Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance Low Vf silicon carbide Schottky barrier diode included in parallel with body diode
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SPM1007
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ic 5056 mv 85
Abstract: GA150TS60U
Text: PD -5.056 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA150TS60U
ic 5056 mv 85
GA150TS60U
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LM 1709
Abstract: GA150TD120U DT12-6
Text: PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200 V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA150TD120U
10kHz
LM 1709
GA150TD120U
DT12-6
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Untitled
Abstract: No abstract text available
Text: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT150DL60B2
O-247
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150a 400v diode bridge
Abstract: 6075A
Text: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT150DL60B2
O-247
150a 400v diode bridge
6075A
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RG2 DIODE
Abstract: GA150TD120U DT12-6
Text: PD - 5.067A PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA150TD120U
10kHz
RG2 DIODE
GA150TD120U
DT12-6
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ge 142
Abstract: lta 301 GA150TS60U
Text: PD - 50056D GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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50056D
GA150TS60U
ge 142
lta 301
GA150TS60U
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tc 317 c
Abstract: 056B GA150TS60U
Text: PD -5.056B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA150TS60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA150TS60U
tc 317 c
056B
GA150TS60U
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GA150TS60U
Abstract: No abstract text available
Text: PD -50056C GA150TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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-50056C
GA150TS60U
GA150TS60U
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Untitled
Abstract: No abstract text available
Text: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT150DL60B2
O-247
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GA75TS60U
Abstract: No abstract text available
Text: PD -5050 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA75TS60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA75TS60U
GA75TS60U
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SCR bridge 600V "power module"
Abstract: 150a 400v diode bridge SCR Inverter datasheet scr characteristics G150SPBK06P3H VR14 Zener Diodes 300v Bridge diodes G150SPBK06P3
Text: PD-97398 HiRel TM INT-A-Pak 3, PLASTIC FULL-BRIDGE IGBT MODULE G150SPBK06P3H Product Summary Part Number VCE IC G150SPBK06P3H 600V 150A VCE SAT 2.3V Typ. 2.6V Max. HiRelTM INT-A-Pak 3 The HiRelTM INT-A-Pak series are isolated near hermetic power modules which combine the latest
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PD-97398
G150SPBK06P3H
MIL-PRF-38534
SCR bridge 600V "power module"
150a 400v diode bridge
SCR Inverter datasheet
scr characteristics
G150SPBK06P3H
VR14
Zener Diodes 300v
Bridge diodes
G150SPBK06P3
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Untitled
Abstract: No abstract text available
Text: PD-97398 HiRel TM INT-A-Pak 3, PLASTIC FULL-BRIDGE IGBT MODULE G150SPBK06P3H Product Summary Part Number VCE IC G150SPBK06P3H 600V 150A VCE SAT 2.3V Typ. 2.6V Max. HiRelTM INT-A-Pak 3 The HiRelTM INT-A-Pak series are isolated near hermetic power modules which combine the latest
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PD-97398
G150SPBK06P3H
MIL-PRF-38534
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PBMB150B12
Abstract: No abstract text available
Text: IGBT MODULE PBMB150B12 H-Bridge 150A 1200V CIRCUIT OUTLINE DRAWING ３ １ ４ 14 ５ 13 ２ ９ ７ 11 ６ 12 8- fasten- tab No 110 Dimension mm Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC
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PBMB150B12
PBMB150B12
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Untitled
Abstract: No abstract text available
Text: APT75DL60B G APT75DL60S(G) 600V 75A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT75DL60B
APT75DL60S
O-247
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High-Rel Discrete Semiconductors
Abstract: fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Text: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech’s Strategy in Discrete Products is to supply devices, either in axial, surface-mount or custom assembly configurations, that are rugged in design and in packages that are both hermetic and varied
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1N5415
1N5420
1N5550
1N5554
SCSFF05,
SCSFF10,
SCSFF15
SCSM05,
PDAcatalog2010
High-Rel Discrete Semiconductors
fast recovery diode 1000v 10A
fast recovery diode 400v 5A
fast recovery diode 600v 5A
IN4954
150a 400v diode bridge
diode 50v 5A
3-Phase Full-Wave Bridge Rectifier
Zener Diode Glass 50v
DIODE RECTIFIER BRIDGE SINGLE 55a 600v
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet I27239 12/06 GA75TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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I27239
GA75TS120UPbF
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Untitled
Abstract: No abstract text available
Text: In te rn a tio n a l I«R Rectifier PD -5 .056A PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK G A 150T S 6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V q e s — 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRF 860
Abstract: 5056B IRF 150a
Text: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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150TS6
IRF 860
5056B
IRF 150a
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z
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GA150TD120U
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IQR 336
Abstract: 5056B IOR 336
Text: International IQR Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.056B GA150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode
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8-40kHz
200kHz
GA150TS60U
A150TS60U
IQR 336
5056B
IOR 336
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C82 diode
Abstract: C81 diode
Text: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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10kHz
GA150TD120U
150TD
C82 diode
C81 diode
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GA150TS60U
Abstract: 150TS60U
Text: International 3BSR Rectifi6r preliminary "HALF-BRIDGE" IGBT INT-A-PAK PD'5056 G A 150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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150TS60U
GA150TS60U
150TS60U
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Untitled
Abstract: No abstract text available
Text: International IÔR Recti fi 6 f PD -5.05 6B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK G A 150T S 6 0 U Ultra-Fast Speed IGBT Features • G en eratio n 4 IG BT tech nology V c e s = 600 V • U ltraFast: O ptim ize d for high operating fre q u e n cie s 8 -4 0 kH z In hard sw itching, >200
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