ddr3
Abstract: intel-centrino J0876E60 DDR3 DIMM elpida DDR3 impedance 78-FBGA "DDR3 SDRAM" 78FBGA DDR3-800 ddr3 tsop
Text: DDR3 SDRAM DDR3 SDRAMDDR2 SDRAM、DDR SDRAMの比較 項 目 DDR3 SDRAM DDR2 SDRAM DDR SDRAM 転送速度 800/1066/1333/1600Mbps 400/533/667/800Mbps 200/266/333/400Mbps 400/533/667/800MHz (200/266/333/400MHz) (100/133/166/200MHz) 電源電圧 (VDD/VDDQ)
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800/1066/1333/1600Mbps
400/533/667/800Mbps
200/266/333/400Mbps
400/533/667/800MHz)
200/266/333/400MHz)
100/133/166/200MHz)
calibr876E60
00mmx13
20058DDR3
DDR3-1600/1333
ddr3
intel-centrino
J0876E60
DDR3 DIMM elpida
DDR3 impedance
78-FBGA
"DDR3 SDRAM"
78FBGA
DDR3-800
ddr3 tsop
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Untitled
Abstract: No abstract text available
Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M474B5173BH0
M474B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx72
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Untitled
Abstract: No abstract text available
Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:
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M2S1G64CBH4B5P
M2S2G64CB88B5N
M2S4G64CB8HB5N
PC3-8500
PC3-10600
PC3-12800
DDR3-1066/1333/1600
128Mx16
256Mx8
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Untitled
Abstract: No abstract text available
Text: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B5173BH0
M471B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx64
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96-ball FBGA
Abstract: No abstract text available
Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)
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EDJ1108EJBG
EDJ1116EJBG
EDJ1108EJBG)
EDJ1116EJBG)
78-ball
96-ball
1866Mbps/1600Mbps/1333Mbps
96-ball FBGA
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NT5CB256
Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800
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NT5CB512M8CN
NT5CB256M16CP
NT5CC512M8CN
NT5CC256M16CP
DDR3/L-1600-CL11
DDR3-1866-CL13
DDR3-2133-CL14
NT5CB256
NT5CC256M16CP-DI
NT5CB256M16
NT5CB256m
NT5CB512M8CN-DI
NT5CB256M16CP-DI
NT5CC512M8CN-DI
NT5CC512M8CN-DII
NT5CB256M16CP-EK
NT5CC512M8
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L9D3256M32SBG1
Abstract: No abstract text available
Text: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999
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L9D3256M32SBG1
L9D3512M32SBG1
256-512M
DDR3-1333
LDS-L9D3xxxM32SBG1
L9D3256M32SBG2I107
L9D3256M32SBG1
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TA 7698 AP
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:
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L9D3256M32SBG1
L9D3512M32SBG1
256-512M
F5478O54UDI3<
54Ogi
F5734O54UDI3<
86Ogi
3057X
/202897X1-203X
TA 7698 AP
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Untitled
Abstract: No abstract text available
Text: Rev. 1.0, Nov. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B2873GB0
M471B5673GB0
204pin
78FBGA
K4B1G0846G
128Mbx8
256Mx64
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D2618
Abstract: No abstract text available
Text: DDR3L SDRAM Registered DIMM DDR3L SDRAM Specification 240pin Registered DIMM based on 1Gb F-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
72-bit
78FBGA
med15
D2618
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k4b2g0846f
Abstract: K4B2G0846F-MY k4b2g0846 M392B5673FH0
Text: DDR3L SDRAM VLP Registered DIMM DDR3L SDRAM Specification 240pin VLP Registered DIMM based on 1Gb F-die 72-bit ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
72-bit
78FBGA
k4b2g0846f
K4B2G0846F-MY
k4b2g0846
M392B5673FH0
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Untitled
Abstract: No abstract text available
Text: Rev. 1.01, Dec. 2010 M392B5773CH0 M392B5273CH0 M392B5270CH0 M392B1K70CM0 M392B1K73CM0 240pin VLP Registered DIMM based on 2Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M392B5773CH0
M392B5273CH0
M392B5270CH0
M392B1K70CM0
M392B1K73CM0
240pin
78FBGA
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DDR3-1866 RDIMM SPD JEDEC
Abstract: M392B5670GB0-CF8
Text: Rev. 1.01, Dec. 2010 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M392B2873GB0
M392B5673GB0
M392B5670GB0
240pin
78FBGA
256Mbx4
256Mx72
K4B1G0446G-BC*
DDR3-1866 RDIMM SPD JEDEC
M392B5670GB0-CF8
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M471B2873FHS
Abstract: M/samsung DDR3 SDRAM 2GB
Text: Unbuffered SoDIMM DDR3 SDRAM DDR3 SDRAM Specification 204pin Unbuffered SODIMM based on 1Gb F-die 64-bit Non-ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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204pin
64-bit
78FBGA
K4B1G0846F
128Mbx8
256Mx64
M471B5673FH0
M471B2873FHS
M/samsung DDR3 SDRAM 2GB
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M378B5273BH1-CF8
Abstract: samsung dimm DDR3 SPD M391B5273BH1-CF8 M378B5273BH
Text: DDR3 SDRAM Unbuffered DIMM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 2Gb B-die 64/72-bit Non-ECC/ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
64/72-bit
78FBGA
256Mbx8
512Mx64/x72
K4B2G0846B-HC
M378B5273BH1-CF8
samsung dimm DDR3 SPD
M391B5273BH1-CF8
M378B5273BH
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Untitled
Abstract: No abstract text available
Text: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B2873GB0
M471B5673GB0
204pin
78FBGA
K4B1G0846G
128Mbx8
256Mx64
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PC3-10600R-09-10-E1-P1
Abstract: PC3-10600R-09-10-E1-D2 M393B5170EH1-CH9 10600R M393B5170EH1 samsung DDR3 SDRAM 2GB raw card DDR3 PC3 10600R PC3-10600R-09-10-E1 DDR3 VLP Unbuffered DIMM
Text: May. 2010 DDR3 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
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DDR3 pcb layout
Abstract: DDR3 layout DDR3 DIMM 240 pin names DDR3 pcb layout motherboard DDR3 pcb design DDR3 DIMM 240 pin DIMM DDR3 signal assignments DDR3 timing diagram DDR3 DRAM layout DDR3 impedance
Text: Challenges in implementing DDR3 memory interface on PCB systems: a methodology for interfacing DDR3 SDRAM DIMM to an FPGA Phil Murray, Altera Corporation Feras Al-Hawari, Cadence Design Systems, Inc. CP-01044-1.1 February 2008 Undoubtedly faster, larger and lower power per bit, but just how do you go about
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CP-01044-1
DDR3 pcb layout
DDR3 layout
DDR3 DIMM 240 pin names
DDR3 pcb layout motherboard
DDR3 pcb design
DDR3 DIMM
240 pin DIMM DDR3 signal assignments
DDR3 timing diagram
DDR3 DRAM layout
DDR3 impedance
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DDR3 DIMM 240 pin names
Abstract: ELPIDA DDR3 1183H
Text: PRELIMINARY DATA SHEET 1GB Unbuffered DDR3 SDRAM DIMM EBJ10UE8BDF0 128M words x 64 bits, 1 Rank Specifications Features • Density: 1GB • Organization 128M words × 64 bits, 1 rank • Mounting 8 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ10UE8BDF0
240-pin
1600Mbps/1333Mbps/1066Mbps
M01E0706
E1514E10
DDR3 DIMM 240 pin names
ELPIDA DDR3
1183H
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Untitled
Abstract: No abstract text available
Text: 7 SERIES FPGAS KINTEX-7 FPGA KC705 EVALUATION KIT FU LL-FEATU R E D, POWE R-E FFICI E NT FPGA DESIG N PLATFOR M KINTEX-7 FPGA KC705 EVALUATION KIT: VERSATILE, HIGH-PERFORMANCE BASE PLATFORM SHORTENS TIME TO MARKET FOR 7 SERIES DESIGNS Design Challenges • Shortened schedules, reduced budgets,
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KC705
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samsung ddr3
Abstract: DDR3 DIMM 240 pinout DDR3-1066 DDR3-1333 K4B1G16 Design Guide for DDR3-1066 k4b1g08 K4B1G0846D K4B1G0446D DDR3-800-666
Text: 1Gb DDR3 SDRAM K4B1G04 08/16 46D 1Gb D-die DDR3 SDRAM Specification 82 / 100 FBGA with Pb-free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.
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K4B1G04
samsung ddr3
DDR3 DIMM 240 pinout
DDR3-1066
DDR3-1333
K4B1G16
Design Guide for DDR3-1066
k4b1g08
K4B1G0846D
K4B1G0446D
DDR3-800-666
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DDR3 DIMM 240 pinout
Abstract: M393B1K70CH0 K4B2G0846C-HC M393B2K70CM0-CF8 Design Guide for DDR3-1066 M393B1K73CH0-CF8 M393B1K70CH0-CF8 ddr3 RDIMM pinout K4B2G0446C K4B2G0446C-HC
Text: Rev. 1.0, Jan. 2010 M393B5773CH0 M393B5273CH0 M393B5270CH0 M393B1K70CH0 M393B1K73CH0 M393B2K70CM0 240pin Registered DIMM based on 2Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M393B5773CH0
M393B5273CH0
M393B5270CH0
M393B1K70CH0
M393B1K73CH0
M393B2K70CM0
240pin
78FBGA
DDR3 DIMM 240 pinout
M393B1K70CH0
K4B2G0846C-HC
M393B2K70CM0-CF8
Design Guide for DDR3-1066
M393B1K73CH0-CF8
M393B1K70CH0-CF8
ddr3 RDIMM pinout
K4B2G0446C
K4B2G0446C-HC
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M393B1K70DH0
Abstract: M393B5273DH0 k4b4g0446d M393B5270DH0 M393B5773DH0 M393B1K73DH0-YF8 M393B1K73DH0 ddr3l pcb design guide M393B2K70DM0 K4B2G0446D-HY
Text: Rev. 1.0, Sep. 2010 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M393B5773DH0
M393B5273DH0
M393B5270DH0
M393B1K70DH0
M393B1K73DH0
M393B2K70DM0
240pin
78FBGA
M393B1K70DH0
M393B5273DH0
k4b4g0446d
M393B5270DH0
M393B5773DH0
M393B1K73DH0-YF8
M393B1K73DH0
ddr3l pcb design guide
M393B2K70DM0
K4B2G0446D-HY
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Untitled
Abstract: No abstract text available
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004
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HY5RS573225F
8Mx32)
240ohm
240ohms
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