sot-223 body marking D K Q F
Abstract: No abstract text available
Text: O rder th is data sheet by MMFT1N10ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount M M FT1N10ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed
|
OCR Scan
|
MMFT1N10ET1/D
OT-223
2PHX33491F-0
N10ET1/D
MMFT1N10FT1/D
sot-223 body marking D K Q F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: b 3 b 7 2 S 4 D10 1 30 1 SDO • MOTb . _ > Order this data sheet MOTOROLA by MMDF2C05E/D S E M IC O N D U C T O R TECHNICAL DATA M edium Pow er Su rfa ce M ount Products MMDF2C05E Com plem entary Half-Bridge T M O S Field Effect T ran sistors Motorola Preferred Device
|
OCR Scan
|
MMDF2C05E/D
MMDF2C05E
2PHX31324F-0
|
PDF
|
221A-06
Abstract: AN569 MTP10N40E 4803 mosfet 4801 MOSFET
Text: M O TO RO LA S E M IC O N D U C TO R T E C H N IC A L DATA Designer’s Data Sheet TM O S E -FE T ™ High Energy P o w er FET M T P 10N 40E N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to_ withstand high energy in the avalanche mode and switch efficientlyT
|
OCR Scan
|
MTP10N40E
221A-06
AN569
4803 mosfet
4801 MOSFET
|
PDF
|
MTP50N06E
Abstract: TP50N06E diode 9.1 b3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP50N06E TMOS E-FET™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 50 AMPERES RDS on = 0.025 OHM 60 VOLTS This advanced TMOS E-FET is designed to withstand high
|
OCR Scan
|
15VVGS
MTP50N06E
3b72S4
MTP50N06E
TP50N06E
diode 9.1 b3
|
PDF
|
12N10E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP 12N 10E TM O S E-FET™ P o w er Field E ffe c t Tran sisto r M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS on = 0.16 OHM
|
OCR Scan
|
|
PDF
|
1N10
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ransistor Medium Power Field Effect N-Channel Enhancement Mode Silicon Gate TMOS E-FET “ SOT-223 for Surface Mount M o to ro la P r e fe r re d D e v ic e M E D IU M P O W E R T M O S FET 1 AMP 100 V O LTS T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T
|
OCR Scan
|
OT-223
MMFT1N10E
1N10
|
PDF
|