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    SEMIKRON SEMIX151GD12T4S

    SEMIX 13 TRENCH IGBT MODULE Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA SEMIX151GD12T4S 2
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    Untitled

    Abstract: No abstract text available
    Text: SEMiX 151GD12T4s Absolute Maximum Ratings Symbol Conditions IGBT  -  * 1 -  '2) *   ()*/       # '(.  (3. "   4. * '4. " 7). " 9 (.  -  '). * '. >   () * '@. "   4. * '7. " 7). " :. " - A 7. , B '2)


    Original     		PDF 151GD12T4s

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 151GD12T4s Absolute Maximum Ratings Symbol Conditions IGBT  -  * 1 -  '2) *   ()*/       # '(.  (3. "   4. * '4. " 7). " 9 (.  -  '). * '. >   () * '@. "   4. * '7. " 7). " :. " - A 7. , B '2)


    Original     		PDF 151GD12T4s

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 151GD12T4s Absolute Maximum Ratings Symbol Conditions IGBT  -  * 1 -  '2) *   ()*/       # '(.  (3. "   4. * '4. " 7). " 9 (.  -  '). * '. >   () * '@. "   4. * '7. " 7). " :. " - A 7. , B '2)


    Original     		PDF 151GD12T4s