RBV-406M
Abstract: AM01Z EM01Z FMM-22S FMM-32S RBV-401 RBV-402 RBV-4102 RBV-602 SFPM-52
Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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RBV-406M
RBV-406M
AM01Z
EM01Z
FMM-22S
FMM-32S
RBV-401
RBV-402
RBV-4102
RBV-602
SFPM-52
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AM01Z
Abstract: RBV402
Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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AM01Z
Abstract: EM01Z FMM-22S FMM-32S RBV-402 RBV-406H RBV-4102 RBV-602 SFPM-52 SFPM-62
Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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RBV-606H
AM01Z
EM01Z
FMM-22S
FMM-32S
RBV-402
RBV-406H
RBV-4102
RBV-602
SFPM-52
SFPM-62
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RBV-402
Abstract: RO2Z FMM-22S RBV-602 AM01Z EM01Z FMM-32S RBV-4102 SFPM-52 SFPM-62
Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Ta (°C) 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150 0.97
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SFPM-52
EM01Z
RBV-402
RO2Z
FMM-22S
RBV-602
AM01Z
EM01Z
FMM-32S
RBV-4102
SFPM-52
SFPM-62
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ATS 2501
Abstract: RM3C RBV-602 AM01Z EM01Z FMM-22S FMM-32S RBV-402 RBV-4102 SFPM-52
Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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10zrl
Abstract: No abstract text available
Text: General-purpose Diodes Rectifier Diodes • Surface-mount Type Absolute Maximum Ratings Part No. VRM V 1.0 1.0 10 –40 to +150 0.98 1.0 10 30 –40 to +150 1.0 1.0 10 45 –40 to +150 0.98 1.0 10 I FSM (A) 0.9 30 –40 to +150 SFPM-62 1.0 45 SFPM-54 0.9
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SFPM-62
SFPM-54
SFPM-64
SFPM-52
10zrl
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RM1Z 12
Abstract: rm 4z RM1 A 45 RBV-602 AM01Z EM01Z FMM-22S FMM-32S FMM-32 RBV-4102
Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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EM01Z
Abstract: FMM-22S FMM-32S RBV-402 RBV-4102 RBV-602 SFPM-52 SFPM-62 AM01 AM01Z
Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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Untitled
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number 400 600 VF (V) max 25 30 25 -40 to +150 -40 to +150 -40 to +150 0.98 0.98 0.98 IR IR(H) (µA) (mA) VR=VRM VR=VRM
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SPX-G32S
SPX-62S
RBV-60
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Untitled
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number 400 600 VF (V) max 25 30 25 -40 to +150 -40 to +150 -40 to +150 0.98 0.98 0.98 IR IR(H) (µA) (mA) VR=VRM VR=VRM
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SPX-G32S
SPX-62S
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Untitled
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number Tstg (°C) VF (V) max 25 30 25 -40 to +150 -40 to +150 -40 to +150 0.98 0.98 0.98 IR(H) IR (mA) (µA) VR=VRM VR=VRM
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SPX-G32S
SPX-62S
RBV-60
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SJPL-H2
Abstract: 220F AL01Z EL02Z MPL-102S MPL-1036S SPX-62S SPX-G32S
Text: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number Tstg (°C) VF (V) max 25 30 25 -40 to +150 -40 to +150 -40 to +150 0.98 0.98 0.98 IR(H) IR (mA) (µA) VR=VRM VR=VRM
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SPX-G32S
SPX-62S
RBV-60
SJPL-H2
220F
AL01Z
EL02Z
MPL-102S
MPL-1036S
SPX-62S
SPX-G32S
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SJPX-H6
Abstract: SJPL-H2 FML-4202S SJPX-F2 fml4202s 220F AL01Z EL02Z MPL-102S 4203s
Text: 4-3 Ultrafast Recovery Diodes ●Surface-Mount VRM V 200 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number Tstg (°C) VF (V) max 25 30 25 -40 to +150 -40 to +150 -40 to +150 0.98 0.98 0.98 IR(H) IR (mA) (µA) VR=VRM VR=VRM
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SPX-G32S
SPX-62S
SZ-10)
SJPX-H6
SJPL-H2
FML-4202S
SJPX-F2
fml4202s
220F
AL01Z
EL02Z
MPL-102S
4203s
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UX-F5B
Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Text: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100
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O-220F
RZ1030
RZ1040
RZ1055
RZ1065
RZ1100
RZ1125
RZ1150
UX-F5B
UX-F5B diode
RG-2A Diode
shv-30j
FMQ2FU
axial package
fmp2fur
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Untitled
Abstract: No abstract text available
Text: ESD Diodes MAZLxxxH Series Silicon planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 (0.95) 5 • Four elements anode-common type • Power dissipation PD : 200 mW 2 1 Unit PD 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150
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SC-74A
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FMXG12
Abstract: FMX4202S fmng12 FML4202S FMXA2202S sjpl-d2 FMXA-2202S FMX-4202S SJPX-F2 FMXS-4202
Text: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 trrq
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SPX-G32S
SPX-62S
O-220F2Pin
FMXG12
FMX4202S
fmng12
FML4202S
FMXA2202S
sjpl-d2
FMXA-2202S
FMX-4202S
SJPX-F2
FMXS-4202
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Untitled
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 IR(H)
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SPX-G32S
SPX-62S
O-220F2Pin
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Untitled
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes ●Surface-Mount 1.0 1.5 2.0 Surface-Mount SJP Surface-Mount (SJP) Surface-Mount (SJP) SJPL-D2 SJPX-F2 3.0 3.0 Surface-Mount (SJP) Surface-Mount (D pack) SJPL-L2 SPX-G32S SPX-62S 60 80 -40 to +150 -40 to +150 0.98 0.98 IR(H)
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SPX-G32S
SPX-62S
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RN4Z
Abstract: No abstract text available
Text: Characteristic Curves Rectifier Diodes SFPM-5 series 0.6 0.4 0.1 Ta = 150°C 100°C 60°C 25°C 0.01 t 1.6 P.C.B. Solder Land = 3.0 35µmCu 25 50 75 100 125 Ambient Temperature Ta °C 150 0.001 0.3 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 30 25 20ms 20
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AG01Y
Abstract: EG01Y ru1p1
Text: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V R RM R RM (A) max max t rr IF / I FP (mA) 2 (ns) IF / I FP (mA) Rth (j- ) Mass Fig. (°C/W) (g) No. 1.0 25 –40 to +150 1.2 1.0 100 0.5 100 100 100/100 50 100/200 22 0.13 1.0 30 –40 to +150 1.2 1.0 100 0.5
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100mA/100mA
100mA/200mA
AG01Y
AG01Y
EG01Y
ru1p1
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1N148 diode
Abstract: 1n148 LT1056CS8 LF351 Op Amp IC LT1056 AD547 LM329 1N4148 2N3906 LT1022
Text: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTIO FEATURES • ■ ■ ■ The LT 1055/LT1056 JFET input operational amplifiers combine precision specifications with high speed performance. Guaranteed Offset Voltage: 150µV Max
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LT1055/LT1056
1055/LT1056
150pA
500pA
254mm)
LT1122
340ns
14MHz,
LT1792
10556fb
1N148 diode
1n148
LT1056CS8
LF351 Op Amp IC
LT1056
AD547
LM329
1N4148
2N3906
LT1022
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LF155A
Abstract: No abstract text available
Text: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTIO FEATURES • ■ ■ ■ ■ The LT 1055/LT1056 JFET input operational amplifiers combine precision specifications with high speed performance. Guaranteed Offset Voltage: 150µV Max
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LT1055/LT1056
1055/LT1056
150pA
500pA
LT1122
340ns
14MHz,
LT1792
10556fc
LF155A
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Untitled
Abstract: No abstract text available
Text: 5 IE ì> m 013bb71 D Ü D 3 4 S 3 62G « S E K SEMIKRDN S E M I K R O N INC Vdrm V rrm tq Tvj = 125 °C V US G Itrms (maximum values for continuous operation) 350 A | 350 A (sin. 180; Tease = 76 °C; 50 Hz) 150 A 150 A Ita v 800 15 20 SKFT 150/08 DS —
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013bb71
500Hz
fll3bb71
SKFT150
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Untitled
Abstract: No abstract text available
Text: + / - 107. RANGE¡-55 TG R0£5C=3ÛOO NTL: = - 3 . 5 '/ . / OPERATING GTGRAGE GHMG C G35C RANGE : - 6 5 ^THERMAL TIMG * n I G C I P A T I GN POWER TG 150 150 c GNG T A NT :8 G G G GC C G N G T A N T : G mWP C RATING 125WPP5 MA X MIN P., D E R A T E t e s t e d per- M I G - F : - G 3 b 4 8
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/-10X
RANGEi-65
133W333
MIP-P-33P48
IN3HE33'
13TUF:
DRIP-P-33P48
GT0P05T-303P
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