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    Ampleon BLF8G24LS-150VJ

    RF MOSFET LDMOS 28V CDFM6
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    DigiKey BLF8G24LS-150VJ Reel
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    Flip Electronics BLF8G24LS-150VJ 83
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    Ampleon BLF8G27LS-150VJ

    RF MOSFET LDMOS 28V CDFM6
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    Rochester Electronics BLF8G27LS-150VJ 480 1
    • 1 $72.29
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    Flip Electronics BLF8G27LS-150VJ 171
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    Ampleon BLF9G24LS-150VJ

    Power LDMOS Transistor N-Channel 6-Pin CDFM T/R - Tape and Reel (Alt: BLF9G24LS-150VJ)
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    Avnet Americas BLF9G24LS-150VJ Reel 100
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    150VJ Datasheets Context Search

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    MTF110

    Abstract: 2SK2131
    Text: M O S ïï ^ I ^ kÔ ^ / ^ - M O S F E T M O S Field E ffect P o w e r T ra n s is to r 2SK2131 N 5L ' \ ' T W l ' / \ 0,7 - M O S * < FET T 2 S K 2 1 3 1 t i N 5 L+ ? O U ^ / \ " 7 - M O S 3 - > y I FET l f f l 't y ttfélSI U f i : mm ft o tt S » Œ 150VJË»T4


    OCR Scan     		PDF 2SK2131 2SK2131tiN5L 150VJÃ IEI-620) A9MI12& MTF110 2SK2131

    transistor fc 1013

    Abstract: No abstract text available
    Text: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS U nit in mm 03.3 + 0.2 20.5MM. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode •


    OCR Scan     		PDF GT60M302 transistor fc 1013

    GT40M101

    Abstract: No abstract text available
    Text: GT40M101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : VCE(sat)~3.4V (Max.) Enhancement-Mode


    OCR Scan     		PDF GT40M101 GT40M1 2-16F GT40M101