ddr3
Abstract: intel-centrino J0876E60 DDR3 DIMM elpida DDR3 impedance 78-FBGA "DDR3 SDRAM" 78FBGA DDR3-800 ddr3 tsop
Text: DDR3 SDRAM DDR3 SDRAMDDR2 SDRAM、DDR SDRAMの比較 項 目 DDR3 SDRAM DDR2 SDRAM DDR SDRAM 転送速度 800/1066/1333/1600Mbps 400/533/667/800Mbps 200/266/333/400Mbps 400/533/667/800MHz (200/266/333/400MHz) (100/133/166/200MHz) 電源電圧 (VDD/VDDQ)
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800/1066/1333/1600Mbps
400/533/667/800Mbps
200/266/333/400Mbps
400/533/667/800MHz)
200/266/333/400MHz)
100/133/166/200MHz)
calibr876E60
00mmx13
20058DDR3
DDR3-1600/1333
ddr3
intel-centrino
J0876E60
DDR3 DIMM elpida
DDR3 impedance
78-FBGA
"DDR3 SDRAM"
78FBGA
DDR3-800
ddr3 tsop
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Untitled
Abstract: No abstract text available
Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M474B5173BH0
M474B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx72
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Untitled
Abstract: No abstract text available
Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:
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M2S1G64CBH4B5P
M2S2G64CB88B5N
M2S4G64CB8HB5N
PC3-8500
PC3-10600
PC3-12800
DDR3-1066/1333/1600
128Mx16
256Mx8
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ALLAYER COMMUNICATIONS
Abstract: gvrp AL1022 "address learning" disable 802.3 802.1d port AL126 AL3000 AL300A 00XXX1
Text: AL126 Revision 1.0 8-Port 10/100 Mbit/s Dual Speed Fast Ethernet Switch • • • • • • • • Supports eight 10/100 Mbit/s Ethernet ports with MII and RMII interface Capable of trunking up to 800 Mbit/s link with link fail-over Full- and half-duplex mode operation
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AL126
AL1022
AL3000
ALLAYER COMMUNICATIONS
gvrp
AL1022
"address learning" disable 802.3 802.1d port
AL126
AL300A
00XXX1
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k4b2g1646q
Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B2G1646Q
96FBGA
k4b2g1646q
ddr3 2133
K4B2G1646Q-BCK0
K4B2G1646Q-BCMA
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Untitled
Abstract: No abstract text available
Text: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B5173BH0
M471B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx64
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lsi 2108 iops
Abstract: LSI SAS 2108 LSI 1078 MegaRAID SAS 9260-8i iops "read channel" hdd lsi 8888ELP multipath SSD CONTROLLER AND CHIP SET
Text: MegaRAID Benchmark Tips January 27, 2010 Benchmark Review Requirements • Providing the following information will improve our ability to support product evaluations – Summary of test cases you will be performing – System details and benchmark parameters listed on slide 3
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96-ball FBGA
Abstract: No abstract text available
Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)
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EDJ1108EJBG
EDJ1116EJBG
EDJ1108EJBG)
EDJ1116EJBG)
78-ball
96-ball
1866Mbps/1600Mbps/1333Mbps
96-ball FBGA
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w3j128m72
Abstract: w3j512m72
Text: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES Address/control terminations included DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s Differential clock terminations included
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W3J512M72G-XPBX
W3J512M72G-XLBX
1600Mb/s
w3j128m72
w3j512m72
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Untitled
Abstract: No abstract text available
Text: W3J128M72K-XLBX W3J128M72K-XPBX *ADVANCED 1GB – 128M x 72 DDR3 SDRAM – 1.35V – 375 PBGA Multi-Chip Package FEATURES BENEFITS DDR3 Data Rate = 800; 1,066; 1,333; 1,600* Mb/s 35%* Space savings vs. FBGA Packages: Reduced part count
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W3J128M72K-XLBX
W3J128M72K-XPBX
1600Mb/s
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NT5CB256
Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800
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NT5CB512M8CN
NT5CB256M16CP
NT5CC512M8CN
NT5CC256M16CP
DDR3/L-1600-CL11
DDR3-1866-CL13
DDR3-2133-CL14
NT5CB256
NT5CC256M16CP-DI
NT5CB256M16
NT5CB256m
NT5CB512M8CN-DI
NT5CB256M16CP-DI
NT5CC512M8CN-DI
NT5CC512M8CN-DII
NT5CB256M16CP-EK
NT5CC512M8
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L9D3256M32SBG1
Abstract: No abstract text available
Text: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES Configuration: x/ '06%* 0HJ[[ 8 banks x/ '06%* 0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999
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L9D3256M32SBG1
L9D3512M32SBG1
256-512M
DDR3-1333
LDS-L9D3xxxM32SBG1
L9D3256M32SBG2I107
L9D3256M32SBG1
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Optical SAS QSFP
Abstract: Amphenol QSFP L77SDB25S1ACH4F U65B044010T MD5ML50S10 Amphenol 191-2801-110 Amphenol d 40 - e16a VCSEL array HDMI G38A71214AEU amphenol airbag
Text: Amphenol Amphenol Preferred Parts Catalogue Amphenol Corporation Amphenol was founded in 1932. Today the company is one of the largest manufacturers of interconnect products in the world serving towards 8 major markets: Aerospace/Military, Automotive, Broadband
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M22520/2-01
Optical SAS QSFP
Amphenol QSFP
L77SDB25S1ACH4F
U65B044010T
MD5ML50S10
Amphenol 191-2801-110
Amphenol d 40 - e16a
VCSEL array HDMI
G38A71214AEU
amphenol airbag
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TA 7698 AP
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:
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L9D3256M32SBG1
L9D3512M32SBG1
256-512M
F5478O54UDI3<
54Ogi
F5734O54UDI3<
86Ogi
3057X
/202897X1-203X
TA 7698 AP
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K4B4G0846C
Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446C
K4B4G0846C
78FBGA
K4B4G0846C
K4B4G0846C-BCMA
K4B4G0446C-BCK0
DDR3-1866
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K4B4G0846B-HYK0
Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
Text: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446B
K4B4G0846B
78FBGA
K4B4G0846B-HYK0
K4B4G0846B-HYH9
K4B4G0446B-HYK0
K4B4G0446B-HYH9
09 06 115 2932
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K4B4G0846a
Abstract: No abstract text available
Text: Rev. 1.11, Jan. 2011 K4B4G0446A K4B4G0846A 4Gb A-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B4G0446A
K4B4G0846A
78FBGA
K4B4G0846a
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D2618
Abstract: No abstract text available
Text: DDR3L SDRAM Registered DIMM DDR3L SDRAM Specification 240pin Registered DIMM based on 1Gb F-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
72-bit
78FBGA
med15
D2618
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k4b2g0446d-hyh9
Abstract: No abstract text available
Text: Rev. 1.01, Nov. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B2G0446D
K4B2G0846D
78FBGA
k4b2g0446d-hyh9
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k4b2g0846f
Abstract: K4B2G0846F-MY k4b2g0846 M392B5673FH0
Text: DDR3L SDRAM VLP Registered DIMM DDR3L SDRAM Specification 240pin VLP Registered DIMM based on 1Gb F-die 72-bit ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
72-bit
78FBGA
k4b2g0846f
K4B2G0846F-MY
k4b2g0846
M392B5673FH0
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hyundai rdram
Abstract: REF05
Text: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and
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HYRDU64164
HYRDU72184
64/72Mbit
600MHz
800MHz
Mar98
hyundai rdram
REF05
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MIG toshiba
Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
Text: TOSHIBA THMR1E16-6/-7/-8 TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E16 is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB and 8 TC59M718RB Direct Rambus DRAMs on a printed circuit board.
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THMR1E16-6/-7/-8
128M-word
600MHz
711MHz
800MHz
16cydes)
-16CSP
MIG toshiba
ABB B45
THMR1E16-6
THMR1E16-7
B75 ABB
hiab
837 B34
toshiba mig
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toshiba a75
Abstract: ejdalf
Text: TOSHIBA THMR1E8-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108.864-WORD BY 18-BIT 128M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E8 is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB Direct Rambus DRAMs on a printed circuit board.
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864-WORD
18-BIT
18-bit
TC59RM718MB
64M-wordXl8
600MHz
16cycles)
711MHz
toshiba a75
ejdalf
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,
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TC59R7218XB
72-Mbit
600MHz
800MHz
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