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    16000 MOSFET Search Results

    16000 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    16000 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P

    Untitled

    Abstract: No abstract text available
    Text: R1 2 4 2 S SERI ES 30V Input 3A Buck DC/DC converter NO.EA-191-130312 OUTLINE The R1242S Series are CMOS-based 30V Input, 3A, Synchronous Rectified Step-down DC/DC Converters with built-in Highside Switch. Each of these ICs contains Nch Highside Tr. Typ. 0.1Ω and can supply maximum


    Original     		PDF EA-191-130312 R1242S Room403, Room109, 10F-1,

    R1242

    Abstract: KTS500B106M55N0T00 R1242S GRM31CR71A226M GRM21BB11H104KA01L VLF10045T-4R7 Nippon capacitors
    Text: R1242S SERIES 30V Input 3A Buck DC/DC converter NO.EA-191-110525 OUTLINE The R1242S Series are CMOS-based 30V Input, 3A, Synchronous Rectified Step-down DC/DC Converters with built-in Highside Switch. Each of these ICs contains Nch Highside Tr. Typ. 0.1Ω and can supply maximum


    Original     		PDF R1242S EA-191-110525 Room403, Room109, 10F-1, R1242 KTS500B106M55N0T00 GRM31CR71A226M GRM21BB11H104KA01L VLF10045T-4R7 Nippon capacitors

    Nippon capacitors

    Abstract: No abstract text available
    Text: R1242S SERIES 30V Input 3A Buck DC/DC converter NO.EA-191-111123 OUTLINE The R1242S Series are CMOS-based 30V Input, 3A, Synchronous Rectified Step-down DC/DC Converters with built-in Highside Switch. Each of these ICs contains Nch Highside Tr. Typ. 0.1Ω and can supply maximum


    Original     		PDF R1242S EA-191-111123 Room403, Room109, Nippon capacitors

    GRM31CR71A226M

    Abstract: Nippon capacitors
    Text: R1242S SERIES 30V Input 3A Buck DC/DC converter NO.EA-191-101202 OUTLINE The R1242S Series are CMOS-based 30V Input, 3A, Synchronous Rectified Step-down DC/DC Converters with built-in Highside Switch. Each of these ICs contains Nch Highside Tr. Typ. 0.1Ω and can supply maximum


    Original     		PDF R1242S EA-191-101202 Room403, Room109, GRM31CR71A226M Nippon capacitors

    nippon capacitors

    Abstract: transistor mosfet n-ch drain current
    Text: R1242S SERIES 30V Input 3A Buck DC/DC converter NO.EA-191-091207 „ General Descriptions The R1242 is 30V input voltage Synchronous type Step down CMOS DC/DC converter. It contains Nch high side Tr. Typ. 100mΩ to make a simple step down DC/DC to supply maximum 3A output current. In terms of Low


    Original     		PDF R1242S EA-191-091207 R1242 Room403, Room109, nippon capacitors transistor mosfet n-ch drain current

    nippon capacitors

    Abstract: capacitors lx chemicon r1242
    Text: R1242S SERIES 30V Input 3A Buck DC/DC converter NO.EA-191-090928 General Descriptions The R1242 is 30V input voltage Synchronous type Step down CMOS DC/DC converter. It contains Nch high side Tr. Typ. 100mΩ to make a simple step down DC/DC to supply maximum 3A output current. In terms of Low


    Original     		PDF R1242S EA-191-090928 R1242 Room403, Room109, nippon capacitors capacitors lx chemicon

    TPCP8

    Abstract: Nippon capacitors GRM21BB11H104KA01L
    Text: R1242S SERIES 30V Input 3A Buck DC/DC converter NO.EA-191-100511 OUTLINE The R1242S Series are CMOS-based 30V Input, 3A, Synchronous Rectified Step-down DC/DC Converters with built-in Highside Switch. Each of these ICs contains Nch Highside Tr. Typ. 0.1Ω and can supply maximum


    Original     		PDF R1242S EA-191-100511 Room403, Room109, TPCP8 Nippon capacitors GRM21BB11H104KA01L

    Nippon capacitors

    Abstract: No abstract text available
    Text: R1242S SERIES 30V Input 3A Buck DC/DC converter NO.EA-191-130312 OUTLINE The R1242S Series are CMOS-based 30V Input, 3A, Synchronous Rectified Step-down DC/DC Converters with built-in Highside Switch. Each of these ICs contains Nch Highside Tr. Typ. 0.1Ω and can supply maximum


    Original     		PDF R1242S EA-191-130312 Room403, Room109, Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NBA084FP-M306L48 preliminary datasheet flow Boost0 600V/84A PS* Features flow0 12mm housing ● *PS: 2x84A parallel switch 75A IGBT and 99mΩ C6 ● ultrafast IGBT with C6 MOSFET and SiC buck diodes ● symmetric booster ● ultra fast switching frequency


    Original     		PDF 10-FZ06NBA084FP-M306L48 00V/84A 2x84A FZ06NBA084FP

    100A 1000V mosfet

    Abstract: mosfet vgs 5v mosfet 10a 800v N CHANNEL MOSFET 10A 1000V MOSFET 800V 10A POWER MOSFET Rise Time 1000V NS MOSFET 20V 100A 100A 1000V power mosfet 100A Mosfet MOSFET IGSS 100A
    Text: MOSFET MODULE SF100CB100 UL;E76102 M SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.


    Original     		PDF SF100CB100 E76102 SF100CB100 300ns 100A 1000V mosfet mosfet vgs 5v mosfet 10a 800v N CHANNEL MOSFET 10A 1000V MOSFET 800V 10A POWER MOSFET Rise Time 1000V NS MOSFET 20V 100A 100A 1000V power mosfet 100A Mosfet MOSFET IGSS 100A

    Solar Inverters

    Abstract: No abstract text available
    Text: 10-PZ12B2A040ME01-M330L63Y flow SOL0-SiC 1200 V / 40 mΩ Features TM ● Cree flow 0 12mm housing Silicon Carbide Power MOSFET TM ● Cree Silicon Carbide Power Schottky Diode ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors


    Original     		PDF 10-PZ12B2A040ME01-M330L63Y Solar Inverters

    4800 8pin mosfet

    Abstract: AC-DC Controllers DIH-143 Dionics DIH-126 DIH-127 DIH-128 DIH-129 DIH-134 DIH-135
    Text: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 PHOTOVOLTAIC SOLID STATE RELAYS Features: Applications: • Optical Isolation • Low Logic-Level Input Compatibility • Low On-Resistance


    Original     		PDF MIL-R-28750 DIH-1378 DIH-1380 DIH-126 DIH-127 DIH-128 DIH-129 DIH-136 DIH-149 DIH-169 4800 8pin mosfet AC-DC Controllers DIH-143 Dionics DIH-126 DIH-127 DIH-128 DIH-129 DIH-134 DIH-135

    IRF9389

    Abstract: No abstract text available
    Text: IRF9389PbF N-CH 30 V DS R DS on max 27 Qg (typical) 6.8 HEXFET Power MOSFET P-CH -30 64 8.1 V S1 m nC N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CHANNEL MOSFET ID (@TA = 25°C) 6.8 -4.6 A SO-8 Top View Applications l High and Low Side Switches for Inverter


    Original     		PDF IRF9389PbF EIA-481 EIA-541. D-020D IRF9389

    280N085

    Abstract: 98747 HiperFET Power MOSFETS IXFN SOT227
    Text: Advanced Technical Information IXFN 280N085 VDSS HiPerFETTM Power MOSFETs Single Die MOSFET ID25 RDS on trr ≤ 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C


    Original     		PDF 280N085 98747 HiperFET Power MOSFETS IXFN SOT227

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 70 V = 340 A = 4 mW < 250 ns G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 340N07 OT-227

    Untitled

    Abstract: No abstract text available
    Text: AP92LT10GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 100V RDS ON 6.5mΩ


    Original     		PDF AP92LT10GP-HF AP92LT10 O-220 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O I* t F O f lH D â tS Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 2.5V Driver Voltage p-channel MOSFETs Electrical Characteristics Maximum Ratings, T, = 25°C


    OCR Scan     		PDF O-220FN O-220 O-220S TQ-220S

    POWER MOSFET 4600

    Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
    Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X


    OCR Scan     		PDF 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90

    sml40m35jvr

    Abstract: No abstract text available
    Text: Illl Vrr r = mi SEM E SML40M35JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 400V 93A 0.035Q Faster Switching


    OCR Scan     		PDF SML40M35JVR OT-227 sml40m35jvr

    sml60m75jvr

    Abstract: No abstract text available
    Text: Illl Vrr r = mi SEM E SML60M75JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 600V 62A 0.075Q Faster Switching


    OCR Scan     		PDF SML60M75JVR OT-227 sml60m75jvr

    Untitled

    Abstract: No abstract text available
    Text: APT40M35JVR A dvanced P o w er Te c h n o lo g y 400V 93A 0.035Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT40M35JVR OT-227 APT40M35JVR MIL-STD-750 832nH. OT-227

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y APT60M75JVR 600V ' 62A 0.075Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT60M75JVR OT-227 APT60M75JVR MIL-STD-750 OT-227

    mj 1504

    Abstract: APT60M75JVR
    Text: w ^ p s s s ^ ^ ^ y t - ìA p T 6 o M Z à M Te c h n o l o g y ' P O W E R M 7 5 j v R 62a 6oov 0.0750 O S V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT60M75JVR OT-227 Conti-227 mj 1504 APT60M75JVR