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    15N120C Search Results

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    15N120C Price and Stock

    Rochester Electronics LLC HGT1S15N120C3

    35A, 1200V, N-CHANNEL IGBT
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    DigiKey HGT1S15N120C3 Bulk 4,004 75
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    Rochester Electronics LLC HGT1S15N120C3S

    35A, 1200V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGT1S15N120C3S Bulk 695 75
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    Rochester Electronics LLC HGTG15N120C3

    35A, 1200V, N-CHANNEL IGBT
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    DigiKey HGTG15N120C3 Bulk 517 70
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    Infineon Technologies AG IKW15N120CS7XKSA1

    IGBT TRENCH FS 1200V 36A TO247-3
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    DigiKey IKW15N120CS7XKSA1 Tube 198 1
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    Mouser Electronics IKW15N120CS7XKSA1 8
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    Newark IKW15N120CS7XKSA1 Bulk 224 1
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    Rochester Electronics IKW15N120CS7XKSA1 180 1
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    Chip1Stop IKW15N120CS7XKSA1 Tube 240
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    New Advantage Corporation IKW15N120CS7XKSA1 480 1
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    IXYS Corporation IXGP15N120C

    IGBT 1200V 30A 200W TO220AB
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    DigiKey IXGP15N120C Tube 50
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    15N120C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    15N120C3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    15N120C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		PDF 15N120C O-247 O-268

    15N120BD1

    Abstract: 15N120 15N120CD1 IXGT15N120BD1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120BD1 15N120CD1 O-247AD 15N120BD1 15N120 15N120CD1 IXGT15N120BD1

    Untitled

    Abstract: No abstract text available
    Text: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C


    Original     		PDF 15N120C O-220AB O-263 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120C O-220AB O-263 O-220

    15N120BD1

    Abstract: 15N120CD1 IXGT15N120BD1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120BD1 15N120CD1 O-247AD O-268 15N120CD1 IXGT15N120BD1

    Untitled

    Abstract: No abstract text available
    Text: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat =1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


    Original     		PDF 15N120C O-220AB O-263

    oni350

    Abstract: IXGA 15N120C 15N120C
    Text: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat =1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


    Original     		PDF 15N120C O-220AB O-263 M10V/ns oni350 IXGA 15N120C 15N120C

    IXGT15N120BD1

    Abstract: 15N120BD1
    Text: Advanced Technical Information VDSS Low VCE sat IGBT with Diode High Speed IGBT with Diode IXGH/T 15N120BD1 IXGH/T 15N120CD1 Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES


    Original     		PDF 15N120BD1 15N120CD1 O-247AD O-268 IXGT15N120BD1

    Untitled

    Abstract: No abstract text available
    Text: IGBT IXGH 15N120C VCES = 1200 V = 30 A IXGT 15N120C IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Lightspeed Series Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		PDF 15N120C O-268 O-247 O-268 O-247)

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120C 15N120C O-220AB O-263

    Untitled

    Abstract: No abstract text available
    Text: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V IC25 = 30 A 3.8 V VCE sat = tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		PDF 15N120C 15N120C O-268 O-247

    15n120

    Abstract: 15N120CD1 15N120BD1 IGBT g
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 15N120BD1 15N120CD1 O-247AD 15n120 15N120CD1 15N120BD1 IGBT g

    HGT1S15N120C3

    Abstract: HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C
    Text: 15N120C3, 15N120C3, 15N120C3, 15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching


    Original     		PDF HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 150oC. 350ns HGT1S15N120C3 HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C

    15N120C3D

    Abstract: HGTG15N120C3D LD26 RHRP15120 15N120C
    Text: 15N120C3D 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The 15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance


    Original     		PDF HGTG15N120C3D HGTG15N120C3D 150oC. 150oC 350ns 15N120C3D LD26 RHRP15120 15N120C

    15N120C3

    Abstract: HGT1S15N120C3 HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 HGTG
    Text: S E M I C O N D U C T O R 15N120C3, 15N120C3, 15N120C3, 15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching


    Original     		PDF HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 150oC. 350ns 15N120C3 HGT1S15N120C3 HGTG15N120C3 HGTP15N120C3 RHRP15120 HGTG

    15N120B2

    Abstract: IXGP15N120B2 IXGA15N120B2
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching =1200 V = 30 A = 3.5 V = 137 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR


    Original     		PDF 15N120B2 O-220AB O-263 065B1 728B1 123B1 728B1 15N120B2 IXGP15N120B2 IXGA15N120B2

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original     		PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    RGE 17-18

    Abstract: TO220-4 weight
    Text: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i


    OCR Scan     		PDF 15N120C O-220 O-263 RGE 17-18 TO220-4 weight

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM


    OCR Scan     		PDF 15N120C

    15N120CD1

    Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047
    Text: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR


    OCR Scan     		PDF 15N120BD1 15N120CD1 O-268 15N120CD1 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047

    15N120C3

    Abstract: No abstract text available
    Text: 15N120C3, 15N120C3, 15N120C3, 15N120C3S HARFRIS S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, T C = 25°C The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching


    OCR Scan     		PDF HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 350ns 15N120C3

    Untitled

    Abstract: No abstract text available
    Text: 15N120C3D S E M I C O N D U C T O R " " m • w ■ mM v 35A, 1200V, UFS Series N-C hannel IGBT w ith A nti-Parallel H yperfast Diode May 1997 Features Description • 35A, 1200V at T c = 25°C The 15N120C3D is a MOS gated high voltage switch­ ing device combining the best features of MOSFETs and


    OCR Scan     		PDF HGTG15N120C3D HGTG15N120C3D 350ns 1-800-4-HARRIS

    247EH

    Abstract: No abstract text available
    Text: M S E A R R I S H M I C O N D U C T O R G T G 1 5 N 1 2 C 3 D 35A, 1200V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e M ay 1997 Features Description • 35A, 1 200V at T c = 2 5 ° C T h e H G T G 1 5 N 1 2 0 C 3 D is a M O S gated high vo lta g e s w itc h ­


    OCR Scan     		PDF

    15N120C3

    Abstract: TP15N120 15n120
    Text: HAFRRIS 15N120C3, 15N120C3, 15N120C3, 15N120C3S S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1 200V, T c = 25°C The HGTG15N120G3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching


    OCR Scan     		PDF HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGTG15N120G3, HGT1S15N120C3 HGT1S15N120C3S 1-800-4-HARRIS 15N120C3 TP15N120 15n120