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    150W DARLINGTON TRANSISTOR TO3 PACKAGE Search Results

    150W DARLINGTON TRANSISTOR TO3 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    150W DARLINGTON TRANSISTOR TO3 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    150w darlington transistor to3 package

    Abstract: LE17 MJ4035 TRANSISTOR C 1177
    Text: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available


    Original     		MJ4035 300us, O-204AA) 150w darlington transistor to3 package LE17 MJ4035 TRANSISTOR C 1177 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available


    Original     		MJ4035 300us, O-204AA) PDF

    TRANSISTOR BDX

    Abstract: pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B
    Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO


    Original     		BDX66 -100V -120V O-204AA) TRANSISTOR BDX pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO


    Original     		BDX66 -100V -120V O-204AA) PDF

    transistor 8026

    Abstract: pnp 150w darlington transistor to3 package
    Text: 2N6052 MECHANICAL DATA PNP DARLINGTON SILICON POWER TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 VCEO = 100V IC = 12A PD = 150W 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)


    Original     		2N6052 O-204AA) transistor 8026 pnp 150w darlington transistor to3 package PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6052 MECHANICAL DATA PNP DARLINGTON SILICON POWER TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 VCEO = 100V IC = 12A PD = 150W 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)


    Original     		2N6052 O-204AA) 3802s, PDF

    150w darlington transistor to3 package

    Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
    Text: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly


    Original     		NTE97 NTE97 150w darlington transistor to3 package NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV PDF

    transistor darlington package to.3

    Abstract: transistor mj3001 MJ2501 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin MJ3001 150w darlington transistor to3 package pnp 150w darlington transistor to3 package
    Text: MJ2501 - PNP MJ3001 - NPN SEME LAB MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . APPLICATIONS 1 1 .4 3 (0 .4 5 0 )


    Original     		MJ2501 MJ3001 MJ3001 transistor darlington package to.3 transistor mj3001 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin 150w darlington transistor to3 package pnp 150w darlington transistor to3 package PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 PDF

    600W TRANSISTOR AUDIO AMPLIFIER

    Abstract: Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995
    Text: National Semiconductor Application Note 446B 446B October 1987 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corp Santa Clara California Abstract The standard junction-isolated power process has been modified by the addition of polycrystalline-film resistors to solve the topological problems encountered in


    Original     		01-percent 600W TRANSISTOR AUDIO AMPLIFIER Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995 PDF

    Widlar

    Abstract: AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER
    Text: Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions. Still


    Original     		an009301 Widlar AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER PDF

    Widlar

    Abstract: lm12 op amp 150W TRANSISTOR AUDIO AMPLIFIER 800W TRANSISTOR npn 800w inverter AN-446B frederiksen Three-Five Widlar AN-21 LM12
    Text: National Semiconductor Application Note 446B April 1998 Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions.


    Original     		PDF

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 PDF

    transistor 1FX

    Abstract: F54C
    Text: 3. Thermal Stability and Radiation Design of Transistor Circuit One of th e ch aracteristics of sem iconductor products such as tra n sisto r and diode is th a t th e electrical ch aracteristic is very susceptible to te m p eratu re . T herefore, in circuit design, it


    OCR Scan     		2SC3626 transistor 1FX F54C PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


    Original     		Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008 PDF

    STK412-750

    Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
    Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc


    Original     		SELT2WA10C SELT2WC10C SELT2WD10C SELT2WE10C SELT2WF10C SELT2WH10C SELT2WJ10C SELT2WK10C SELT2WA13C SELT2WC13C STK412-750 STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870 PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    hitachi mosfet power amplifier audio application

    Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
    Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3


    OCR Scan     		RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56 PDF

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: schematic diagram inverter 5000w schematic diagram power inverter 5000w, 12v dc schematic diagram inverter 5000w USING MOSFET power amplifier 5000W with PCB 5000w audio amplifier circuit diagram 5 channels 5000w audio amplifier circuit diagram 4000w audio amplifier 500w pioneer power amp circuit diagram igbt inverter welder schematic
    Text: Power Amplifier Product Matrix 1200 PA89 900 PA97 500 PA95 PA88 450 PA15 PA91 PA85/PA98 PA93 400 PA92 350 PA41/PA42/PA44 300 Supply Voltage V PA94 PA90 PA84 PA83 PA82J PA08 PB58 PA04 200 PA81J PA46 150 PA03 PB50 PA45 PA07 100 PA12 PA13 PA10 90 PA05 PA61 PA51


    Original     		PA85/PA98 PA41/PA42/PA44 PA82J PA81J PA21/25/26 1000w inverter PURE SINE WAVE schematic diagram schematic diagram inverter 5000w schematic diagram power inverter 5000w, 12v dc schematic diagram inverter 5000w USING MOSFET power amplifier 5000W with PCB 5000w audio amplifier circuit diagram 5 channels 5000w audio amplifier circuit diagram 4000w audio amplifier 500w pioneer power amp circuit diagram igbt inverter welder schematic PDF

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


    OCR Scan     		38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 PDF

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 4000w audio amplifier 4000w AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 200W AUDIO booster CIRCUIT DIAGRAM 5000w audio amplifier circuit diagram PA09 8 PIN TO-3 PACKAGE DIMENSIONS 3000w audio amplifier 5000w power amplifier circuit diagram power amplifier 5000W with schematic 50w ultrasonic generator 40khz
    Text: For latest updates, please see Product SA01 SA02 SA03 SA04 SA06 SA07 SA13 SA14 SA16 SA50 SA51 PA01/73 PA02 PA03 PA04 PA05 PA07 PA08 PA09 PA10 PA12 PA19 PA21/25/26 PA41/42 PA44 PA45 PA46 PA51 PA61 PA81/82J


    Original     		PA01/73 PA21/25/26 PA41/42 PA81/82J 1000w inverter PURE SINE WAVE schematic diagram 4000w audio amplifier 4000w AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 200W AUDIO booster CIRCUIT DIAGRAM 5000w audio amplifier circuit diagram PA09 8 PIN TO-3 PACKAGE DIMENSIONS 3000w audio amplifier 5000w power amplifier circuit diagram power amplifier 5000W with schematic 50w ultrasonic generator 40khz PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF