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    onsemi NCP177BMX150TCG

    IC REG LINEAR 1.5V 500MA 4XDFN
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    DigiKey NCP177BMX150TCG Reel 5,000 5,000
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    NCP177BMX150TCG Digi-Reel 5,000 1
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    NCP177BMX150TCG Cut Tape 5,000 1
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    Mouser Electronics NCP177BMX150TCG 2,726
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    Newark NCP177BMX150TCG Reel 5,000
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    Rochester Electronics NCP177BMX150TCG 15,000 1
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    TME NCP177BMX150TCG 1
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    Flip Electronics NCP177BMX150TCG 154,043
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    onsemi NCP130AMX150TCG

    IC REG LINEAR 1.5V 300MA 6XDFN
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    DigiKey NCP130AMX150TCG Digi-Reel 5,000 1
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    NCP130AMX150TCG Cut Tape 5,000 1
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    NCP130AMX150TCG Reel 5,000 5,000
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    NCP130AMX150TCG Reel 17 Weeks 5,000
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    Mouser Electronics NCP130AMX150TCG 2,999
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    Newark NCP130AMX150TCG Reel 5,000
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    Rochester Electronics NCP130AMX150TCG 159,000 1
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    TME NCP130AMX150TCG 1
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    Flip Electronics NCP130AMX150TCG 5,544
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    onsemi NCV8170BMX150TCG

    IC REG LINEAR 1.5V 150MA 4XDFN
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    DigiKey NCV8170BMX150TCG Digi-Reel 5,000 1
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    NCV8170BMX150TCG Cut Tape 5,000 1
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    NCV8170BMX150TCG Reel 5,000 5,000
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    Mouser Electronics NCV8170BMX150TCG 2,999
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    onsemi NCP170AMX150TCG

    IC REG LINEAR 1.5V 150MA 4XDFN
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    DigiKey NCP170AMX150TCG Digi-Reel 4,244 1
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    NCP170AMX150TCG Cut Tape 4,244 1
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    Mouser Electronics NCP170AMX150TCG 240
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    Newark NCP170AMX150TCG Reel 5,000
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    Rochester Electronics NCP170AMX150TCG 189,000 1
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    TME NCP170AMX150TCG 1
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    Avnet Silica NCP170AMX150TCG 20 Weeks 5,000
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    Wuhan P&S NCP170AMX150TCG 6,650 1
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    onsemi NCP170BMX150TCG

    IC REG LINEAR 1.5V 150MA 4XDFN
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    DigiKey NCP170BMX150TCG Cut Tape 4,098 1
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    NCP170BMX150TCG Digi-Reel 4,098 1
    • 1 $0.79
    • 10 $0.472
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    Avnet Americas NCP170BMX150TCG Reel 19 Weeks 10,000
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    Mouser Electronics NCP170BMX150TCG 1,885
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    Newark NCP170BMX150TCG Reel 5,000
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    150TC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MR16R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.


    Original
    MR16R0824 MR16R082C 8Mx16 K4R271669A-NCK8/NCK7/NCG6) PDF

    Untitled

    Abstract: No abstract text available
    Text: FPM21500QFN FPM21500QF N Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM21500QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process


    Original
    FPM21500QFN FPM21500QF FPM21500QFN 900MHz 85GHz) FPM21500QFNPCK FPM21500QFNSQ DS100630 PDF

    Untitled

    Abstract: No abstract text available
    Text: Surface Mounting Device y b V T & ' f Schottky Barrier Diode # — F y - o m WÆ Twin Diode OUTLINE DIMENSIONS DF40SC3L Case : STO-220 10.2 = 02 n , 30V 40A Type No. ta tte r 2.4 ±0-a 40SC3L •SM D • T j 150TC Ü r n • Ê V f = 0 .4 5 V # P 0 .1 ±fil


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    DF40SC3L STO-220 40SC3L 150TC D00330D 00033D1 PDF

    BC212C

    Abstract: Transistor BC212 BC212
    Text: M C C X 1 TO-92 P lastic-E n cap su late T ran sisto rs BC212,B,C TRANSISTOR PNP FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e


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    BC212 150TC BC212B BC212C 100MHz Transistor BC212 PDF

    SG20SC6M

    Abstract: XW marking 251 3j diode marking aj tw-104
    Text: Schottky Barrier Diode Twin Diode • fttg H SG20SC6M Package OUTLINE ' Unit • mm FTO-220G W eight 1.54g Typ 60V 20A 4.5 Feature • Tj=150TC Tj=150°C • 7 J IÆ -J U K Full Molded High lo Rating-Small-RKG M ain Use • D C /D C Switching Regulator DC/DC Converter


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    SG20SC6M FTO-220G CJ533-1 XW marking 251 3j diode marking aj tw-104 PDF

    Diode LT 410

    Abstract: S30SC4MT
    Text: Schottky Barrier Diode Twin Diode m ftm m S30SC4MT o u t lin e Unit: mm Weight 5.2k Typ Package : MTO-3PT 40V 30A Feature • Ti=150TC Tj=150°C • 9 jcö V J'Ö TU Small 8 jc High lo Rating Main Use Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation


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    S30SC4MT CJ533-1 Diode LT 410 PDF

    DIODE BY

    Abstract: TI251
    Text: G S150TA 25120 G S 150TC 25120 G S 150TI25120 Gallium Arsenide Schottky Rectifier I dc Isolated Surface Mount Package Type Part Number GS150 TI25120 Triple Independent 2 » } 250 GS150 TC25120 Triple Common cathode 250 250 GS150 TA25120 Triple Common anode


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    GS150TA25120 GS150TI25120 GS150TC25120 GS150 TI25120 TC25120 TA25120 DIODE BY TI251 PDF

    SHINDENGEN DIODE

    Abstract: No abstract text available
    Text: f f iH ü x '/W x y 3 y h V7 Surface Mounting Device ^ —K Schottky Barrier Diode Single Diode IW B tfä c E l D2FS6 OUTLINE DIMENSIONS Case : 2F o-w 60V 1.5A i} J ° ® hV 5» •/JvffiSM D • T j 150TC •PnnsM T l ^ y - y x U U I 1 • SR®S •D C /D C U V A - ?


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    150TC SHINDENGEN DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 3 7 h V T Ç ' Ï J ï - Y Schottky Barrier Diode *# s! Single Diode W Ë •Wfê-tfâEI D5S9M OUTLINE DIMENSIONS C a se : ITO-220 90V 5A • T j 150TC •P rrsm TA '^ V v iS S E • ^ J I/ E - J L / K m & • SRBS 9 D C / D C Z \y ){- 5 ’ • m a . < f-h . o A if t s


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    ITO-220 150TC GDD32D4 BE11387 PDF

    Untitled

    Abstract: No abstract text available
    Text: v a -y K yom Schottky Barrier Diode Twin Diode M$W vh'ÆH OUTLINE DIMENSIONS SF10SC4R 4 0 V 10A • T j 150TC • P rrsm SI •» S B Œ 2 K V S IŒ •S R g à • D C /D C Z IV A '-Î? y - A . 0A«Ë§ • a n , K -5 > v > \;w m • Æ tëH RATINGS •ÎÈ fc liS ^ ïE lfë


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    SF10SC4R 150TC PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Axial Diode mtm D2S4M OUTLINE Unit: mm Weight 0.38g Typ Package I AX078 30 40V 2A 8 3. Feature • PRRSM^y^ VÍ/X<SÍ¡E • D C /D C 3 • * Œ .y -A .O A * itg * <R0 H (D * Main Use • • • • • 7 27.5 5 27.5 • Tj=150°C


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    AX078 150TC J533-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM 48824 LM48824 Class G Headphone Amplifier with I 2 C Volume Control T exa s In s t r u m e n t s Literature Number: SNAS479C B O O m r A udio Pow er A m p lifie r Series C la ss G Headphone Am plifier with I General Description 2C Volum e Control


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    LM48824 SNAS479C LM48824 PDF

    circuit of rowa television

    Abstract: toshiba b54
    Text: TOSHIBA TH M R2E2Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2E2Z is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 2 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.


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    432-WORD 18-BIT 18-bit TC59RM818MB B2M-wordX18 32M-wordX 600MHz 32M-word 711MHz circuit of rowa television toshiba b54 PDF

    MIG toshiba

    Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
    Text: TOSHIBA THMR1E16-6/-7/-8 TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E16 is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB and 8 TC59M718RB Direct Rambus DRAMs on a printed circuit board.


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    THMR1E16-6/-7/-8 128M-word 600MHz 711MHz 800MHz 16cydes) -16CSP MIG toshiba ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.


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    108f864-WORD 18-BIT 864-word 18-bit TC59RM818MB 64M-word 64M-wordXl8 600MHz 711MHz PDF

    toshiba a75

    Abstract: ejdalf
    Text: TOSHIBA THMR1E8-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108.864-WORD BY 18-BIT 128M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E8 is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB Direct Rambus DRAMs on a printed circuit board.


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    864-WORD 18-BIT 18-bit TC59RM718MB 64M-wordXl8 600MHz 16cycles) 711MHz toshiba a75 ejdalf PDF

    IR3M02A

    Abstract: 1R3M02 IR3M02 ir3m02an IR3M02N IR9494 S-25 rsS85
    Text: - 25 5 “ IR3M02,IR3M02N,IR3M02A,IR3M02AN x-f — t 'f t W t E 1S& • * * ; & v f y j ' ' *8*11 5 . « l6 W I ' — F ee C ± I R 9 4 9 4 C f f i A * B # e i ! e f / P E S jh [a ]i& F m K jr r 4 - # in U fc fc < D X -* S . I R 3 M 0 2 / N i I R 3 M 0 2 A / A N ( i H f » * * t l « 0 8 t t Ä ‘' S i : 2> .


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    IR3M02 IR3M02N IR3M02A IR3M02AN IR3M02/N IR3M02A/ANIÂ 200mA IR3M02, IR3M02A) IR3M02N, 1R3M02 IR9494 S-25 rsS85 PDF

    uPC71D

    Abstract: PC71D uPC71 sS2000 RA710 150TC PC71
    Text: - 22 - fi P C 7 1 2 i TJ V '* U - * -e, m W j A t f , S /v S O l/X v ^ r - y F f f i t J ¿ ^ : o - C T T L te ¿ 'c o i^ jlg f e ill llis t f à — T ío 0 •T y 7 ¿ ^ ñ ^ J C Í i / í A 710 ¿ S ^ n T t Ë T * ^ ^ . T . = 2 5 0 24V V¡-c/? ± 7 V Fd + 5V


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    150TC uPC71D PC71D uPC71D PC71D uPC71 sS2000 RA710 150TC PC71 PDF

    AD834

    Abstract: AD834G
    Text: AD834 5 0 0 M H z 4 ê tm r i- □ m f f i S t r y j >r-=s H v fflO 4 S K T t n / t f ä T , •í-'n c M L T 500MHz * x ? > h ? y X ' 3 y ^ > y x Ä * S 4 r t - t : i ' • e j* IW » (± X = Y = ± l V i O ¿ S , t Í I B / J ± 4 i n A i ; í : 5 J ; - 5 h ' J í y / S t i


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    AD834 500MHz ommWtl---280mWtyp 500mW AD834G) AD834S/883B) 150TC -60sec AD834G PDF

    TL496

    Abstract: TL499A
    Text: - 242 - T L 4 9 9 A '> 'J — * / T L 4 9 6 C ie ítA á p t I T ' \s * "f i i ä t l t y m * * £ H T î T * o î 7 5 ', 'J — X / X - f -y f - y / ' æ »?a^ < D a-c c ë t i n ? '* > . . t H t » * Œ I± 2 . 9 V A>Eb 3 0 V < D « S H T - t t . * lc jg S E B lllÉ - C * S .


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    TL499A TL496 E-100mA 150-1000Q 500mApeak TaS70Â 446mW 10sec S70-C TL496 TL499A PDF

    AD834

    Abstract: AD834G AD834J AD834S
    Text: AD834 m 500MHz 4 êtm ri- □ f f i S t r y j > r-= s H v f f l O 4 S K T t n / t f ä T , •í-'n c M L T 500MHz * x ? > h ? y X ' 3 y ^ > y x Ä * S 4 r t - t : i ' • e j* IW » (± X = Y = ± l V i O ¿ S , t Í I B / J ± 4 i n A i ; í : 5 J ; - 5 h ' J í y / S t i


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    AD834 500MHz ommWtl---280mWtyp 500mW AD834G) AD834S/883B) 150TC -60sec AD834G AD834J AD834S PDF

    Untitled

    Abstract: No abstract text available
    Text: SENELAB LTD 37E » DEC 3 i 1987 Ö1331Ö7 OÜGDlGä O • SMLB SEMELAB BDS10 BDS11 B DS12 NEW PRODUCT ^ SILICON NPN EPITAXIAL BASE TO 220 METAL MECHANICAL DATA Dimensions in mm 10-60 FEATURES rjf • HERMETIC TO 220 METAL PACKAGE it • HIGH RELIABILTY • ISOLATED OPTION


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    BDS10 BDS11 220-ISO BDS12 150Tcas PDF

    r770

    Abstract: MAX752 MAX752M 1254
    Text: - 358- MAX752 x t ï y • 7 7y • X CM os yí > • u i ' a u - í? i l l tu* maxim f j t € - K C ^ H 'X tSiU iSW sS; ( P W M ) 0 X t ■ y T ' - T - ^ - X -f ■ iB M E E Ii 2 H O Ä F + , L X to GND 1 .8 V « _ tO A * Œ 4 :1 5 V * T ; J ; 1 B V ' S Œ C « t


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    MAX752 200mAOW MAX732/733C 167-f 727mW( 762mW 150-c 175TC M/AX752C/E 125mA r770 MAX752M 1254 PDF