Untitled
Abstract: No abstract text available
Text: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
|
Original
|
PDF
|
Si7922DN
Si7922DN-T1-E3
Si7922DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Si2303CDS
Abstract: No abstract text available
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)
|
Original
|
PDF
|
Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
08-Apr-05
|
Si7884BDP-T1-E3
Abstract: Si7884BDP
Text: Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 21 nC APPLICATIONS COMPLIANT
|
Original
|
PDF
|
Si7884BDP
Si7884BDP-T1-E3
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)
|
Original
|
PDF
|
Si3473CDV
Si3473CDV-T1-E3
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: New Product Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V 14.1 12.2 20 18.9 VDS (V) Channel-1
|
Original
|
PDF
|
Si4340CDY
SO-14
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
|
Original
|
PDF
|
SUD50N03-09P
O-252
SUD50N03-09P-E3
08-Apr-05
|
ASM 117
Abstract: MAL2 085 vishay AXIAL ELECTROLYTIC capacitors 031-38229 03127101E3 031 AS
Text: 030/031 AS Vishay BCcomponents Aluminum Capacitors Axial Standard FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Axial leads, cylindrical aluminum case, RoHS COMPLIANT insulated with a blue sleeve • Taped version available for automatic insertion
|
Original
|
PDF
|
08-Apr-05
ASM 117
MAL2 085
vishay AXIAL ELECTROLYTIC capacitors
031-38229
03127101E3
031 AS
|
Untitled
Abstract: No abstract text available
Text: Si7904DN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
|
Original
|
PDF
|
Si7904DN
Si7904DN-T1-E3
Si7904DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si7216DN Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A) 0.032 at VGS = 10 V 6e 0.039 at VGS = 4.5 V 5e Qg (Typ.) 5.5 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si7216DN
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
|
Original
|
PDF
|
SUM90N08-7m6P
O-263
SUM90N08-7m6P-E3
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: Si7703EDN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.3 0.068 at VGS = - 2.5 V - 5.3 0.090 at VGS = - 1.8 V - 4.6 SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si7703EDN
Si7703EDN-T1-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si7901EDN Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.3 0.068 at VGS = - 2.5 V - 5.3 0.090 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available
|
Original
|
PDF
|
Si7901EDN
Si7901EDN-T1-E3
Si7901EDN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si7911DN Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 5.7 0.067 at VGS = - 2.5 V - 5.0 0.094 at VGS = - 1.8 V - 4.2 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
|
Original
|
PDF
|
Si7911DN
Si7911DN-T1-E3
Si7911DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si7904BDN
Si7904BDN-T1-E3
Si7904BDN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
|
|
Untitled
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
|
Original
|
PDF
|
SUD50N03-09P
O-252
SUD50N03-09P
SUD50N03-09P-E3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: Si7214DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.04 at VGS = 10 V 6.4 0.047 at VGS = 4.5 V 5.9 APPLICATIONS PowerPAK 1212-8 • Synchronous Rectification S1 3.30 mm • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si7214DN
Si7214DN-T1-E3
Si7214DN-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
|
Original
|
PDF
|
Si7922DN
Si7922DN-T1-E3
Si7922DN-T1-GE3
11-Mar-11
|
S-80735
Abstract: Si3456CDV
Text: SPICE Device Model Si3456CDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si3456CDV
18-Jul-08
S-80735
|
S-80748
Abstract: sup90n15 SUP90N15-18P
Text: SPICE Device Model SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
SUP90N15-18P
18-Jul-08
S-80748
sup90n15
SUP90N15-18P
|
PowerPAK 1212-8
Abstract: 3860
Text: Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK 1212-8 Dual 0.152 3.860 0.152 (3.860) 0.039 0.039 (0.990) (0.990) 0.068 0.068 (1.725) (1.725) 0.010 (0.255) 0.016 (0.405) 0.016 (0.405) 0.094 (2.390) 0.094 (2.390) 0.010 (0.225)
|
Original
|
PDF
|
14-Apr-08
PowerPAK 1212-8
3860
|
Untitled
Abstract: No abstract text available
Text: 4 TH IS D R AW IN G IS U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T BY 1TC0 2 3 ELECTRONICS P U B LIC A T IO N R IG H TS R E V I S I ON S GP RESERVED. C O R P O R A TIO N . 00 D E S C R IP T IO N N REVISED PER ECO- JDP CWR 14APR08 -00903 8 D
|
OCR Scan
|
PDF
|
14APR08
31MAR2000
|
311SM1068-H4
Abstract: No abstract text available
Text: FO- 5 5 1 11 -A HONEYWELL P A R T NUMBER .187 DIA X .125 WIDE OIL BRONZE ROLLER .005 FIM REV DOCUMENT 3 0038445 C H A N G E D BY SSK 14APR08 CHECK BLR "A" A .085 MAX P R E T RAVEL A B .5 60 + 0 60 A OPERATING / A P O S ITIO N L 1 •ÛBB+%* DIA HOLE / ¡ \
|
OCR Scan
|
PDF
|
14APR08
PR-14966
FORCE--40
5M-1982
311SM1068-H4
311SM1068-H4
|
AEG me 800
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 6 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL INTERNATIONAL RIGHTS RESERVED. LOC DIST GP 00 R E VIS IO N S LTR DESCRIPTION DWN APVD ECO -08-009038 14APR08 JDP CWR REVISED PER E C O - 0 9 - 0 2 1 51 0
|
OCR Scan
|
PDF
|
ECO-08-009038
ECO-09-021
14APR08
09SEP09
AEG me 800
|
SS94A2
Abstract: No abstract text available
Text: co ut I -'j- MICRO SWTTCH a Honeywell Division FED. MFG. CODE LINEAR OUTPUT HALL EFFECT TRANSDUCER CATALOG L I S T I NG THIS SS94A2 DRAWING HONEYWELL. P A RA ME TER S U P P L Y V OL T AG E S U P P L Y CURRENT OUTPUT CURRENT OUTPUT SPAN S E N S IT IV IT Y L I NEAR I T Y
|
OCR Scan
|
PDF
|
C072441
14APR08
19MAY08
SS94A2
150-J
SS94A2
|