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    150N15P Search Results

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    150N15P Price and Stock

    Littelfuse Inc IXTK150N15P

    MOSFET N-CH 150V 150A TO264
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    DigiKey IXTK150N15P Tube 305 1
    • 1 $12.71
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    Newark IXTK150N15P Bulk 300
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    Littelfuse Inc IXTQ150N15P

    MOSFET N-CH 150V 150A TO3P
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    DigiKey IXTQ150N15P Tube 169 1
    • 1 $8.26
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    • 100 $6.81167
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    Newark IXTQ150N15P Bulk 300
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    Littelfuse Inc IXFH150N15P

    MOSFET N-CH 150V 150A TO247AD
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    DigiKey IXFH150N15P Tube 132 1
    • 1 $12.23
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    • 100 $7.83167
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    Newark IXFH150N15P Bulk 300
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    RS IXFH150N15P Bulk 8 Weeks 30
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    IXYS Corporation IXFK150N15P

    MOSFET N-CH 150V 150A TO264AA
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    DigiKey IXFK150N15P Box 25
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    IXYS Corporation IXFH150N15P

    MOSFETs 170 Amps 150V 0.013 Rds
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    Mouser Electronics IXFH150N15P 300
    • 1 $12.11
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    TTI IXFH150N15P Tube 300
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    TME IXFH150N15P 1
    • 1 $11.21
    • 10 $8.92
    • 100 $8.31
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    New Advantage Corporation IXFH150N15P 24 1
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    Find more 150N15P price and stock on Findchips.com

    150N15P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHTTM HiPerFET Power MOSFET IXFH 150N15P IXFK 150N15P VDSS = 150 V ID25 = 150 A Ω RDS on ≤ 13 mΩ N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 150N15P O-247

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET IXFH 150N15P IXFK 150N15P Power MOSFET VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 150N15P O-247

    150N15P

    Abstract: 150n15 IXTQ150N15P 2709V
    Text: PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 150N15P O-264 150N15P 150n15 IXTQ150N15P 2709V

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 150N15P O-264

    IXTQ150N15P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 150N15P IXTK 150N15P VDSS = 150 V ID25 = 150 A Ω RDS on ≤ 13 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 150N15P IXTQ150N15P

    IXFH 150N15P

    Abstract: 150n15 150N15P 2709V
    Text: PolarHTTM HiPerFET IXFH 150N15P IXFK 150N15P Power MOSFET VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 150N15P O-247 IXFH 150N15P 150n15 150N15P 2709V

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP