2N2907 application notes
Abstract: 2N2907 a TRANSISTOR
Text: MCC 2N2907 2N2907A omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
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2N2907
2N2907A
600mA)
2N2907A
2N2907 application notes
2N2907 a TRANSISTOR
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2N4403 noise figure
Abstract: No abstract text available
Text: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range
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2N4403
-55OC
150OC
MIL-STD-202E
583-2N4403
2N4403 noise figure
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2N2907A
Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB
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MIL-PRF-19500/291
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
2N2906AUBC
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
2N2907A
2N2906AUBC
2N2907AUB
2N2906A
2N2907A JANTX
2N2907AUBC
10VDC
2N2906AL
2N2906AUA
2N2906AUB
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Untitled
Abstract: No abstract text available
Text: Features • • • Compatible with TTL Gates Push−On Connector Terminals Mounts on a TO3 Transistor Heat Sink RS2 Series Printed Circuit Board Mountable Solid State Relay, 7 Amp. D37 1.500 38.1 1.188 (30.2) .325 (8.3) INPUT .670 (17.0) Max OUTPUT .500
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12VDC
15mADC
2500VAC
500VDC)
240VAC
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N4401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information
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2N4401
600mWatts
-55oC
150oC
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125OC
Abstract: MMBT2907LT1
Text: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range
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MMBT2907LT1
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
CHARA10
125OC
MMBT2907LT1
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2222a
Abstract: mps2222 equivalent 2222 mps2222 MPS2222A MPS2222 S2222AC S2222A 2222AC
Text: MPS2222 MPS2222A 3 TO-92 2 1 1 MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222A MP S 2222 MP S 2222A MP S 2222 MP S 2222A MP S 2222A MP S 2222A WEITRON http://www.weitron.com.tw 2 3 MPS2222 MPS2222A ELECTRICAL CHARACTERISTICS TA=2 5 C unles s otherwis e noted (Countinued)
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MPS2222
MPS2222A
270TYP
2222a
mps2222 equivalent
2222 mps2222
MPS2222A
MPS2222
S2222AC
S2222A
2222AC
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Untitled
Abstract: No abstract text available
Text: MCC BAT42W THRU BAT43W omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • 200mW Schottky Diodes 30 Volts For General Purpose applications These diodes are also available in the DO-35 case with the type
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BAT42W
BAT43W
200mW
DO-35
BAT42
BAT43
OD123
BAT42W
BAT43W
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Untitled
Abstract: No abstract text available
Text: MMBT2907AW PNP General Purpose Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 2 EMITTER SOT-323(SC-70) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Value -60 -60 -5.0
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MMBT2907AW
OT-323
SC-70)
MMBT2907AW
OT-323
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Untitled
Abstract: No abstract text available
Text: MMBT4401 Switching Transistor NPN Silicon COLLECTOR 3 3 * “G” Lead Pb -Free 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics
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MMBT4401
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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MMBT2222AW
OT-323
SC-70)
MMBT2222AW
300us,
150mAdc,
15mAdc)
50mAdc)
mAdc400
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Untitled
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBT2222A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration
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MMBT2222A
OT-23
350mWatts
OT-23
10mAdc,
60Vdc,
IC/10
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Untitled
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBT4403 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration
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MMBT4403
OT-23
350mWatts
OT-23
30Vdc,
IC/10
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SBT2222F
Abstract: SBT2907F IC600
Text: SBT2222F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907F Ordering Information
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SBT2222F
SBT2907F
OT-23F
KST-2079-000
30Vdc,
150mAdc,
15mAdc
30Vdc
SBT2222F
SBT2907F
IC600
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TL 2N2222A npn transistor
Abstract: 2N2222A JANTX 2N2222A JANTXV 2N2222A JAN MICROSEMI 2N2222A 2N2221A JANTX 2N2222AUB 2N2221A 2N2221AL 2N2221AUA
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2221AL 2N2221AUA 2N2221AUB
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MIL-PRF-19500/255
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
TL 2N2222A npn transistor
2N2222A JANTX
2N2222A JANTXV
2N2222A JAN
MICROSEMI 2N2222A
2N2221A JANTX
2N2222AUB
2N2221A
2N2221AL
2N2221AUA
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Untitled
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N4403 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B PNP General Purpose Amplifier
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2N4403
600mWatts
30Vdc,
OT-23
IC/10
25MHz
200MHz
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Untitled
Abstract: No abstract text available
Text: MMBT2907AT COLLECTOR PNP General Purpose Transistors 3 * “G” Lead Pb -Free 3 1 1 2 BASE SOT-523(SC-75) 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Value -60 -60 -5.0
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MMBT2907AT
OT-523
SC-75)
MMBT2907AT
SC-75
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N4402 Features • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA
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2N4402
500mA
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • Epitaxial Die Construction Small Surface Mount Package Marking:K1P • Case Material: Molded Plastic.
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MMDT2222A
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Untitled
Abstract: No abstract text available
Text: 2N3501 MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# NPN BIPOLAR TRANSISTOR Features • • • • 150 Volts 500mAmps TO-39 Package Meets MIL-S-19500/366
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2N3501
500mAmps
MIL-S-19500/366
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT4401 Features • • • • • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation
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MMBT4401
OT-23
350mWatts
600mA
OT-23
10mAdc,
35Vdc,
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hFE-20
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# PN2222A Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B NPN General Purpose Amplifier
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PN2222A
600mWatts
10mAdc,
60Vdc,
10Vdc)
150mAdc,
hFE-20
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MARKING P2F
Abstract: transistors sot-223 06a
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • PZT2907A PNP Plastic-Encapsulate Transistors Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation
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PZT2907A
OT-223
OT-223
-50Vdc,
--10Vdc)
-10Vdc)
-10mAdc,
-150mAdc,
MARKING P2F
transistors sot-223 06a
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XFGIC100POL
Abstract: 208H
Text: 1. M echanical D im ensions: 3. E lectrical Specification s: 25°C ISOLATION: 1500Vrms TURNS RATIO: PRI/SEC 1CT:1CT ±2% SEC OCL: 350uH Min @100KHz 100mV, 15mAdc Rise Time: 1.75ns Max. INSERTION LOSS: -1 .0 d B MAX @ 1MHz-80MHz C D.2 4 0 0 .7 3 0 Max - 1 .1 dB MAX @80— 100MHz
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OCR Scan
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1500Vrms
350uH
100KHz
100mV,
15mAdc
1MHz-80MHz
100MHz
10xygen
E151556
102mm)
XFGIC100POL
208H
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