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    15NS Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    EP610LI-15 Rochester Electronics LLC OT PLD, 15ns, PQCC28, PLASTIC, LCC-28 Visit Rochester Electronics LLC Buy
    SN75115NSR Texas Instruments Dual Differential Line Receiver 16-SO 0 to 70 Visit Texas Instruments Buy
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    15NS Price and Stock

    Infineon Technologies AG BSC093N15NS5ATMA1

    MOSFET N-CH 150V 87A TDSON
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    Mouser Electronics BSC093N15NS5ATMA1 12,913
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    Bristol Electronics BSC093N15NS5ATMA1 305
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    Rochester Electronics BSC093N15NS5ATMA1 774 1
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    Win Source Electronics BSC093N15NS5ATMA1 30,552
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    Infineon Technologies AG BSC360N15NS3GATMA1

    MOSFET N-CH 150V 33A 8TDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSC360N15NS3GATMA1 Reel 10,000 5,000
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    Rochester Electronics BSC360N15NS3GATMA1 580 1
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    Win Source Electronics BSC360N15NS3GATMA1 55,773
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    Infineon Technologies AG BSZ520N15NS3GATMA1

    MOSFET N-CH 150V 21A 8TSDSON
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    DigiKey BSZ520N15NS3GATMA1 Cut Tape 9,423 1
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    BSZ520N15NS3GATMA1 Digi-Reel 9,423 1
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    BSZ520N15NS3GATMA1 Reel 5,000 5,000
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    Mouser Electronics BSZ520N15NS3GATMA1 49,322
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    Rochester Electronics BSZ520N15NS3GATMA1 59,069 1
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    Win Source Electronics BSZ520N15NS3GATMA1 13,277
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    Infineon Technologies AG BSZ300N15NS5ATMA1

    MOSFET N-CH 150V 32A TSDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSZ300N15NS5ATMA1 Digi-Reel 8,352 1
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    Rochester Electronics BSZ300N15NS5ATMA1 9,853 1
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    Infineon Technologies AG BSZ900N15NS3GATMA1

    MOSFET N-CH 150V 13A 8TSDSON
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    DigiKey BSZ900N15NS3GATMA1 Digi-Reel 8,013 1
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    BSZ900N15NS3GATMA1 Reel 5,000 5,000
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    Avnet Americas BSZ900N15NS3GATMA1 Ammo Pack 18 Weeks, 3 Days 1
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    Mouser Electronics BSZ900N15NS3GATMA1 16,191
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    15NS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8X13

    Abstract: T15V256B
    Text: tm TE CH Preliminary T15V256B 32K X 8 LOW POWER CMOS STATIC RAM SRAM FEATURES GENERAL DESCRIPTION ¡EHigh speed access time: 12/15ns The T15V256B is a low power and low voltage CMOS static RAM. organized as 32,768 x 8 bits that operates on a 2.7V to 3.6V power


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    T15V256B 12/15ns T15V256B 28-pin 8X13 PDF

    8X13

    Abstract: TAIWAN MEMORY TECHNOLOGY
    Text: tm TE CH Preliminary T15M256C 32K X 8 LOW POWER CMOS STATIC RAM SRAM FEATURES GENERAL DESCRIPTION ¡EHigh speed access time: 12/15ns The T15M256C is a low power CMOS static RAM. organized as 32,768 x 8 bits that operates on a single +5-volt power supply. Low operating


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    T15M256C 12/15ns T15M256C 28-pin 8X13 TAIWAN MEMORY TECHNOLOGY PDF

    lt 8232

    Abstract: LT 8215 lt 8219 lt 8239 LT 8209 lt 8217 lt 8227 lt 8220 LT 8233 lt 8221
    Text: GAL6002 High Performance E2CMOS FPLA Generic Array Logic Features Functional Block Diagram ICLK • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 15ns Maximum Propagation Delay — 75MHz Maximum Frequency — 6.5ns Maximum Clock to Output Delay — TTL Compatible 16mA Outputs


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    GAL6002 75MHz Tested/100% 100ms) lt 8232 LT 8215 lt 8219 lt 8239 LT 8209 lt 8217 lt 8227 lt 8220 LT 8233 lt 8221 PDF

    K6R1004C1D

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.


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    K6R1004C1D 256Kx4 32-SOJ-400 K6R1004C1D PDF

    5962-8868101LA

    Abstract: SMD a7 Transistor MT5C2564 5962-8868106LA 5962-8868103LA
    Text: SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-88681 • MIL-STD-883 24-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access


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    MT5C2564 MIL-STD-883 24-Pin 28-Pin Ti4C-20/883C MT5C2564C-25/883C MT5C2564C-35/883C MT5C2564C-45/883C MT5C2564C-55/883C MT5C2564C-70/883C 5962-8868101LA SMD a7 Transistor MT5C2564 5962-8868106LA 5962-8868103LA PDF

    Untitled

    Abstract: No abstract text available
    Text: UC1711 UC3711 Dual Ultra High-Speed FET Driver FEATURES BLOCK DIAGRAM • 25ns Rise and Fall into 1000pF 15ns Propagation Delay 7.5V REG • 1.5A Source or Sink Output Drive 6 VCC 7 A Out 5 B Out 3 Gnd 3k • Operation with 5V to 35V Supply 2.5k • High-Speed Schottky NPN Process


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    UC1711 UC3711 1000pF UDG-99078 UC1711 PDF

    F372A

    Abstract: GCOY6911 OSRAM* 640
    Text: 650nm Resonant Cavity LED-Chip 650nm Resonant Cavity LED Die F372A Vorläufige Daten / Preliminary Data Besondere Merkmale Features • • • • • keine Schwelle hohe Leistung Kurze Schaltzeiten: 15ns Oberflächenstrahler Optimale Wellenlänge für Kunstoff-Faserübertragung Plastic optical


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    650nm F372A F372A GCOY6911 OSRAM* 640 PDF

    PW 2N

    Abstract: 4392
    Text: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)


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    2N/PN/SST4391 2N/PN/SST4391, OT-23 PW 2N 4392 PDF

    Untitled

    Abstract: No abstract text available
    Text: UC1711 UC3711 Dual Ultra High-Speed FET Driver FEATURES BLOCK DIAGRAM • 25ns Rise and Fall into 1000pF 15ns Propagation Delay 7.5V REG • 1.5A Source or Sink Output Drive 6 VCC 7 A Out 5 B Out 3 Gnd 3k • Operation with 5V to 35V Supply 2.5k • High-Speed Schottky NPN Process


    Original
    UC1711 UC3711 1000pF UDG-99078 UC1709 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet April 2, 2003 FEATURES q 15ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus


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    UT8R512K8 0E14n/cm 36-lead 02TBD) 40-lead PDF

    A15G

    Abstract: No abstract text available
    Text: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet March 11, 2003 FEATURES q 15ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus


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    UT8R512K8 0E14n/cm 36-lead 02TBD) 40-lead A15G PDF

    Untitled

    Abstract: No abstract text available
    Text: y UC1711 UC3711 UNITRODE Dual Ultra High-Speed FET Driver 15ns Propagation Delay 1.5A Source or Sink Output Drive Operation with 5V to 35V Supply High-Speed Schottky NPN Process 8-PIN MINIDIP Package ABSOLUTE MAXIMUM RATINGS note 1 Input Supply Voltage, V c c . 40V


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    UC1711 UC3711 10OOpF UC1709 UC1711. UC1711, PDF

    ta25 du14

    Abstract: No abstract text available
    Text: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits


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    ST1641OOOAG1 144-PIN STI641000AG1 44-pin -60LVG ta25 du14 PDF

    jeida+dram+88+pin

    Abstract: jeida 88 pin jeida dram 88 pin
    Text: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology


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    STI321000C1 STI321000C1-60Vx STI32100OC1-7OVx STI321000C1-80Vx 110ns 130ns 150ns 88-PIN jeida+dram+88+pin jeida 88 pin jeida dram 88 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability


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    STI368003 STI368003-60 STI368003-70 110ns 130ns 72-PIN STI368003 24pin 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic


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    STI338000 STI338000-60 STI338000-70 STI338000-80 110ns 130ns 150ns 72-PIN STI338000 PDF

    Untitled

    Abstract: No abstract text available
    Text: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic


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    STI32256 STI32256-60 STI32 STI32256-80 110ns 130ns 150ns 72-PIN STI32256 PDF

    6 PIN EEPROM

    Abstract: No abstract text available
    Text: STK11C88 SimTEK CMOS nvSRAM High Performance 32K x 8 Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • 25 and 30ns Access Times • 12 and 15ns Output Enable Access Times • Store to EEPROM Initiated by Software Sequence on Address Pins • Recall to SRAM Initiated by Software


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    STK11C88 200ns STK11C88 STK11C68 6 PIN EEPROM PDF

    Untitled

    Abstract: No abstract text available
    Text: STI644004UD1-60VG 168-PIN DIMMS 4M X 64 Bit DRAM DIM M with EDO and without Buffers FEATURES • GENERAL DESCRIPTION Performance range: ^RAC I ^CAC 60ns 15ns I rC ^HPC 104ns 25ns The Simple Technology STI644004UD1-60VG is a 4M x 64 bit Dynamic RAM high density memory module. The Simple


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    STI644004UD1-60VG 168-PIN 104ns STI644004UD1-60VG 24-pin 300-mil PDF

    Untitled

    Abstract: No abstract text available
    Text: STI648004G1 -60VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC ^RC ^HPC 60ns 15ns 104ns 25ns The Simple Technology STI648004G1-60VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple


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    STI648004G1 -60VG 144-PIN 104ns STI648004G1-60VG 32-pin 400-mil PDF

    K0032

    Abstract: Y255 QN22
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 001772A flflö ■ S M û K KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)


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    KM741006J 01772A KM741006J-10: 190mA KM741006J-12: 180mA KM741006J-15: 150mA 400mil TTbm45 K0032 Y255 QN22 PDF

    C1608

    Abstract: 22nk C1608-22NK C1608-100
    Text: STANDARD Series C1608 & C2012 SERIES C1608 C1608-10NS C1608-12NS C1608-15NS C1608-18NS C1608-22NK C1608-27NK C1608-33NK C1608-39NK C1608-47NK C16Ö8-56NK C1608-68NK C1608-82NK C1608-100* C1608-120* C1608-150* C1608-180* C1608-220* C1608-270* C1608-330* C1608-390*


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    C1608 C2012 C1608-10NS C1608-12NS C1608-15NS C1608-18NS C1608-22NK C1608-27NK C1608-33NK C1608 22nk C1608-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71024 Integrated Device Technology, Inc. FEATURES: The IDT71024 uses eight bidirectional input/output lines to provide simultaneous access to all bits in a word and has an output enable (OE) pin which operates as fast as 15ns.


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    128KX IDT71024 IDT71024 PDF

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS STATIC RAM 256K 32K x 8-BIT PRELIMINARY IDT71B256SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 ad vanced high-speed B iC M O S static RAM • Equal acce ss and cycle tim es — C om m ercia l: 10 /12/15ns • O ne C hip S elect plus one O utput E nable pin


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    IDT71B256SA /12/15ns 28-pin 200mV 71B256 300-m P28-2) PDF