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    150N15 Search Results

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    150N15 Price and Stock

    Littelfuse Inc IXTH150N15X4

    MOSFET N-CH 150V 150A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH150N15X4 Tube 385 1
    • 1 $11.68
    • 10 $11.68
    • 100 $9.459
    • 1000 $8.06792
    • 10000 $7.40024
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    Newark IXTH150N15X4 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.22
    • 10000 $7.22
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    Littelfuse Inc IXTK150N15P

    MOSFET N-CH 150V 150A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTK150N15P Tube 305 1
    • 1 $12.7
    • 10 $12.7
    • 100 $9.6724
    • 1000 $8.04019
    • 10000 $8.04019
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    Newark IXTK150N15P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.84
    • 10000 $7.84
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    Littelfuse Inc IXTP150N15X4

    MOSFET N-CH 150V 150A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP150N15X4 Tube 300 50
    • 1 -
    • 10 -
    • 100 $6.2889
    • 1000 $5.549
    • 10000 $4.99409
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    Newark IXTP150N15X4 Bulk 23 1
    • 1 $4.31
    • 10 $4.31
    • 100 $4.31
    • 1000 $4.31
    • 10000 $4.31
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    Littelfuse Inc IXTA150N15X4

    MOSFET N-CH 150V 150A TO263AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA150N15X4 Tube 181 1
    • 1 $10.48
    • 10 $10.48
    • 100 $7.8168
    • 1000 $7.8168
    • 10000 $7.8168
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    Newark IXTA150N15X4 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.2
    • 10000 $8.2
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    Littelfuse Inc IXTQ150N15P

    MOSFET N-CH 150V 150A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ150N15P Tube 179 1
    • 1 $8.13
    • 10 $8.13
    • 100 $6.81167
    • 1000 $6.81167
    • 10000 $6.81167
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    Newark IXTQ150N15P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.14
    • 10000 $7.14
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    Find more 150N15 price and stock on Findchips.com

    150N15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    150N15

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 150N15

    Tf 227

    Abstract: No abstract text available
    Text: IXFN 150N15 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 150 150 V V VGS VGSM


    Original     		PDF 150N15 OT-227 Tf 227

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFR 150N15 VDSS = 150 HiPerFETTM Power MOSFETs ISOPLUS247TM V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 150N15 247TM

    150N15

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFK 150N15 IXFX 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150


    Original     		PDF O-264 150N15 150N15

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHTTM HiPerFET Power MOSFET IXFH 150N15P IXFK 150N15P VDSS = 150 V ID25 = 150 A Ω RDS on ≤ 13 mΩ N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 150N15P O-247

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET IXFH 150N15P IXFK 150N15P Power MOSFET VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 150N15P O-247

    150N15P

    Abstract: 150n15 IXTQ150N15P 2709V
    Text: PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 150N15P O-264 150N15P 150n15 IXTQ150N15P 2709V

    150N15

    Abstract: No abstract text available
    Text: IXFK 150N15 IXFX 150N15 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150


    Original     		PDF O-264 150N15 150N15

    150N15

    Abstract: fast IXFX
    Text: HiPerFETTM Power MOSFETs IXFK 150N15 IXFX 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150


    Original     		PDF 150N15 150N15 fast IXFX

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 150N15 247TM E153432

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 150N15P O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 150 150 V V ±20 ±30


    Original     		PDF 150N15 OT-227

    150N15

    Abstract: E 150N10 150N10 9100pF
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V ±20


    Original     		PDF 150N15 OT-227 E153432 150N15 E 150N10 150N10 9100pF

    IXTQ150N15P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 150N15P IXTK 150N15P VDSS = 150 V ID25 = 150 A Ω RDS on ≤ 13 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 150N15P IXTQ150N15P

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V VGS VGSM


    Original     		PDF 150N15 OT-227 E153432

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q