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    150A GTO 2000 V Search Results

    150A GTO 2000 V Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    ND9BCB150A Amphenol Communications Solutions ix Industrial, Input output connectors, Cable, ix to ix, Type B, 0.5m, Gold Flash, 26AWG 8 Wire Cable, PVC, Cat 6A Visit Amphenol Communications Solutions
    ND9ACB150A Amphenol Communications Solutions ix Industrial Cable, IX to IX, Type A, 0.5m, 26AWG 8 Wire ix Industrial Cable, PVC, Cat 6A, Gold Flash Visit Amphenol Communications Solutions

    150A GTO 2000 V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TGS 2600

    Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
    Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse


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    DGT409BCA DS4414-4 DGT409 TGS 2600 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive PDF

    RURU150120

    Abstract: No abstract text available
    Text: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial


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    RURU150120 RURU150120 200ns) 200ns PDF

    RURU150120

    Abstract: No abstract text available
    Text: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


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    RURU150120 RURU150120 200ns) 200ns 175oC PDF

    00365 r

    Abstract: eupec T 271 N 150a gto
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 271 S 45 T 2 center holes ∅ 3,5 x 4,0 C A SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 271 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values


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    150a gto

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 901 S 35.45 T ø 100 max. A C 2 center holes ∅ 3.5 x 1.8 SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 901 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values


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    150a gto

    Abstract: fast 1000V 1000A
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage


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    200w dc to ac inverter Circuit diagram

    Abstract: diagram UPS 200w FM2G150US60
    Text: IGBT FM2G150US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is


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    FM2G150US60 200w dc to ac inverter Circuit diagram diagram UPS 200w FM2G150US60 PDF

    150a gto

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage


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    150a gto

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage


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    Untitled

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company Marketing Information D 801 S 45 T ø75 C A ø77 max. 48-0.1 2 center holes ∅ 3.5 x 1.8 SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T Elektrische Eigenschaften / Electrical properties


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    Untitled

    Abstract: No abstract text available
    Text: KSC5603D KSC5603D High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Internal schematic diagram C 2 (1) B 1 E (3)


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    KSC5603D O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =1.9V @ IC = 75A • High Input Impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for


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    FGH75N60UF 100oC PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH75N60SF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =2.3V @ IC = 75A • High Input Impedance Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for


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    FGH75N60SF 100oC FGH75N60SF PDF

    FM2G300US60

    Abstract: No abstract text available
    Text: IGBT FM2G300US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is


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    FM2G300US60 FM2G300US60 PDF

    Untitled

    Abstract: No abstract text available
    Text: FGY75N60SMD 600 V, 75 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications


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    FGY75N60SMD O-247D03) PDF

    Untitled

    Abstract: No abstract text available
    Text: FGY75N60SMD 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat = 1.9V @ IC = 75A Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar


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    FGY75N60SMD Power-247 PDF

    GTO 6500V

    Abstract: No abstract text available
    Text: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The D G T409 BCA is a sym m etrical GTO designed for applications w hich specifically require a reverse blocking capability, such as current source inverters CSI . R everse


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    DGT409BC A6565 DS4414-2 DS4414-3 000V/jiS GTO 6500V PDF

    FMG2G75US60

    Abstract: No abstract text available
    Text: IGBT FMG2G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMG2G75US60 E209204 FMG2G75US60 PDF

    FMBH1G75US60

    Abstract: No abstract text available
    Text: IGBT FMBH1G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMBH1G75US60 E209204 FMBH1G75US60 PDF

    FMBL1G300US60

    Abstract: No abstract text available
    Text: IGBT FMBL1G300US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMBL1G300US60 E209204 FMBL1G300US60 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT FMG1G75US60L Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMG1G75US60L E209204 PDF

    FGH75N60UFTU

    Abstract: fgh75n60
    Text: FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low


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    FGH75N60UF FGH75N60UF FGH75N60UFTU fgh75n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Inte rn at io nal rectifier " 73 dF|4ü554se o o o t ,s 7 i 3 |~ r ~ 2 .5 - / ? Data Sheet No. PD-3.086 INTERNATIONAL RECTIFIER ISO PFT SERBES OQOA It GGI Gate Türn-Off Hockey Puk SCRs Major Ratings and Characteristics — • tgq 150PFT200 150PFT250 800


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    554se 150PFT200 150PFT250 150PFT PDF

    I2063

    Abstract: 150a gto ka s15 DO-205AC
    Text: Bulletin I2063 rev. A 09/94 SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 150A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics


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    I2063 SD153N/R DO-30 SD153N/R SD153N/R. 150a gto ka s15 DO-205AC PDF