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    15 A PNP POWER TRANSISTOR Search Results

    15 A PNP POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    15 A PNP POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40394

    Abstract: PNP Transistors MD14
    Text: 40394 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40394 VCEV 60 hFE 15 IC .15 Notes VCEO 40 hFE A .001 COB Polarity PNP ICEV Power Dissipation


    Original     		PDF 07-Sep-2010 40394 PNP Transistors MD14

    PNP Transistors

    Abstract: TO-205AD 40349
    Text: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation


    Original     		PDF O-205AD/TO-39 07-Sep-2010 PNP Transistors TO-205AD 40349

    BCP68

    Abstract: BCP69 BCP69-16 BCP69-25 SC-73
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP69 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2002 Nov 15 2003 Nov 25 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69


    Original     		PDF M3D087 BCP69 SCA75 R75/05/pp14 BCP68 BCP69 BCP69-16 BCP69-25 SC-73

    sanken power transistor 2SA1216

    Abstract: 2SC2922 SANKEN 2SC2922 sanken transistor sanken 2sc2922 Sanken 2SC2921 transistor 2sb1624 2sd2493 Sanken Transistor Mt 200 sanken 2sa1216 D01EC0 2sc2921 sanken
    Text: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693


    Original     		PDF 2SA1725 2SA1726 2SA1693 2SA1907 2SA1908 2SA1694 2SA1909 2SA1673 2SA1695 2SA1492 sanken power transistor 2SA1216 2SC2922 SANKEN 2SC2922 sanken transistor sanken 2sc2922 Sanken 2SC2921 transistor 2sb1624 2sd2493 Sanken Transistor Mt 200 sanken 2sa1216 D01EC0 2sc2921 sanken

    sanken power transistor 2SA1216

    Abstract: 2SC2922 sanken transistor 2SC2922 SANKEN 2sc3263 sanken 2SA1186 SANKEN Sanken Transistor Mt 200 2SD2494 sanken power transistor 2sa1295 D01EC0 2sc2837
    Text: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693


    Original     		PDF 2SA1725 2SA1726 2SA1693 2SA1907 2SA1908 2SA1694 2SA1909 2SA1673 2SA1695 2SA1492 sanken power transistor 2SA1216 2SC2922 sanken transistor 2SC2922 SANKEN 2sc3263 sanken 2SA1186 SANKEN Sanken Transistor Mt 200 2SD2494 sanken power transistor 2sa1295 D01EC0 2sc2837

    BCP68

    Abstract: BCP69 BCP69-16 BCP69-25 SC-73
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor Product specification Supersedes data of 1999 Apr 08 2002 Nov 15 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A


    Original     		PDF M3D087 BCP69 OT223 BCP68. MAM288 OT223) SCA74 613514/04/pp8 BCP68 BCP69 BCP69-16 BCP69-25 SC-73

    BDY90

    Abstract: BUW35 BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
    Text: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15


    Original     		PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C BDY90 BUW35 BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C

    BUW35

    Abstract: BDX85A BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
    Text: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15


    Original     		PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C BUW35 BDX85A BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C

    TIP36C

    Abstract: TIP36A TIP36C EQUIVALENT TIP36B
    Text: SILICON HIGH- POWER TRANSISTOR PNP TIP36A/B/C 25A 125W Technical Data …designed for use in general-purpose switching and power amplifier applications. F DC Current Gain - h FE = 15 Min @ IC = 15 Adc F 25 A Collecter Current F TO-218 Package MAXIMUM RATINGS


    Original     		PDF TIP36A/B/C O-218 TIP36A TIP36B TIP36C 15Adc 25Adc 10Vdc TIP36C TIP36A TIP36C EQUIVALENT TIP36B

    Untitled

    Abstract: No abstract text available
    Text: 2SA1898 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)3 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)250m @I(C) (A) (Test Condition)1.5


    Original     		PDF 2SA1898

    Untitled

    Abstract: No abstract text available
    Text: 2N5880 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)160# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15


    Original     		PDF 2N5880 time700n

    Untitled

    Abstract: No abstract text available
    Text: 2N2098 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N2098 Freq500M

    Untitled

    Abstract: No abstract text available
    Text: 2N1238 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)12 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m


    Original     		PDF 2N1238

    smd TRANSISTOR code marking 2007

    Abstract: SMD CODE PACKAGE SOT89 006aaa231 TRANSISTOR SMD CODE PACKAGE SOT89 2PB1424 2PD2150 SMD CODE PACKAGE SOT89-4 sot89 bv
    Text: 2PB1424 20 V, 3 A PNP low VCEsat BISS transistor Rev. 02 — 15 January 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF 2PB1424 SC-62/TO-243) 2PD2150. 2PB1424 smd TRANSISTOR code marking 2007 SMD CODE PACKAGE SOT89 006aaa231 TRANSISTOR SMD CODE PACKAGE SOT89 2PD2150 SMD CODE PACKAGE SOT89-4 sot89 bv

    Untitled

    Abstract: No abstract text available
    Text: 2N588 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)30m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)15 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N588

    Untitled

    Abstract: No abstract text available
    Text: 2N6469 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W)71# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15


    Original     		PDF 2N6469 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: 2N6489 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15


    Original     		PDF 2N6489

    Untitled

    Abstract: No abstract text available
    Text: 2N6491 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15


    Original     		PDF 2N6491

    D45VH4

    Abstract: D45VHI D45VH7 D45VH1 D45 TRANSISTOR D44VH D45VH D45VH10 D45VHI0
    Text: VERY HIGH SPEEED D45VH Series PNP POWER TRANSISTORS -30 - -80 VOLTS -15 AMP, 83 WATTS COMPLEMENTARY TO THE D44VH SERIES The D45VH is a PNP power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where


    OCR Scan     		PDF D44VH D45VH T0-220AB D45VH4 D45VHI D45VH7 D45VH1 D45 TRANSISTOR D45VH10 D45VHI0

    buw34

    Abstract: BUW35 2N6675 BU208A buw44 BDW52 bdx85 BU208 BUX80 2N6674
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP 2N6674 *C Pd (A) <W) MAX 15 2N6675 BVc b O BV c e o (V) MIN 175 350 (V) MIN 300 e ie hFE TYP (A) 8.0 (V) @,c fr *TYP (A) (MHZ) MAX MAX MIN v CE(SAT) MIN 20 . 5.0 15 15 15 175 450 400 8.0 20 . 5.0


    OCR Scan     		PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C buw34 BUW35 2N6675 BU208A buw44 bdx85 BU208 BUX80 2N6674

    BDW52

    Abstract: BDY90 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C BDW52A BDW52B
    Text: Power Transistors TO-3 Case Continued TYPE NO. *C (A) NPN PNP Pd (W) MAX BVc b O BV c e O @lc hFE *TYP v CE(SAT) @ lc *r *TYP (A) (A) (MHZ) (V) (V) MIN MIN MIN MAX 8.0 20 . 5.0 15 15 00 MIN MAX 2N6674 15 175 350 300 2N6675 15 175 450 400 8.0 20 . 5.0


    OCR Scan     		PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C BDY90 2N6674 2N6675

    BDW51

    Abstract: buw34 BUW35 BDW52 BDX86C BU208 BUX47 BUX80 2N6674 2N6675
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP •c Pd (A) <W) MAX e ie hFE TYP BV c b O BV c e O (V) (V) MIN MIN MIN MAX (A) VCE(SA T) @*c fr *TYP M MAX (A) (MHZ) MIN 2N6674 15 175 350 300 8.0 20 . 5.0 15 15 2N6675 15 175 450 400 8.0 20 . 5.0


    OCR Scan     		PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C buw34 BUW35 BDX86C BU208 BUX47 BUX80 2N6674 2N6675

    BSV15

    Abstract: BSV16
    Text: BSV15 BSV16 SILICON PLANAR PNP M E D IU M POWER A M P L IF IE R S The BSV 15 and BSV 16 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 metal case, intended fo r use in medium power general industrial applications. ABSOLUTE M A X IM U M R A TIN G S


    OCR Scan     		PDF BSV15 BSV16 --10V G-1666 BSV16

    lu387

    Abstract: No abstract text available
    Text: G E SOLID STATE DE | 01 Bfl7SDfll D ü m ia r - a 3- ^ 3 J" VERY HIGH SPEED D45VH Series PNP POWER TRANSISTORS -30 •-80 VOLTS -15 AMP, 83 WATTS .COMPLEMENTARY TO THE D44VH SERIES The D45VH is a PNP power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where


    OCR Scan     		PDF D45VH D44VH lu387