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    16 BIT STATIC RAM Search Results

    16 BIT STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy

    16 BIT STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC244

    Abstract: M5M51016BTP A-1540 a1540 A7423
    Text: 9 9 JulJul ,1997 ,1997 MITSUBISHI LSIs LSIs MITSUBISHI M5M51016BTP,RT-10VL, M5M51016BTP,RT-10VL, -10VLL -10VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM


    Original     		PDF M5M51016BTP RT-10VL, -10VLL 1048576-BIT 65536-WORD 16-BIT BC244 A-1540 a1540 A7423

    ph44

    Abstract: 71V016 IDT71V016
    Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM


    Original     		PDF IDT71V016 16-BIT) 15/20/25ns 44-pin IDT71V016 576-bit ph44 71V016

    IDT71016

    Abstract: No abstract text available
    Text: IDT71016 CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71016 CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times


    Original     		PDF IDT71016 16-BIT) 15/20/25ns 44-pin IDT71016 576-bit

    71V016

    Abstract: datasheet for 64K RAM ph44 IDT71V016
    Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times


    Original     		PDF IDT71V016 16-BIT) 15/20/25ns 44-pin IDT71V016 576-bit 200mV 71V016 datasheet for 64K RAM ph44

    M5M51016BTP

    Abstract: RT-12VL RT-12VLL
    Text: 9 Jul ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-12VL, -12VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-12VL M5M51016BTP,RT-12VLL Access time


    Original     		PDF M5M51016BTP RT-12VL, -12VLL 1048576-BIT 65536-WORD 16-BIT RT-12VL RT-12VLL

    a1540

    Abstract: M5M51016BTP RT-10VL-I
    Text: 99Jul Jul,1997 ,1997 MITSUBISHI LSIs M5M51016BTP,RT-10VL-I, -10VLL-I 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-10VL M5M51016BTP,RT-10VLL Access time (max)


    Original     		PDF 99Jul M5M51016BTP RT-10VL-I, -10VLL-I 1048576-BIT 65536-WORD 16-BIT a1540 RT-10VL-I

    M5M51016BTP

    Abstract: RT-70L mitsubishi m5m510
    Text: 99Jul Jul,1997 ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION FEATURES PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS M5M51016BTP,RT-70L


    Original     		PDF 99Jul M5M51016BTP RT-70L -70LL -10LL 1048576-BIT 65536-WORD 16-BIT mitsubishi m5m510

    M5M5W817KT

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs 2002.9.3 Ver. 0.0 M5M5W817KT - 70HI 8388608-BIT 524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5W817KT is a f amily of low v oltage 8Mbit static RAMs organized as 524288-words by 16-bit / 1048576-words by 8-bit,


    Original     		PDF M5M5W817KT 8388608-BIT 524288-WORD 16-BIT 10485776-WORD 524288-words 1048576-words

    44-PIN

    Abstract: LH5PV16256
    Text: LH5PV16256 CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words × 16 bit organization The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)


    Original     		PDF LH5PV16256 LH5PV16256 44-PIN I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 44TSOP

    TC55W800FT

    Abstract: TC55W800FT-55 DSA0069634 TSOP48-P-1220-0
    Text: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16


    Original     		PDF TC55W800FT-55 288-WORD 16-BIT/1 576-WORD TC55W800FT 608-bit DSA0069634 TSOP48-P-1220-0

    TC55W1600FT

    Abstract: TC55W1600FT-55
    Text: TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by 16


    Original     		PDF TC55W1600FT-55 576-WORD 16-BIT/2 152-WORD TC55W1600FT 216-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip


    Original     		PDF CY7C1061G/CY7C1061GE 16-Mbit ns/15 90-mA 20-mA

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip


    Original     		PDF CY7C1061G/CY7C1061GE 16-Mbit ns/15 90-mA 20-mA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs 2002.5.28 Ver. 1.0 M5M5J167KT - 70HI 16777216-BIT 1048576-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5J167KT is a f amily of low v oltage 16Mbit static RAMs organized as 1048576-words by 16-bit, f abricated by Mitsubishi's


    Original     		PDF M5M5J167KT 16777216-BIT 1048576-WORD 16-BIT) 16Mbit 1048576-words 16-bit,

    TC55W800FT

    Abstract: TC55W800FT-55
    Text: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16


    Original     		PDF TC55W800FT-55 288-WORD 16-BIT/1 576-WORD TC55W800FT 608-bit

    1m x 16 memory module

    Abstract: No abstract text available
    Text: 4 Megabit 256K x 16-bit Static RAM Module LMM4016 DESCRIPTION FEATURES □ 4 Megabit (256K x 16-bit) Static RAM Module □ Utilizes 16 L7C197 256K x 1 Static RAMs □ Advanced CMOS Technology □ High Speed, Low Power Consumption □ TTL Compatible Inputs and


    OCR Scan     		PDF 16-bit) LMM4016 L7C197, LMM4016 L7C197 48-pin 1m x 16 memory module

    8M624

    Abstract: No abstract text available
    Text: 1 MEGABIT 64K x 16-BIT & 512K (32K x 16-BIT) CM O S STATIC RAM M ODULE IDT8M624S IDT8M612S FEATURES: DESCRIPTION: • High-density 1024K/512K-bit CMOS static RAM module The IDT8M624S/IDT8M612S are 1024K/512K-bit high-speed CMOS static RAMs constructed on a multi-layered ceramicsubstrate using four IDT71256 32K x 8 static RAMs (IDT8M624S) or


    OCR Scan     		PDF 16-BIT) IDT8M624S IDT8M612S 1024K/512K-bit IDT8M624S/IDT8M612S IDT71256 IDT8M624S) 8M624

    4016 static ram

    Abstract: TTL COMPATIBLE 4016
    Text: LOGIC DEVICES INC ELE D m SSÌaSTQS QG012Q5 =1 • _ 4 Megabit 256K x 16-bit Static RAM Module FEATURES □ 4 Megabit (256K x 16-bit) Static RAM Module □ Utilizes 16 L7C197 256K x 1 Static RAMs Q Advanced CMOS Technology Q High Speed, Low Power


    OCR Scan     		PDF QG012Q5 16-bit) L7C197 1DT7M4016 48-pin LMM4Q16 256Kx LMM4016 4016 static ram TTL COMPATIBLE 4016

    IDT7164

    Abstract: No abstract text available
    Text: 256K 16K x 16-BIT & 128K (8Kx 16-BIT) CMOS STATIC RAM PLASTIC SIP MODULES IDT 8MP656S IDT 8MP628S FEATURES: DESCRIPTION: • High-density 256K/128K CMOS static RAM modules The IDT8MP656S/IDT8MP628S are 256K/128K-bit high-speed CMOS static RAMs constructed on an epoxy laminate substrate


    OCR Scan     		PDF 16-BIT) 256K/128K IDT8MP656S) IDT8MP628) 8MP656S 8MP628S IDT8MP656S/IDT8MP628S 256K/128K-bit IDT7164

    MCM6323ATS-12

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6323A Product Preview 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM The MCM6323A is a 1,048,576 bit static random access memory organized as 65,536 words of 16 bits. Static design eliminates the need for external clocks


    OCR Scan     		PDF MCM6323A MCM6323A 44-Lead MCM6323AYJ10 MCM6323AYJ10R MCM6323ATS10 MCM6323ATS10R SCM6323AYJ10A MCM6323ATS-12

    65536-WORD

    Abstract: No abstract text available
    Text: MITSUBISHI LSlS .«AVI*'' M5M51016ATP.RT-10VL,-1OVLL p H . •»oW- ,ar0 .»tal'1 > «'"' ^ " 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536-word by 16-bit which are fabricated using


    OCR Scan     		PDF 1016A 1048576-BIT 65536-WORD 16-BIT) M5M51016ATP, 1048576-bit 16-bit 44-pin

    44256 dram

    Abstract: 44256 44256 ram dram 44256
    Text: MITSUBISHI LSIs MH25616PNA-10,-12 4194304-BIT 262144-W0RD BY 16-BIT PSEUDO-PSEUDO STATIC RAM DESCRIPTION The MH25616PNA is 262144 word x 16 bit PSEUDOPSEUDO static RAM and consist of four industry standard 256K x 4 bit dynamic RAMs in SOJ, two data selector in


    OCR Scan     		PDF MH25616PNA-10 4194304-BIT 262144-W0RD 16-BIT MH25616PNA MH25616PNA 262144-WORD 44256 dram 44256 44256 ram dram 44256

    bc2AT

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of


    OCR Scan     		PDF M5M51016BTP RT-70L -70LL -10LL 1048576-BIT 65536-WQRD 16-BIT M5M51016BTP, bc2AT

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51016ATP,RT-70L,-85L,-10L, -70LL,-85LL,-1 OLL 1048576-BIT 65536-WORD BY 16-BIT CM0S STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16 - bit which are fabricated using high-performance triple polysilicon CMOS


    OCR Scan     		PDF M5M51016ATP RT-70L -70LL -85LL 1048576-BIT 65536-WORD 16-BIT M5M51016ATP,