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    150 WATT HF TRANSISTOR 12 VOLT Search Results

    150 WATT HF TRANSISTOR 12 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    150 WATT HF TRANSISTOR 12 VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:


    Original     		PDF NTE236 27MHz, O220AB NTE236 O220AB 27MHz

    300 watt hf transistor 12 volt

    Abstract: arco 467 sd1405 150 watt hf transistor 12 volt arco 465 60WP 100 watt hf transistor 12 volt arco 463
    Text: SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS COMMON EMITTER IMD −32 dB GOLD METALLIZATION P OUT = 75 W MIN. WITH 13 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1405 BRANDING SD1405 PIN CONNECTION DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1405 SD1405 300 watt hf transistor 12 volt arco 467 150 watt hf transistor 12 volt arco 465 60WP 100 watt hf transistor 12 volt arco 463

    erf7530

    Abstract: 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR
    Text: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value. TO-218 PACKAGE OUTLINE & MARKINGS


    Original     		PDF ERF7530 30MHz ERF7530 O-218 30MHz 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR

    BROADBAND TRANSFORMERS AND POWER

    Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403
    Text: Order this document by AN878/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN878 VHF MOS POWER APPLICATIONS Prepared by: Roy Hejhall Sr. Staff Engineer INTRODUCTION The assumption is made that the reader is familiar with the types, construction, and electrical characteristics of


    Original     		PDF AN878/D AN878 BROADBAND TRANSFORMERS AND POWER erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403

    WRC100

    Abstract: D-60322 WRC-10 H15-Steckerleiste 0024WRC0100 wrc10 EN50140
    Text: MTM Power Messtechnik Mellenbach GmbH • Fürstenbergerstr. 143 · D-60322 Frankfurt/Main · Tel.: +49- 0 69-15426 0 · Fax: +49-(0)69-15426 10 · www.mtm-power.com · info@mtm-power.com WRC100 DC/DC-Wandler 100 Watt DC/DC Converter 100 Watts Weitbereichseingang


    Original     		PDF D-60322 WRC100 WRC100 WRC-10 H15-Steckerleiste 0024WRC0100 wrc10 EN50140

    mosfet HF amplifier

    Abstract: 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet SD2923 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier
    Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure


    Original     		PDF AN1256 SD2923, SD2923 mosfet HF amplifier 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier

    200 watt hf mosfet

    Abstract: AN1256 SD2921-10 SD2923 HF Amplifier 300w STMicroelectronics FABRICATION SITE
    Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure


    Original     		PDF AN1256 SD2923, SD2923 200 watt hf mosfet AN1256 SD2921-10 HF Amplifier 300w STMicroelectronics FABRICATION SITE

    500w power amplifier circuit diagram

    Abstract: HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 200w power amplifier PCB layout 500 watt mosfet power amplifier circuit diagram 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1
    Text: APPLICATION NOTE APT9501 By: Kenneth Dierberger Bobby McDonald Lee B. Max A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier Presented at RF EXPO WEST 1995 1 A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier Kenneth Dierberger Applications Engineering Manager


    Original     		PDF APT9501 400Watt, 56MHz 100VDC F-33700 500w power amplifier circuit diagram HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 200w power amplifier PCB layout 500 watt mosfet power amplifier circuit diagram 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1

    MCP1702 MC

    Abstract: 1702 5002e 1702 3302e AN765 AN792 MCP1702 20000 watts power amplifier circuit diagrams MCP1702-5002 A1 marking code sot-89
    Text: MCP1702 250 mA Low Quiescent Current LDO Regulator Features Description • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified


    Original     		PDF MCP1702 MCP1702 DS22008B-page MCP1702 MC 1702 5002e 1702 3302e AN765 AN792 20000 watts power amplifier circuit diagrams MCP1702-5002 A1 marking code sot-89

    150 watt hf transistor 12 volt

    Abstract: MIL-STD-1311
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF429 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics —


    OCR Scan     		PDF MRF429 MRF429 150 watt hf transistor 12 volt MIL-STD-1311

    transistor SG 14

    Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
    Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the


    OCR Scan     		PDF TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR

    MRF426

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP


    OCR Scan     		PDF MRF426 MRF426

    150 watt hf transistor 12 volt

    Abstract: ferroxcube wideband hf choke
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor . . designed for 24 Volt UHF large-signal, common base amplifier applications in industrial and com m ercial FM equipment operating in the range of 8 5 0 -9 6 0 MHz. • Motorola Advanced Amplifier Concept Package


    OCR Scan     		PDF Tac0-960 MRF898 150 watt hf transistor 12 volt ferroxcube wideband hf choke

    MPS-L51

    Abstract: transistor BF 2030
    Text: MPS-L51 SILICON HIGH VOLTAGE PNP SILICON ANNULAR TRANSISTOR . . . designed for general-purpose, high-voltage amplifier applications. • PNP SILICON AMPLIFIER TRANSISTOR High Breakdown Voltages B V c E O = 100 Vdc (Min), B V c b O “ 100 Vdc (Min) • Low Saturation Voltage


    OCR Scan     		PDF MPS-L51 MPS-L51 transistor BF 2030

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50 D esigner’s Data Sheet POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor T h e B U H 5 0 has an a p p lic a tio n s p e c ific s t a t e - o f- a r t d ie d e s ig n e d fo r use in


    OCR Scan     		PDF BUH50/D BUH50 21A-06 O-220AB

    transistor B 722

    Abstract: JE 720 transistor JE720 MJE720 MJE721 JE722 BD165 equivalent 500 WATT MJE712 MJE722
    Text: MJE720 silicon MJE721 MJE722 NPN SILICON MEDIUM POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in low-power amplifiers, as drivers in high-power amplifier and medium*speed switching circuits. 40, 60, 80 VOLTS 20 WATTS DC Current Gain h f e = 40 {Min} @ lc = 150 m Adc


    OCR Scan     		PDF MJE720 MJE721 MJE722 MJE710, MJE711, MJE712 BD165, 8D167, BD169 MJE720 transistor B 722 JE 720 transistor JE720 JE722 BD165 equivalent 500 WATT MJE722

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .


    OCR Scan     		PDF BUD44D2 St254 MTP8P10 500nH

    ECG944

    Abstract: external voltage regulator 120 volt input 24 volt philips 170c ECG116 ECG94 ECG946 audio oscillator
    Text: PHILIPS E C G INC 17E • bbS3iafl 0004355 b T—58—11—13 ECG@ Semiconductors ECG946 POSITIVE VOLTAGE REGULATOR — - l.252>, 31.60 M AX r Electronic "S h u t-D o w n " Control and Short-Circuit Protection Excellent lo a d Regulation(Low O utput Impedance • 20m illiohm s


    OCR Scan     		PDF 0G04365 ECG946 20milliohms 100kHil ECG946 ECG944 external voltage regulator 120 volt input 24 volt philips 170c ECG116 ECG94 audio oscillator

    ECG946

    Abstract: ECG944
    Text: PHILIPS E C G INC ECG@ Semiconductors 17E 0 • T—58—11—13 ECG946 POSITIVE VOLTAGE REGULATOR -l.252" 3l.80 M A Xr Electronic "Shut-Down" Control and Short-Circuit Protection Excellent load Regulation(LowOutput Impedance • 20milliohms typ from dc to 100 kHz)


    OCR Scan     		PDF ECG946 T--58--11--13 ECG946 20milliohms ECG944

    2N2222A motorola

    Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
    Text: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc


    OCR Scan     		PDF 2N2219 2N2222 2N2218A 2N2219A 2N2222A 2N2222A motorola equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola

    100 watt hf mosfet 12 volt

    Abstract: transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810
    Text: Aft.MOU w an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N -C hannel E n h an c em e n t M ode Device HF to VHF A pplications 40 W atts CW C o m m o n Source Push-Pull C on fig u ratio n DMOS S tru c tu re


    OCR Scan     		PDF DU2840V 10C13C15 100 watt hf mosfet 12 volt transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810

    motorola bipolar transistor

    Abstract: MOTOROLA TRANSISTOR BUD42D
    Text: MOTOROLA Order this document by BUD42D/0 SEMICONDUCTOR TECHNICAL DATA BUD42D Designer’s Data Sheet High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Hetwork and a Transient Voltage Suppression Capability POWER TRANSISTORS 4 AMPERES


    OCR Scan     		PDF BUD42D/0 BUD42D BUD42D BUD42D: 69A-13 motorola bipolar transistor MOTOROLA TRANSISTOR

    transistor 936

    Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100
    Text: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization


    OCR Scan     		PDF DU2840V 5b422D5 C7C9C12C14 C10C13C15 5b4BE05 transistor 936 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Dual Picoampere Input Current Bipolar Op Amp AD706 FEATURES CONNECTION DIAGRAM HIGH DC PRECISION 50 nV max Offset Voltage 0.6 n V /°C max Offset Drift 110 pA max Input Bias Current Plastic Mini-DIP N Cerdip (Q) and Plastic SOIC (R) Packages


    OCR Scan     		PDF AD706 EIA-481A AD705, AD704