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Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link
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14H4505
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CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link
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Abstract: Abb diode 14H4505 a3700 5sdf14h4505
Text: Key Parameters VRRM = 4500 IFAVM = 1400 IFRMS = 2200 IFSM = 25 VF0 = 1.20 rF = 0.32 VDClink = 2200 V A A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 July 98 •Patented free-floating silicon technology •Low on-state and switching losses
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14H4505
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Abb diode
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Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1400 25x103 1.2 0.32 2200 V A A V mΩ V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO
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14H4505
5SYA1110-02
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