rur150
Abstract: RUR150100 RURU150100 RURU15070 RURU15080 RURU15090
Text: RURU15070, RURU15080, RURU15090, RURU150100 150A, 700V - 1000V Ultrafast Diodes January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <125ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . .
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RURU15070,
RURU15080,
RURU15090,
RURU150100
125ns
O-218
175oC
RURU15080
RURU15090
rur150
RUR150100
RURU150100
RURU15070
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RURU150100
Abstract: RURU15070 RURU15080 RURU15090
Text: RURU15070, RURU15080, RURU15090, RURU150100 150A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <125ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . .
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RURU15070,
RURU15080,
RURU15090,
RURU150100
125ns
O-218
175oC
RURU15080
RURU15090
RURU150100
RURU15070
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Untitled
Abstract: No abstract text available
Text: Preliminary SGR20N40L / SGU20N40L FEATURES N-CHANNEL IGBT D-PAK I-PAK * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics VCES Rating Units Collector-Emitter Voltage
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SGR20N40L
SGU20N40L
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RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU150120
RURU150120
200ns)
200ns
175oC
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TA09925
Abstract: RURU15060
Text: RURU15060 Data Sheet January 2002 150A, 600V Ultrafast Diode Features The RURU15060 is an ultrafast diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU15060
RURU15060
175oC
TA09925
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ka s15
Abstract: 150a gto DO-205AC do-30
Text: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I2063/A SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 150A
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I2063/A
SD153N/R
DO-30
DO-205AC
DO-30)
-20UNF-2A*
ka s15
150a gto
DO-205AC
do-30
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RURU15060
Abstract: No abstract text available
Text: RURU15060 Data Sheet January 2000 File Number 3201.3 150A, 600V Ultrafast Diode Features The RURU15060 is an ultrafast diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU15060
RURU15060
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RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU150120
RURU150120
200ns)
200ns
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RHRU15060
Abstract: No abstract text available
Text: RHRU15060 Data Sheet January 2002 150A, 600V Hyperfast Diode Features The RHRU15060 is a hyperfast diode with soft recovery characteristics trr < 60ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRU15060
RHRU15060
175oC
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RHR150100
Abstract: RHRU150100 RHRU15090
Text: RHRU15090, RHRU150100 January 2002 150A, 900V - 1000V Hyperfast Diodes Features RHRU15090 and RHRU150100 TA49072 are hyperfast diodes with soft recovery characteristics (tRR < 90ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRU15090,
RHRU150100
RHRU15090
TA49072)
RHR150100
RHRU150100
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RHR150120
Abstract: RHRU150120 RHR1501
Text: RHRU150120 Data Sheet January 2002 150A, 1200V Hyperfast Diode Features The RHRU150120 is a hyperfast diode with soft recovery characteristics trr < 100ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRU150120
RHRU150120
100ns)
100ns
175oC
RHR150120
RHR1501
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Untitled
Abstract: No abstract text available
Text: Bulletin I2063 rev. B 09/06 SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features 150A High power FAST recovery diode series 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics
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I2063
SD153N/R
DO-30
SD153N/R
000V/
D153N/
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FS300R12KE3
Abstract: FS450R12KE3 FS225R12KE3 ECONOPACK eupec FS450R12KE3 FS150R12KE3 205G1 FS300R17KF6C FS450R12KE3 EUPEC FS300R1
Text: Econopack+ Product Range Ic 1200V IGBT3 1700V Loss Loss 6 x 150A FS150R12KE3* FS150R17KF6C 6 x 225A FS225R12KE3 FS225R17KF6C 6 x 300A FS300R12KE3 FS300R17KF6C 6 x 450A FS450R12KE3 - * on request only EconoPACK+ + + + 0,8 C5 C3 G5 G3 E5 20.5±1 17±0.5 G1 V
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FS150R12KE3*
FS150R17KF6C
FS225R12KE3
FS225R17KF6C
FS300R12KE3
FS300R17KF6C
FS450R12KE3
73/140/190mm
130mm.
FS300R12KE3
FS450R12KE3
FS225R12KE3
ECONOPACK
eupec FS450R12KE3
FS150R12KE3
205G1
FS300R17KF6C
FS450R12KE3 EUPEC
FS300R1
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I2063
Abstract: 150a gto ka s15 DO-205AC
Text: Bulletin I2063 rev. A 09/94 SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 150A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics
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I2063
SD153N/R
DO-30
SD153N/R
SD153N/R.
150a gto
ka s15
DO-205AC
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Untitled
Abstract: No abstract text available
Text: FGR15N40 Strobe Flash N-Channel Logic Level IGBT Features General Description VCE SAT = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have
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FGR15N40
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RHRU15060
Abstract: No abstract text available
Text: RHRU15060 Data Sheet Title HR 506 bt 0A, 0V pert ode utho eyrds 0A, 0V pert ode, errpoon, pert odes vache ergy ted, itch wer pes, wer itch January 2000 File Number 3089.3 150A, 600V Hyperfast Diode Features The RHRU15060 is a hyperfast diode with soft recovery
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RHRU15060
RHRU15060
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15N40A
Abstract: FGW15N40A
Text: FGW15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description VCE SAT = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have
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FGW15N40A
FGW15N40A
15N40A
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Untitled
Abstract: No abstract text available
Text: FGW15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description VCE SAT = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have
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FGW15N40A
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FGR15N40A
Abstract: 15N40A OC73
Text: FGR15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description VCE SAT = 4.4V at IC =150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have
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FGR15N40A
200et
FGR15N40A
15N40A
OC73
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RHR150100
Abstract: RHRU150100 RHRU15090
Text: RHRU15090, RHRU150100 April 1995 Title HR 509 HRU 010 bt 0A, 0V 00V pert odes File Number 150A, 900V - 1000V Hyperfast Diodes Features RHRU15090 and RHRU150100 TA49072 are hyperfast diodes with soft recovery characteristics (tRR < 90ns). They have half the recovery time of ultrafast diodes and are silicon
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RHRU15090,
RHRU150100
RHRU15090
TA49072)
RHR150100
RHRU150100
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rhr150120
Abstract: RHRU150120
Text: RHRU150120 Data Sheet Title HR 501 bt 0A, 00V pert ode utho rpoon, pert al odes vache ergy ted, itch wer pes, wer File Number 4049.1 150A, 1200V Hyperfast Diode Features The RHRU150120 is a hyperfast diode with soft recovery characteristics trr < 100ns). It has half the recovery time of
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RHRU150120
RHRU150120
100ns)
100ns
rhr150120
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DGT409BCA
Abstract: TGS 2600 current source inverter TGS 800 GTO thyristor GTO thyristor 3000V 800A gto Gate Drive circuit 150a gto Gate Turn-Off Thyristors GTO thyristor Application notes
Text: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter
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DGT409BCA
DS4414-4
LN25790)
DGT409BCA
TGS 2600
current source inverter
TGS 800
GTO thyristor
GTO thyristor 3000V 800A
gto Gate Drive circuit
150a gto
Gate Turn-Off Thyristors
GTO thyristor Application notes
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RG30H
Abstract: No abstract text available
Text: Preliminary SGR20N40L / SGU20N40L N-CHANNEL IGBT FEATURES * High Input Impedance * High Peak Current Capability 150A * Easy Gate Drive APPLICATIONS *Strobe Flash ABSOLUTE MAXIMUM RATINGS Symbol Characteristics V Collector-Emitter Voltage qes Rating Units
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SGR20N40L
SGU20N40L
RG30H
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RGK20
Abstract: SG400EX11
Text: GATE TURN-OFF THYRISTOR SG4Q0 R,U,W,EX 11 CHOPPER, INVERTER APPLICATION Unit in mm . Repetitive Peak Off-State Voltage : VdRM=1 300,1600,1800,2500V . R.M.S On-State Current : IT ( R M S )=150A . Peak Turn-Off Current : It g OM= 400A . Critical Rate of Rise of On-State Current
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00A/ps
G400FX11
00fr9S
SG400
RGK20
SG400EX11
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