15MAR04 Search Results

2.54mm Header 3 Pin

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

SST201

Abstract: SST204 J/SST202 J201 J202 J204 SST202
Contextual Info: J/SST201 Series Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 −0.3 to −1.5 −40 0.5 0.2 J/SST202 −0.8 to −4 −40 1 0.9 J/SST204 −0.3 to −2

40431

Abstract: Si7970DP
Contextual Info: Si7970DP Vishay Siliconix New Product Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.019 @ VGS = 10 V 10.2 0.026 @ VGS = 4.5 V 8.7 D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Dual MOSFET for Space Savings

J/SST202

Abstract: SST201 SST204 J201 equivalent J201 J202 J204 SST202 SOT-23 2.D
Contextual Info: J/SST201 Series Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 −0.3 to −1.5 −40 0.5 0.2 J/SST202 −0.8 to −4 −40 1 0.9 J/SST204 −0.3 to −2

40373

Abstract: TO-205AD material TO-205AD
Contextual Info: Package Information Vishay Siliconix TO-205AD TO-39 TALL LID CD INCHES P Q Dim CD CH HD LC LD LL LU L1 L2 P Q r TL TW m CH L1 LU L2 LL Seating Plane MILLIMETERS Min Max Min Max 0.305 0.335 7.75 8.51 0.240 0.260 6.10 6.60 0.335 0.370 8.51 0.200 TP Notes 9.40

Siliconix JFETs Dual

Abstract: SST421NL SST423NL U421 U423 423NL 421nl 421n
Contextual Info: SST421NL/423NL Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) jVGS1 − VGS2j Max (mV) SST421NL −0.4 to−2 −40 0.3 10 SST423NL −0.4 to −2 −40 0.3 25 FEATURES D D D D D D D

Si3441BDV

Abstract: Si3441BDV-T1
Contextual Info: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1

Si6963BDQ

Abstract: 7277-2
Contextual Info: Si6963BDQ Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −3.9 0.080 @ VGS = −2.5 V −3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6963BDQ G1 8 D2 7 S2 G2 6 S2 5 G2

40410

Abstract: 40410 datasheet Si3465DV MARKING code 5C
Contextual Info: Si3465DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.080 @ VGS = −10 V −4.0 0.170 @ VGS = −4.5 V −2.7 APPLICATIONS D Load Switch − Notebook PC − Game Machine

SUD50N03-16P

Contextual Info: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS PCB LAYOUT - COMPONENT VIEW A MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

Si3447BDV

Abstract: 1600 v mosfet ultra low igss pA Si3447BDV-T1
Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance

CR430

Abstract: 40250 Transistor CR330 S-40250-Rev CR160 CR180 CR200 CR220 CR240 CR270
Contextual Info: CR160 Series Vishay Siliconix Current Regulator Diodes CR160 CR220 CR300 CR390 CR180 CR240 CR330 CR430 CR200 CR270 CR360 CR470 PRODUCT SUMMARY Part Number Typ IF mA Min POV (V) Part Number Typ IF (mA) Min POV (V) CR160 1.60 100 CR300 3.00 100 CR180 1.80

ci 741

Abstract: C2091 L1278 u 741 l1141 L3241
Contextual Info: DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWINC IS UNPUBLISHED. RELEASED FOR =UB_ICATION ,19 COPYR.GHT ,9 Br AMP INCORPORATED. ALL INTERNATIONAL RIOETE RESERVED. ICCC luibl I DW I UU /l\ HOUSING S C L O P , UU TIN E ^DA~E - L IQ U ID 9 4 V-0 , BLACK.

40423

Contextual Info: Si7370DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 15.8 0.013 @ VGS = 6 V 14.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching

Contextual Info: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0035 @ VGS = 10 V 110 a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D D Automotive − ABS − 12-V EPS − Motor Drivers

Contextual Info: SUD70N03-06P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.006 @ VGS = 10 V 70 APPLICATIONS 0.009 @ VGS = 4.5 V 70 D DC/DC Converters − Optimized For Low Side D Synchronous Rectifiers VDS (V)

Contextual Info: Si4384DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Gen II Power MOSFETS D PWM Optimized D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V 15 0.0125 @ VGS = 4.5 V 12 APPLICATIONS

Contextual Info: Si7120DN Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 60 D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKr 1212-8 Package with Low 1.07-mm Profile D 100% Rg Tested ID (A) 0.019 @ VGS = 10 V

SIL6029

Abstract: POWER INTEGRATIONS dual flyback converter SCD-0403-100MT vogt transformer vogt 408 15 keihin schematic diagram dc-dc flyback converter VOGT T1 switching transformer 28/erl 35 2005 transformer CAT431L
Contextual Info: Title Engineering Prototype Report for EP-68 – 6.6 W DC-DC Flyback Converter Using DPA-Switch DPA423G Specification Input: 36-57 VDC, Output: 3.3 V / 2 A Application Power over Ethernet (PoE) Power Supply Author Power Integrations Applications Department

SUD50N03-16P

Contextual Info: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab

JC EC

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

40393

Abstract: SST201 SST202 2N433 J201 J202 J204 SST204 to236 2n4338
Contextual Info: J/SST201 Series Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 −0.3 to −1.5 −40 0.5 0.2 J/SST202 −0.8 to −4 −40 1 0.9 J/SST204 −0.3 to −2

Si4463BDY-E3

Abstract: Si4463BDY
Contextual Info: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View