MAR 732
Abstract: Si4900DY S-50392
Text: SPICE Device Model Si4900DY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4900DY
S-50392Rev.
14-Mar-05
MAR 732
S-50392
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6068C
Abstract: PQFP208 AT75C AT75C221 PA20 PA21 PA25 PA26 16 MHZ crystal oscillator
Text: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 40 MHz operation • 16-bit Fixed-point OakDSPCore® • • • • • • • • • • • – Up to 60 MHz operations – 104K bytes of Integrated Fast RAM, Codec Interface
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16-bit
32-Kbyte
32-bit
6068C
21-Sep-05
PQFP208
AT75C
AT75C221
PA20
PA21
PA25
PA26
16 MHZ crystal oscillator
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUU50N06-07L Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUU50N06-07L
18-Jul-08
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Si1419DH
Abstract: 73330
Text: SPICE Device Model Si1419DH Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1419DH
18-Jul-08
73330
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7332
Abstract: Si7148DP
Text: SPICE Device Model Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7148DP
18-Jul-08
7332
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Untitled
Abstract: No abstract text available
Text: KBP005G THRU KBP10G SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A FEATURE KBP Ideal for printed circuit board Surge overload rating:60 A peak High case dielectric strength MECHANICAL DATA Terminal: Plated leads solderable per
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KBP005G
KBP10G
UL-94
14-Mar-05
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SUD08P06-155L
Abstract: No abstract text available
Text: SPICE Device Model SUD08P06-155L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD08P06-155L
S-50415Rev.
14-Mar-05
SUD08P06-155L
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si1499dh
Abstract: No abstract text available
Text: Si1499DH New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID rDS(on) (W) (A)c 0.078 @ VGS = −4.5 V −1.6 0.095 @ VGS = −2.5 V −1.6 0.115 @ VGS = −1.8 V −1.6 0.153 @ VGS = −1.5 V −1.6 D TrenchFETr Power MOSFET: 1.5-V Rated
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Si1499DH
OT-363
SC-70
Si1499DH-T1--E3
S-50459--Rev.
14-Mar-05
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Untitled
Abstract: No abstract text available
Text: Si21102 Vishay Siliconix New Product 150-mA Ultra Low-Noise LDO Regulator With Error Flag and Discharge FEATURES D Output, Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3, 3.5, 3.6, 5.0-V Output Voltage Options
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Si21102
150-mA
Dropout--130
Noise--75
10-Hz
100-kHz
110-mA
300-mA
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mv silicon mp3 player
Abstract: No abstract text available
Text: SiP21101 Vishay Siliconix New Product 150-mA Ultra Low-Noise LDO Regulator With Discharge FEATURES D Output, Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3, 3.5, 3.6, 5.0-V Output Voltage Options D SC70-5 Package
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SiP21101
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
mv silicon mp3 player
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Si2306BDS
Abstract: 50395 SI2306 Si2306DS 73318
Text: SPICE Device Model Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2306BDS
to-10-V
S-50395Rev.
14-Mar-05
50395
SI2306
Si2306DS
73318
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p-channel 2.5v g-s mosfet
Abstract: S50411
Text: SPICE Device Model Si1403BDL Vishay Siliconix P-Channel 2.5V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1403BDL
S-50411Rev.
14-Mar-05
p-channel 2.5v g-s mosfet
S50411
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Si1411DH
Abstract: RthJA
Text: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance
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Si1411DH
SC-70
OT-363
SC-70
Si1411DH-T1--E3
18-Jul-08
RthJA
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p-channel mosfet
Abstract: 73330 Si1419DH S-50412
Text: SPICE Device Model Si1419DH Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1419DH
S-50412Rev.
14-Mar-05
p-channel mosfet
73330
S-50412
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si1403BDL Vishay Siliconix P-Channel 2.5V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1403BDL
18-Jul-08
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SI2312BDS
Abstract: 50396
Text: SPICE Device Model Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2312BDS
S-50396Rev.
14-Mar-05
50396
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Si1040X
Abstract: Si1040X-T1
Text: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.625 @ VIN = 4.5 V "0.43 0.890 @ VIN = 2.5 V "0.36 1.25 @ VIN = 1.8 V "0.3 D D D D D D TrenchFETr Power MOSFET Pb-free 1.8 to 8-V Input Available
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Si1040X
000-V
SC89-6
08-Apr-05
Si1040X-T1
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SUD08P06-155L
Abstract: No abstract text available
Text: SPICE Device Model SUD08P06-155L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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SUD08P06-155L
18-Jul-08
SUD08P06-155L
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Si7148DP
Abstract: si7148 7332
Text: SPICE Device Model Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7148DP
S-50456Rev.
14-Mar-05
si7148
7332
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7333-1
Abstract: 50413 Si5499DC 73331 A41219
Text: SPICE Device Model Si5499DC Vishay Siliconix P-Channel 8V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5499DC
18-Jul-08
7333-1
50413
73331
A41219
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Untitled
Abstract: No abstract text available
Text: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 40 MHz operation • 16-bit Fixed-point OakDSPCore® • • • • • • • • • • • • – Up to 60 MHz operations – 104K bytes of Integrated Fast RAM, Codec Interface
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16-bit
32-Kbyte
32-bit
6068B
09-Jun-05
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i20Z
Abstract: d1510
Text: CATALOG # 1C 1 1 SAFETY ORGANIZATIONS RELIABILITY SPECIFICATIDNS: — m — I APPCun STIRAffi TEM3ERATLRE; -40°C TD *85*C D63I-0174-Q5I KAW THIS FILTER HAS BEEN FEKMAllY RECOGNIZED. CERTIFIED IF APPROVED BY TIE LISTED AffiNCY. ThEREFtKE. ALL TEST/REIllIREteNTS SPECIFIED
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TKREF05E,
Attv40Â
50-bchz
d63i-0174-05I
14mar05
Q-l609025-5"
12SEP99
i20Z
d1510
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Untitled
Abstract: No abstract text available
Text: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D 14 9 . 8 6 14 7 . 3 2 14 4 . 7 8 14 2 . 2 4 13 9 . 7 0 1 37.1 6 13 4 . 6 2 13 2 . 0 8 12 9 . 5 4 12 7 . 0 0 12 4 . 4 6 1 21 .92
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14MAR05
14MAR05
MAR2000
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. 2 COPYRIGHT 19 RELEASED FOR PUBLICATION 6 5 ,19 BY AMP INCORPORATED. ALL RIGHTS RESERVED. D . 0 1 5 - [50 3 8 ] 61 941 s H fttj- ► .7185 [18.2501 .7185 [18.2501 R . 1 2 5 M I N[3 . 18] < [ ^ 1 . C) 0 0 [2 5 401 . 999
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RM1P8S-0000
RM1P8S-0301
007T9
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