PLUS247
Abstract: 013009 IXTK8N150L
Text: Preliminary Technical Information IXTK8N150L IXTX8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 = 1500V = 8A Ω < 3.6Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA TO-264(IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTK8N150L
IXTX8N150L
O-264
PLUS247
8N15L
100ms
013009
IXTK8N150L
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTK8N150L IXTX8N150L = 1500V = 8A Ω < 3.6Ω RDS on N-Channel Enhancement Mode Guaranteed FBSOA TO-264(IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTK8N150L
IXTX8N150L
O-264
PLUS247
8N15L
100ms
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IXTH2N150L
Abstract: IXTH2N150
Text: Advance Technical Information LinearTM Power MOSFET w/Extended FBSOA IXTH2N150L VDSS ID25 = 1500V = 2A 15 RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C
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IXTH2N150L
O-247
100ms
2N150L
IXTH2N150L
IXTH2N150
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTK8N150L IXTX8N150L VDSS ID25 = 1500V = 8A Ω = 5.0Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-264(IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1500
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IXTK8N150L
IXTX8N150L
O-264
PLUS247
338B2
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SOT-227B Outline
Abstract: Vdss 1500V IXTN8N150L
Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN8N150L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1500V = 8A Ω = 5.0Ω RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C
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IXTN8N150L
OT-227
E153432
338B2
SOT-227B Outline
Vdss 1500V
IXTN8N150L
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IXTN8N150L
Abstract: No abstract text available
Text: IXTN8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A ≤ 3.6Ω Ω G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR
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IXTN8N150L
OT-227
E153432
8N15L
100ms
6-13-A
IXTN8N150L
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IXTN8N150L
Abstract: No abstract text available
Text: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTN8N150L D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω RDS on G S S miniBLOC, SOT-227 B E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTN8N150L
OT-227
E153432
8N15L
100ms
IXTN8N150L
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ixtn8n150l
Abstract: 013009 ixtn8n
Text: Preliminary Technical Information IXTN8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTN8N150L
OT-227
E153432
8N15L
100ms
ixtn8n150l
013009
ixtn8n
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DG306AE25
Abstract: DG306AE
Text: DG306AE25 DG306AE25 Gate Turn-off Thyristor DS4099-5 January 2014 LN31739 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V 225A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies
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DG306AE25
DS4099-5
LN31739)
000V/Â
DG306AE25
DG306AE
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DG306AE
Abstract: TGS 2600 100A 1000V thyristor DG306AE25 CS 20A TGS 800 300a 1000v thyristor
Text: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V IT AV 225A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)
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DG306AE25
DS4089
DS4099-4
DG306AE
TGS 2600
100A 1000V thyristor
DG306AE25
CS 20A
TGS 800
300a 1000v thyristor
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Untitled
Abstract: No abstract text available
Text: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V IT AV 225A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)
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DG306AE25
DS4089
DS4099-4
000V/Â
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TGS 2600
Abstract: DG306AE25 300a 1000v thyristor
Text: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V IT AV 225A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)
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DG306AE25
DS4089
DS4099-4
TGS 2600
DG306AE25
300a 1000v thyristor
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Untitled
Abstract: No abstract text available
Text: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS ITCM 600A VDRM 2500V IT AV 225A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)
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DG306AE25
DS4089
DS4099-4
000V/Â
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TGS 2600 series
Abstract: 300a 1500v thyristor 300a 1000v thyristor TGS 2600 AN4506 AN4839 DG306AE25
Text: DG306AE25 DG306AE25 Gate Turn-off Thyristor Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000 APPLICATIONS KEY PARAMETERS 600A ITCM VDRM 2500V 225A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC)
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DG306AE25
DS4089
DS4099-4
TGS 2600 series
300a 1500v thyristor
300a 1000v thyristor
TGS 2600
AN4506
AN4839
DG306AE25
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Gate Turn-off 100A 750V
Abstract: DG646BH25 300a 1500v thyristor
Text: DG646BH25 DG646BH25 Gate Turn-off Thyristor Replaces March 1998 version, DS4092-2.3 DS4092-3.0 January 2000 APPLICATIONS KEY PARAMETERS 2000A ITCM VDRM 2500V IT AV 867A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)
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DG646BH25
DS4092-2
DS4092-3
Gate Turn-off 100A 750V
DG646BH25
300a 1500v thyristor
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Gate Turn-off 100A 750V
Abstract: DG646BH25
Text: DG646BH25 DG646BH25 Gate Turn-off Thyristor Replaces March 1998 version, DS4092-2.3 DS4092-3.0 January 2000 APPLICATIONS KEY PARAMETERS 2000A ITCM VDRM 2500V IT AV 867A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)
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DG646BH25
DS4092-2
DS4092-3
Gate Turn-off 100A 750V
DG646BH25
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GTO 100A 750V
Abstract: DG646BH25 Gate Turn-off 100A 750V AN4506 AN4839
Text: DG646BH25 DG646BH25 Gate Turn-off Thyristor Replaces March 1998 version, DS4092-2.3 DS4092-3.0 January 2000 APPLICATIONS KEY PARAMETERS 2000A ITCM VDRM 2500V 867A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC)
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DG646BH25
DS4092-2
DS4092-3
GTO 100A 750V
DG646BH25
Gate Turn-off 100A 750V
AN4506
AN4839
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Intelligent Power Module
Abstract: 1200 HVIPM PM1200HCE330-1 pm1200hce
Text: MITSUBISHI HVIPM PM1200HCE330-1 HIGH POWER SWITCHING USE INSULATED TYPE HVIPM High Voltage Intelligent Power Module PM1200HCE330-1 ● IC . 1200A ● VCES . 3300V
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PM1200HCE330-1
10K/kW
20K/kW
Intelligent Power Module
1200 HVIPM
PM1200HCE330-1
pm1200hce
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2sc 1091
Abstract: No abstract text available
Text: ANALOG DEVICES □ FEATURES Functionally Complete Precision Conditioner High Accuracy Low Input Offset Tempco: ±0.1|iV/°C Low Nonlinearity: ±0.025% High CMR: 160dB 60Hz, G=1000V/V High CMV Isolation: 1500V rms Continuous 240V rms Input Protection Small Package: 1.0"x2.rx0.35” DIP
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160dB
000V/V)
AC1226
2sc 1091
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4-20mA to 2-10v ic
Abstract: No abstract text available
Text: Complete Signal Conditioning I/O Subsystem □ A N A LO G D E V IC E S 3B Series FEATURES/BENEFITS Low Cost, Completely Integrated 16-Channel Modular Signal Conditioning Subsystem Wide Selection of Functionally Complete Input and Output Plug-In Modules Rugged Industrial Chassis, Rack or Surface Mounted
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16-Channel
4-20mA/0-20mA
4-to-20mA
0-to-20mA
400MHz
4-20mA to 2-10v ic
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resistance to Current Converter 0-20mA
Abstract: AD591 850il 4-20mA- 0-5 volt converter Voltage to Current Converter 0-20mA 3B13 AD592 3B14 220V AC to 5V DC transformer Voltage to Current Converter dual 4-20mA
Text: 3B Series I/O Subsystems I_ I Input Module Selection Input Type/Span Voltage Output Current Output Nonisolated Modules Isolated Modules dc, ± lOmV, ± 50m V , ± lOOmV ±10V 4-20mA/0-20mA 3B10 3B30 dc, ± IV , ± 5V + 10V 4-20mA/0-20mA 3B10 3B31
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4-20mA/0-20mA
4-20mA,
0-20mA
resistance to Current Converter 0-20mA
AD591
850il
4-20mA- 0-5 volt converter
Voltage to Current Converter 0-20mA
3B13
AD592
3B14
220V AC to 5V DC transformer
Voltage to Current Converter dual 4-20mA
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y S i S E M I C O N D U C T O R S DS4092-2.2 DG646BH25 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 2000A 2500V 867A •t AV dVj/dt 1000V/HS 300A/|iS d lp /d t ■ Variable speed A.C. motor drive inverters (VSD-AC). ■tcm V DRM ■ Uninterruptable Power Supplies
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DS4092-2
DG646BH25
000V/HS
Environm46BH25
37bfi522
37bfl522
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QA700
Abstract: QA-700 gate turn-off L20C
Text: GATE TURN-OFF THYRISTOR SG500JX22 TENTATIVE DATA CHOPPER, INVERTER APPLICATION Unit in mm . Repetitive Peak Off-State Voltage : V d r M=6000V . R.M.S On-State Current 2 - 0 3.6 ± 0 .2 1OMAX : Tt RMS =200A . Peak Turn-Off Current : It GQM=500A . Critical Rate of Rise ofOn-State
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SG500JX22
QA700
QA-700
gate turn-off
L20C
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power supply circuit diagram that convert 240v to 5v
Abstract: signal conditioning circuit 4-20 mA DCP5B39
Text: DCP5B SERIES Compact, Low Cost Modular Signal Conditioners Designed for Laboratory and Industrial Applications Introduction The DCP5B Series represents an innovative generation of low cost, high performance plug-in signal conditioners. Designed for laboratory and in
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DCPPB01
DCPXRK-002
DCPPB03
DCPPB04
DCPXPRT-003
DCPXPRE-003
ACAB-22/LN
PP801)
ACA8-22
power supply circuit diagram that convert 240v to 5v
signal conditioning circuit 4-20 mA
DCP5B39
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