d2s diode
Abstract: D2S DIODE schottky d2s schottky d2s6m diode d2s 251C AX078
Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX078 D2S6M 60V 2A i Feature • Tj=15CfC • Tj=150°C • P r r s m P K ^ V î/ x S ü E • P rrsm 27.5 • DC/D c u y jt— ? • WM.f-hs O A tlfg • jS S .J K 27.5 I 5 I Rating Pi <»4.o •2:
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15ffC
AX078
J533-1)
d2s diode
D2S DIODE schottky
d2s schottky
d2s6m
diode d2s
251C
AX078
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marking code aaat
Abstract: AX057 marking aaat sg diode code marking diode marking code U6 46t marking diode MARKING CODE sg d1ns6
Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS6 * I 60 V 1A i ÜJ Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x S ü E • P rrsm <b2.6 »2 Rating M Main Use • Switching Regulator • D C /D c u y jt— ? Unit : mm Weight 0.19« (Typ >
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15ffC
AX057
K52mm
CJ533-1
marking code aaat
AX057
marking aaat
sg diode code marking
diode marking code U6
46t marking
diode MARKING CODE sg
d1ns6
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C
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IXGH30N60BD1
150PC
15CFC;
O-247
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DIODE d3s
Abstract: MARKING MM d3s diode d3s4m D3S4 d3s4m diode diode MARKING CODE A9
Text: Schottky Barrier Diode Axial Diode OUTLINE D3S4M 40V 3A Feature • Tj=15CfC • Tj=150°C • P r r sm P K ^ V î/ x S ü E • P rrsm Rating Main Use • Sw itching Regulator • DC/D c u y jt— ? • D C /D C Converter • W M . f - h s O A t lf g • Hom e Appliance, G am e, Office Automation
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15ffC
-40-a
It501
J533-1
DIODE d3s
MARKING MM
d3s diode
d3s4m
D3S4
d3s4m diode
diode MARKING CODE A9
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AX078
Abstract: MARKING JM 251C 25T160 d2s4m D2S4 122T
Text: Schottky Barrier Diode Axial Diode OUTLINE D2S4M Unit : mm Package I AX078 W eight 0.38g Typ 40V 2A CD = E Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x (S ü E • P rrsm 27.5 Rating 27.5 I Main Use M * iS M iK im M arking • Switching Regulator
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15ffC
AX078
J533-1
AX078
MARKING JM
251C
25T160
d2s4m
D2S4
122T
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D1NS4 diode
Abstract: AX057 marking aaat ji13t
Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS4 Unit : mm Weight 0.19k T yp 40 V 1A 2^ i Feature 02.6 • Tj=150°C • P rr sm Rating • Tj=15CfC • P r r s m P K ^ V î/ x (S ü E *2 -M - Main Use • • • • • DC/D c u y j t —?
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15ffC
AX057
50e0-52mm
J533-1
D1NS4 diode
AX057
marking aaat
ji13t
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2N5002
Abstract: No abstract text available
Text: TYPES 2N5002, 2N5004. 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR AN SISTO RS W IT H CO M PUTER-D ESIG NED ISO TH ER M A L G EO M ETR Y 3 3 C B -4 mC< • For Complementary Use with 2N 5003, 2N 5005, 2N 51 51, and 2N 5153
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2N5002,
2N5004.
2N5152,
2N5154
2N5002
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OX36D-S-MR-R
Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
Text: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing
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12000-square-meter
IS09000-2000,
Min15
MXF3200
MXF3200A
12WCMXF3200)
6WCMXF3200A)
OX36D-S-MR-R
dox5
18M08
transistor z7m
st z7m
Bowei Integrated Circuits
oxln50d
TXM11
tt 2246
transistor K117
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON * 7 m TDA8140 I* ® q 1 [L M (q M © S HORIZONTAL DEFLECTION POWER DRIVER • CONTROLLED DRIVING OF THE POWER TRANSISTOR DURING TURN ON AND OFF PHASE FOR MINIMUM POWER DISSIPA TION AND HIGH RELIABILITY ■ HIGH SOURCE AND SINK CURRENT CAPA
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TDA8140
0D5fl334
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KA1M0680
Abstract: No abstract text available
Text: SAMSUNG POWER SWITCH KA1M0680 FEATURES TO-3P -P recision fixed operating frequency 70KHz -P u lse by pulse over current limiting -O v e r load protection -Internal thermal shutdown function -U n d e r voltage lockout -Internal high voltage sense FET -S o ft start
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KA1M0680
70KHz)
KA1M0680
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CRD Diode B
Abstract: irgni120f06
Text: International Sor]Rectifier PD-9.974C IRGNI120F06 “CHOPPER" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design • Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses Description
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10KHz
50KHz
IRGNI120F06
100nH
C-200
CRD Diode B
irgni120f06
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SJE1497
Abstract: Transistor SJE1497
Text: ¿2&M0SPEC PNP PNP SILICON POWER TRANSISTORS SJE1497 SJE1497 transistor is designed for use in general purpose Power amplifier,verticai output application FEATURES: * Collector-Emitter Voltage v c e o = 150V Min * DC Current Gain hFE= 30(Min)@lc= 300mA 1.5 AMPERE
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SJE1497
300mA
150oC
15CfC
Transistor SJE1497
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CDSH3-16-G
Abstract: CDSH3-56-G CDSH3-70-G CDSH3-99-G SMD Diode
Text: COMCHIP Small Signal Switching Diodes S M D D IO D E S P E C IA L IS T CDSH3-99-G/ 70-G/ 56-G/ 16-G Reverse Voltage: 85 Volts Forward Continue Current:155mA RoHS Device Features Designed for mounting on small surface. High speed switching. High mounting capability, strong surge
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CDSH3-99-G/
155mA
OT-523,
MIL-STD-750,
CDSH3-16-G
CDSH3-99-G
CDSH3-70-G
CDSH3-56-G
OT-523
QW-B0009
CDSH3-56-G
SMD Diode
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CDP18S601
Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
Text: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from
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132nd
CDP18S601
CDP1802CD
MPM-206
RCA cosmac 1802
CD4061
CDP18S012
CDP1802CE
RCA-CDP1802
im6508
CDP18S007
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DM8570
Abstract: DM8520 CV 7599 diode SN7401 DM9093 54175 MT28F400B3WG-8 vox vkw DM7570 logic diagram of 74185 SN54176
Text: Introduction Here is the new Digital Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from small instruments to computer designs. For information regarding newer devices introduced since the printing of this handbook, or for further
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54L/74L
AN-36
AN-37
AN-43
AN-45
AN-47
AN-49
AN-60
AN-61
AN-68
DM8570
DM8520
CV 7599 diode
SN7401
DM9093
54175
MT28F400B3WG-8 vox vkw
DM7570
logic diagram of 74185
SN54176
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Untitled
Abstract: No abstract text available
Text: _ CY7C225 CYPRESS _ SEMICONDUCTOR 512 x 8 Registered PROM Features • C M O S for optimum speed/pow er • Slim , 300 mil, 24 pin plastic or hermetic D IP , or 28 pin LCC floating gate technology and byte-wide intelligent program m ing algorithms.
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CY7C225
CY7C225
CY7C225-30PC
CY7C225-30DC
CY7C225-30LC
CY7C225-30DMB
CY7C225-30LMB
CY7C225-35DMB
CY7C225-35LMB
CY7C225-40PC
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AN211
Abstract: lm10blh LM10CT shunt regulator negative isolated voltage sensor
Text: LM10 National mm Semiconductor LM10 Operational Amplifier and Voltage Reference General Description The LM10 series are monolithic linear ICs consisting of a precision reference, an adjustable reference buffer and an independent, high quality op amp. The unit can operate from a total supply voltage as low as
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AN-211.
AN211
lm10blh
LM10CT
shunt regulator negative
isolated voltage sensor
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1124G
Abstract: TCDT1120 DIN 50014
Text: Temic Semiconductors TCDT1120 G Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
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TCDT1120
D-74025
12-Dec-97
1124G
DIN 50014
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power ic 501 amp
Abstract: MJE305 MJE2955T ST MJE2955T MJE3055T
Text: MJE2955T PNP / MJE3055T NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) Collector Cutoff Current (V CE = 3 0 V ,IB = 0 )
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MJE2955T
MJE3055T
15CFC
power ic 501 amp
MJE305
MJE2955T ST
MJE3055T
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transistor 2SC2922
Abstract: 2SC2922 150W TRANSISTOR AUDIO AMPLIFIER power amplifier 2sc2922 2SA1216
Text: Æ & m o s p e c HIGH-POWER NPN SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching application. FEATURES: * Recommend for 150W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SA1216 17 AMPERE POWER
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2SA1216
2SC2922
150oC
600mA
400mA
300mA
VCE-12
transistor 2SC2922
150W TRANSISTOR AUDIO AMPLIFIER
power amplifier 2sc2922
2SA1216
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d 5287 transistor
Abstract: 2N6127 transistor c 5287 A12LC
Text: TYPE 2N6127 P-N-P SILICON POWER TRANSISTOR H IG H -F R E Q U E N C Y , HIGH-PO W ER T R A N S IS T O R W ITH C O M P U T E R -D E S IG N E D IS O T H E R M A L G E O M E T R Y 3 05 H mc < < '" S ra £ « 40 mJ Reverse Energy Rating with lc = 20 A and 4 V Reverse Bias
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2N6127
2N6128
d 5287 transistor
transistor c 5287
A12LC
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15 3cv sec
Abstract: No abstract text available
Text: International IQR Rectifier PD - 9.1592A IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, V qe = 15V
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IRG4BC40K
O-247AC
O-22C1AB
15 3cv sec
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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