HFA-0002
Abstract: HFA2-0002-5 HFA2-0002-9 HFA3-0002-5 HFA3-0002-9 HFA7-0002-5 HFA7-0002-9 HFA9P0002-5 HFA9P0002-9
Text: HFA-0002 Semiconductor September 1998 See CT ODUHFA1105 R P TE 1120, OLE OBS 100, HFA HFA1 Low Noise Wideband Operational Amplifier Features Description • Wide Gain Bandwidth Product . . . . . . . . . . . . . . . 1GHz The HFA-0002 is a very wideband, high slew rate, op amp,
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HFA-0002
HFA11
HFA-0002
05V/mV
100ns.
HFA2-0002-5
HFA2-0002-9
HFA3-0002-5
HFA3-0002-9
HFA7-0002-5
HFA7-0002-9
HFA9P0002-5
HFA9P0002-9
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2N3767
Abstract: LE17
Text: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N3767
143mW/
300us,
O-213AA)
2N3767
LE17
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2N3766
Abstract: transistor 2N3766
Text: NPN SILICON TRANSISTOR Semelab Limited 2N3766 • LOW SATURATION VOLTAGE • HIGH GAIN CHARACTERISTICS • HERMETICALLY SEALED TO-66 METAL PACKAGE • SCREENING OPTIONS AVAILABLE • SWITCHING APPLICATIONS • MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N3766
143mW/
O-213AA)
2N3766
transistor 2N3766
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5.1 dts amplifier circuit
Abstract: GRM31CR61C106K UDZSTE-176 vldoo TE85L paCKAGE transresistance amp 110V AC to 3V DC, 13v DC, 24v power EP10QY C2012X5R1A dts 5.1 amplifier circuit
Text: 19-5241; Rev 0; 4/10 TION KIT EVALUA BLE IL AVA A Internal-Switch Boost Regulator with Integrated 7-Channel Scan Driver, Op Amp, and LDO The MAX17117 includes a high-performance step-up regulator, a 350mA low-dropout LDO linear regulator, a high-speed operational amplifier, and a high-voltage
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MAX17117
350mA
128mW.
MAX17117
5.1 dts amplifier circuit
GRM31CR61C106K
UDZSTE-176
vldoo
TE85L paCKAGE
transresistance amp
110V AC to 3V DC, 13v DC, 24v power
EP10QY
C2012X5R1A
dts 5.1 amplifier circuit
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N3767
143mW/Â
300us,
O-213AA)
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202035A
Abstract: SCHEMATIC DIAGRAM adapter 12v 5A
Text: DATA SHEET AAT2689 PMIC Solution for 12V Adapter Systems with 2-Output High Performance Step-Down Converters General Description Features The AAT2689 provides two independently regulated DC outputs, consisting of a high voltage step-down Buck regulator and a low input voltage low dropout (LDO) regulator. The PMIC is optimized for low cost 12V adapter
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AAT2689
AAT2689
2500mA
490kHz
02035A
202035A
SCHEMATIC DIAGRAM adapter 12v 5A
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SCHEMATIC DIAGRAM adapter 12v 5A
Abstract: RCH108NP AAT2689 B340A BAS16 power adapter for notebook schematic linear regulator for 240v ac to 3.3v voltage
Text: PRODUCT DATASHEET AAT2689 SystemPowerTM PMIC Solution for 12V Adapter Systems with 2-Output High Performance Step-Down Converters General Description Features The AAT2689 provides two independently regulated DC outputs, consisting of a high voltage step-down Buck
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AAT2689
AAT2689
SCHEMATIC DIAGRAM adapter 12v 5A
RCH108NP
B340A
BAS16
power adapter for notebook schematic
linear regulator for 240v ac to 3.3v voltage
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C1093
Abstract: SLD9630TT C1079 2007-000162 BA68-40012N C1061 npn 470nF 50V X7R ics954 C347 C558 npn
Text: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung's authorization. 10.자재 리스트 10-1. Main Board X25 / X20(EXT Item No Design LOC Parts name Spec 0201-001002
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BA68-10191W
BA68-40005L
BA68-40012N
BA96-02726A
BA96-02728A
ALVISO500
49LW080
4x10mm
49LF008A
C1093
SLD9630TT
C1079
2007-000162
C1061 npn
470nF 50V X7R
ics954
C347
C558 npn
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24V 20A mosfet switch
Abstract: Y90H RL335 Y90L AS60A
Text: YB1901 2.0A High-Side Power Switch with Flag Description Features The YB1901 is a low operation voltage, single N-channel MOSFET high-side power switch, optimized for low power consumption system. A small internal charge-pump circuitry is built in the YB1901 to drive the internal MOSFET
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YB1901
YB1901
RYB1901
OT23-5)
24V 20A mosfet switch
Y90H
RL335
Y90L
AS60A
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HFA2-0002-5 Datasheet
Abstract: No abstract text available
Text: HFA-0002 T DUC 105 PRO 0, HFA1 enter at E T 112 rt C OLE c OBS 100, HFAal Suppo l.com/ts i c 1 i s r chn HFA nte See t our Te r www.i c o a t L n SI or co 8-INTER 1-88 September 1998 Low Noise Wideband Operational Amplifier Features Description • Wide Gain Bandwidth Product . . . . . . . . . . . . . . . 1GHz
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HFA-0002
HFA-0002
05V/mV
HFA2-0002-5 Datasheet
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ZO 127
Abstract: RT1250B6 RT1250B7 RT2250B6 RT2250B7
Text: LVPECL Terminators Technical Data Sheet RoHS Compliant Parts Available Features Description These integrated termination networks provide high performance line termination designs for both 2.5V & 3.3V LVPECL busses. Specifically designed shielding inside the package combined
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RT1250B6
RT2250B6
RT1251B6
RT2251B6
ZO 127
RT1250B6
RT1250B7
RT2250B6
RT2250B7
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AR6003
Abstract: SoC ARM cortex 64bit Hardware Manual
Text: TM August 2013 TM 2 • Learn about the Freescale i.MX 6 series of application processors’ key features, capabilities, uses and market segment targets • Learn about the Development Ecosystem available for the i.MX 6 Series family of processors • Understand the power and performance advantages of the
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ARM11
150MJuly
AR6003
SoC ARM cortex 64bit Hardware Manual
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LTCMN
Abstract: 6103f LT1990 p 6103 equivalent LT6100 LTC6103HMS8 LTC6103IMS8 CMPZ4697 LTC1540 LTC2436-1
Text: LTC6103 Dual High Voltage, High Side Current Sense Amplifier FEATURES DESCRIPTION • The LTC 6103 is a versatile, high voltage, high side, dual current sense amplifier. The two internal amplifiers are independent except that they share the same V– terminal.
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LTC6103
LTC6103
LTC4150
LT6100
LTC6101/LTC6101HV
LTC6104
6103f
LTCMN
6103f
LT1990
p 6103 equivalent
LT6100
LTC6103HMS8
LTC6103IMS8
CMPZ4697
LTC1540
LTC2436-1
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DDR2-400
Abstract: DDR2-533 PC2-4300 1167m
Text: TN-47-04: Calculating Memory System Power for DDR2 Introduction Technical Note Calculating Memory System Power for DDR2 Introduction This technical note details how DDR2 SDRAM consumes power, and it provides the tools system designers need to estimate power consumption in a given system. In addition to
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TN-47-04:
DDR2-533
09005aef812507c7/09005aef81257459
TN4704
DDR2-400
DDR2-533
PC2-4300
1167m
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Untitled
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR Semelab Limited 2N3766 • LOW SATURATION VOLTAGE • HIGH GAIN CHARACTERISTICS • HERMETICALLY SEALED TO-66 METAL PACKAGE • SCREENING OPTIONS AVAILABLE • SWITCHING APPLICATIONS • MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N3766
143mW/Â
100mA
O-213AA)
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XC503
Abstract: schematic diagram tv samsung AR5212 XC502 C568 ar5312 ZD5022 CT502 7S06 SOT23 d526 y
Text: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X30 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 42(Operation Block Diagram)
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DiagraA-062
A17-01-B-002
A02-02-A-001
A04-01-A-047
A09-01-A-089
LTST-C150GKT,
SLS-PGYE301-TM,
OT-25)
12513WR-04A0,
CIM10J121NES
XC503
schematic diagram tv samsung
AR5212
XC502
C568
ar5312
ZD5022
CT502
7S06 SOT23
d526 y
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LTCMN
Abstract: No abstract text available
Text: LTC6103 Dual High Voltage, High Side Current Sense Amplifier FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Two Independent Current Sense Amplifiers Wide Supply Range: 4V to 60V, 70V Absolute Maximum Low Offset Voltage: 450µV Maximum Fast Response: 1µs Response Time
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LTC6103
170nA
110dB
30nV/Â
LTC4150
LT6100
LTC6101/LTC6101HV
LTC6104
6103f
LTCMN
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409s
Abstract: MAX526DCWG MAX526 MAX526CCNG MAX526CCWG MAX526CENG MAX526DCNG MAX526DENG MAX527
Text: /l/l/JX I/l/l 19-4500; R e v 3; 2 /9 5 C a lib ra te d Q u ad 1 2 -B it V o lta g e -O u tp u t D/A C o n v e rte rs _F e a tu re s ♦ ♦ ♦ ♦ These devices feature double-buffered Interface logic with a 12-bit input register and a 12-blt DAC register. Data in the DAC
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12-Bit
MAX526/MAX527
12-bit,
MAX527
MAX526
MAX527DMYG
409s
MAX526DCWG
MAX526CCNG
MAX526CCWG
MAX526CENG
MAX526DCNG
MAX526DENG
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC59S6416AFT, TC59S6408AFT, TC59S6404AFT 1,048,576 WORDS X 4 BANK X 16 BITS 2,097,152 WORDS X 4 BANK X 8 BITS 4,194,304 WORDS X 4 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S6416FT is a CMOS synchronous dynamic random access memory organized as 1,048,576-words x4-banks x16-bits and
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TC59S6416AFT,
TC59S6408AFT,
TC59S6404AFT
TC59S6416FT
576-words
x16-bits
TC59S6408FTis
152-wordsx4-banks
andTC59S1604FTorganized
304-wordsx4-banks
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Untitled
Abstract: No abstract text available
Text: /l/l/J X I/l/l 19-4500; R e v 3; 2 /9 5 C a lib ra te d Q u ad 1 2 -B it V o lta g e -O u tp u t D/A C o n v e rte rs _ F e a tu re s ♦ ♦ ♦ ♦ These devices feature double-buffered Interface logic with a 12-bit input register and a 12-blt DAC register. Data in the DAC
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12-bit
12-blt
MAX526/MAX527
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Horizontal Transistor TT 2246
Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz
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HFA1105
HFA1115
350MHz
225MHz
000V/ps
50MHz.
Horizontal Transistor TT 2246
ca3080 spice
vogt transformer 406 69
CA3098 equivalent
ICL8038 applications advantages disadvantages
gi 9544
class d amplifier schematic hip4080
STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY
siemens transistor manual
BUF601
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AX526
Abstract: 1LS transistor AX674
Text: /l/l/J X I /l/l 19-4500; R e v 3; 2 /9 5 C a lib ra te d Q u ad 1 2 -B it V o lta g e -O u tp u t D/A C o n v e rte rs _F e a tu re s ♦ ♦ ♦ ♦ These devices feature double-buffered Interface logic with a 12-bit input register and a 12-blt DAC register. Data in the DAC
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12-Bit
MAX526)
MAX526/MAX527
12-bit,
MAX527
MAX526
MIL-STD-883.
AX526
1LS transistor
AX674
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Untitled
Abstract: No abstract text available
Text: H A R R HFA-0002 I S S E M I C O N D U C T O R Low Noise Wideband Operational Amplifier May 1997 Description Features Wide Gain Bandwidth Product. 1GHz High Slew Rate. 250V/ns
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HFA-0002
50V/ns
05V/mV
143mW
HFA-0002
100ns.
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HFA-0002
Abstract: No abstract text available
Text: H ARRIS H F A - O O 0 2 Low Noise W ideband O perational Am plifier May 1990 P in o u ts F e a tu re s • Wide Gain Bandwidth Product . 1G Hz • High Slew R a te . . . 250V /ps • High Open Loop G a in .
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05V/m
143mW
100ns.
HFA-0002
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