TGS 2600
Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse
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DGT409BCA
DS4414-4
DGT409
TGS 2600
150a gto
TGS 2600 series
TGS 800
GTO thyristor 3000V 800A
GTO 6500V
AN4506
DGT409BCA
DGT409BCA6565
gto Gate Drive
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RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU150120
RURU150120
200ns)
200ns
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RURU150120
Abstract: No abstract text available
Text: RURU150120 Data Sheet January 2002 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURU150120
RURU150120
200ns)
200ns
175oC
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00365 r
Abstract: eupec T 271 N 150a gto
Text: European PowerSemiconductor and Electronics Company Marketing Information D 271 S 45 T 2 center holes ∅ 3,5 x 4,0 C A SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 271 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values
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150a gto
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information D 901 S 35.45 T ø 100 max. A C 2 center holes ∅ 3.5 x 1.8 SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 901 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values
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150a gto
Abstract: fast 1000V 1000A
Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage
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200w dc to ac inverter Circuit diagram
Abstract: diagram UPS 200w FM2G150US60
Text: IGBT FM2G150US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is
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FM2G150US60
200w dc to ac inverter Circuit diagram
diagram UPS 200w
FM2G150US60
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150a gto
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage
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150a gto
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information D 801 S 45 T ø75 C A ø77 max. 48-0.1 2 center holes ∅ 3.5 x 1.8 SZ M /26.06.97 Schnelle Gleichrichterdiode Fast Diode D 801 S 45 T Elektrische Eigenschaften / Electrical properties
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Untitled
Abstract: No abstract text available
Text: KSC5603D KSC5603D High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Internal schematic diagram C 2 (1) B 1 E (3)
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KSC5603D
O-220
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Untitled
Abstract: No abstract text available
Text: FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =1.9V @ IC = 75A • High Input Impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for
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FGH75N60UF
100oC
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Untitled
Abstract: No abstract text available
Text: FGH75N60SF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =2.3V @ IC = 75A • High Input Impedance Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
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FGH75N60SF
100oC
FGH75N60SF
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FM2G300US60
Abstract: No abstract text available
Text: IGBT FM2G300US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is
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FM2G300US60
FM2G300US60
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Untitled
Abstract: No abstract text available
Text: FGY75N60SMD 600 V, 75 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications
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FGY75N60SMD
O-247D03)
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Untitled
Abstract: No abstract text available
Text: FGY75N60SMD 600V, 75A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat = 1.9V @ IC = 75A Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar
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FGY75N60SMD
Power-247
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GTO 6500V
Abstract: No abstract text available
Text: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The D G T409 BCA is a sym m etrical GTO designed for applications w hich specifically require a reverse blocking capability, such as current source inverters CSI . R everse
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DGT409BC
A6565
DS4414-2
DS4414-3
000V/jiS
GTO 6500V
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FMG2G75US60
Abstract: No abstract text available
Text: IGBT FMG2G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMG2G75US60
E209204
FMG2G75US60
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FMBH1G75US60
Abstract: No abstract text available
Text: IGBT FMBH1G75US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMBH1G75US60
E209204
FMBH1G75US60
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FMBL1G300US60
Abstract: No abstract text available
Text: IGBT FMBL1G300US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMBL1G300US60
E209204
FMBL1G300US60
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Untitled
Abstract: No abstract text available
Text: IGBT FMG1G75US60L Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMG1G75US60L
E209204
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FGH75N60UFTU
Abstract: fgh75n60
Text: FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low
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FGH75N60UF
FGH75N60UF
FGH75N60UFTU
fgh75n60
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Untitled
Abstract: No abstract text available
Text: Inte rn at io nal rectifier " 73 dF|4ü554se o o o t ,s 7 i 3 |~ r ~ 2 .5 - / ? Data Sheet No. PD-3.086 INTERNATIONAL RECTIFIER ISO PFT SERBES OQOA It GGI Gate Türn-Off Hockey Puk SCRs Major Ratings and Characteristics — • tgq 150PFT200 150PFT250 800
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554se
150PFT200
150PFT250
150PFT
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I2063
Abstract: 150a gto ka s15 DO-205AC
Text: Bulletin I2063 rev. A 09/94 SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 150A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics
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I2063
SD153N/R
DO-30
SD153N/R
SD153N/R.
150a gto
ka s15
DO-205AC
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