
ACAD\PS\A7000821
830A0062â
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ESI 2160
Abstract: u332 U11B2 cqx 87 u918
Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64D
6/DM512K720T6MultibankEDO
512Kb
DM512K72DT6-12
72-blt
ESI 2160
u332
U11B2
cqx 87
u918
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Untitled
Abstract: No abstract text available
Text: Enhanced IVfemoiySuterns be. DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 12 Enhanced DRAM DIMM Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multi bank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DT6/DM512K72DT6
64/512Kb
72-bit
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