a51dc
Abstract: 161S-AA02NPK AA-04N 140-MN-1600 161S-AA03NPK TEMPERATURE CONTROLLER with pid AVR 140-MN 161S-AA01NPK 140-MN-1000 161S-AA07NPK
Text: Bulletin 161 Single Phase AC Drive 1~ / 200-240V 0.2 – 2.2 kW Bulletin 161 Table of contents 1. Checking the scope of supply. 1 2. Structure of the device. 2
|
Original
|
00-240V
a51dc
161S-AA02NPK
AA-04N
140-MN-1600
161S-AA03NPK
TEMPERATURE CONTROLLER with pid AVR
140-MN
161S-AA01NPK
140-MN-1000
161S-AA07NPK
|
PDF
|
2SC4618
Abstract: 2SC4098 2SC2058S 2SC2413K 2SC4997 2SC4998
Text: Transistors 2SC4997 / 2SC4998 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S SPEC-C131 (96-161-C26) 310
|
Original
|
2SC4997
2SC4998
2SC4618
2SC4098
2SC2413K
2SC2058S
SPEC-C131)
96-161-C26)
2SC2058S
2SC4998
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FemtoClock NG Differential-to-3.3V, ICS8N3PG10MBKI-161 2.5V LVPECL Synthesizer DATA SHEET General Description Features The ICS8N3PG10MBKI-161 is a very versatile programmable LVPECL synthesizer that can be used for OTN/SONET to Ethernet or 10GB Ethernet to OTN/SONET rate conversions. The conversion
|
Original
|
ICS8N3PG10MBKI-161
ICS8N3PG10MBKI-161
25MHz
1328125MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: User's Guide SLUU668 – March 2012 QFN-Packaged bq24160/161/162A/63EVM Evaluation Modules The bq24160/161/162A/63EVM evaluation module is a complete charger module for evaluating compact, flexible, high-efficiency, USB-friendly, switch-mode, charge-management solutions for single-cell, Li-ion
|
Original
|
SLUU668
bq24160/161/162A/63EVM
bq2416x
bq24160/161/163/168EVM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: User's Guide SLUU496A – December 2011 – Revised January 2012 WCSP-Packaged bq24160/161/163/168 Evaluation Modules The bq24160/161/163/168 evaluation module is a complete charger module for evaluating compact, flexible, high-efficiency, USB-friendly, switch-mode charge management solution for single-cell, Li-ion and
|
Original
|
SLUU496A
bq24160/161/163/168
bq2416x
|
PDF
|
TIP162
Abstract: automotive ignition tip162 TIP160 TIP161 npn DARLINGTON 10A tip162 to-3p
Text: Inchange Semiconductor Product Specification TIP160/161/162 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・DARLINGTON ・10A rated continuous collector current APPLICATIONS ・For use in automotive ignition,switching and motor control applications
|
Original
|
TIP160/161/162
TIP160
TIP161
TIP162
TIP162
automotive ignition tip162
TIP160
TIP161
npn DARLINGTON 10A
tip162 to-3p
|
PDF
|
automotive ignition tip162
Abstract: TIP162 TIP160 DARLINGTON 10A TIP161 tip162 to-3p
Text: SavantIC Semiconductor Product Specification TIP160/161/162 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·10A rated continuous collector current APPLICATIONS ·For use in automotive ignition,switching and motor control applications
|
Original
|
TIP160/161/162
TIP160
TIP161
TIP162
automotive ignition tip162
TIP162
TIP160
DARLINGTON 10A
TIP161
tip162 to-3p
|
PDF
|
TB62752AFUG
Abstract: TA4401CT TB7001FL TOSHIBA RF Power Module
Text: TOSHIBA SEMICONDUCTOR BULLETIN EYE December 2005 VOLUME 161 CONTENTS New Products White LED Driver IC .2 SiGe Power Amplifier for 1.9GHz to 2.5GHz Wireless Applications.3
|
Original
|
TB62752AFUG
TB62752AFUG
TA4401CT
TB7001FL
TOSHIBA RF Power Module
|
PDF
|
nj TRANSISTOR
Abstract: No abstract text available
Text: NEW 3mm Infrared Discrete LED Silicon PNP Photo Transistor Dialight 521-9740 Features 5.18 [.204] 4.09 [.161] .79 [.031] .61 [.024] SQ. .71 [.028] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability
|
Original
|
MIL-STD-202E,
nj TRANSISTOR
|
PDF
|
BC160
Abstract: BC160-10 BC160-6 BC161-6 BC160-16 BC161 BC161-10 BC161-16
Text: BC160, 161 PNP Medium Power Transistors Features: • PNP Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. TO-39 Metal Can Package Dimension Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88
|
Original
|
BC160,
BC160
BC161
BC160
BC160-10
BC160-6
BC161-6
BC160-16
BC161
BC161-10
BC161-16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Ron = 304 m max (@VGS = 1.5 V) Ron = 211 m (max) (@VGS = 1.8 V) Ron = 161 m (max) (@VGS = 2.5 V)
|
Original
|
SSM3K122TU
|
PDF
|
SSM3K122TU
Abstract: No abstract text available
Text: SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Ron = 304 mΩ max (@VGS = 1.5 V) Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V)
|
Original
|
SSM3K122TU
SSM3K122TU
|
PDF
|
SSM3K122TU
Abstract: No abstract text available
Text: SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Ron = 304 mΩ max (@VGS = 1.5 V) Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V)
|
Original
|
SSM3K122TU
SSM3K122TU
|
PDF
|
TRANSISTOR BC 157
Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
Text: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as
|
OCR Scan
|
23SbOS
BC160
Q62702-C228
Q62702-C228-V6
Q62702-C228-V10
Q62702-C228-V16
Q62702-C228-P
160/BC140
Q62702-C228-S2
BC1611>
TRANSISTOR BC 157
BC181
transistor bc160
TRANSISTOR "BC 157"
transistor 2sc 1586
transistor BC 55
transistor BC SERIES
f15n
transistor bc 102
BC161 transistor
|
PDF
|
|
|
bc 141
Abstract: BC160
Text: BC 160 BC 161 SI LI CON PLANAR NPN GENERAL PURPOSE TRANSISTORS The BC160 and BC 161 are silico n planar epitaxial PNP transistors in TO -39 metal case. They are p a rticularly designed fo r audio am p lifie rs and sw itching applications up to 1 A. The com plem entary NPN types are the BC 140 and EIC141.
|
OCR Scan
|
BC160
bc 141
|
PDF
|
decodeur
Abstract: tda 1025 demodulateur tda1057 regulateur de tension tda 1057 "PAL Decoder" modulateur de couleur 8A35
Text: CB-179 T0-116 CB-161 CB-2 T.V. R ad io (continued) Radio T. V. (suite) A pplication s Ap plicatio n s Type Type S uffix Suffixe Case B oîtie r 2 CB-161 Temperature compensated fixed voltage regulator Régulateur de tension fixe com pensé en température
|
OCR Scan
|
CB-161
CB-179
O-116
decodeur
tda 1025
demodulateur
tda1057
regulateur de tension
tda 1057
"PAL Decoder"
modulateur de couleur
8A35
|
PDF
|
BC 160
Abstract: transistor bc icbo nA npn BC141 BC161 BC Transistors
Text: BC 160 BC 161 SILICON PLANAR NPN GENERAL PURPOSE TRANSISTORS T he BC 160 and B C 161 a re s ilic o n p la n a r e p ita x ia l PNP tra n s is to rs in T O -3 9 m étal case. T h e y are p a rtic u la rly d e s ig n e d fo r a u d io a m p lifie rs a nd s w itc h in g a p p lic a tio n s
|
OCR Scan
|
BC161
BC141.
BC 160
transistor bc icbo nA npn
BC141
BC Transistors
|
PDF
|
1AJ5
Abstract: No abstract text available
Text: SIEMENS bfp 161 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration
|
OCR Scan
|
900MHz
Q62702-F1271
OT-143
1AJ5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bbS3T31 OQEbOSfi 161 H A P X Philips Semiconductors NPN general purpose transistor 2PD602; 2PD602A N AUER PHILIPS/DISCRETE FEATURES Objective specification b?E J> PIN CONFIGURATION • Large collector current • Low collector-emitter saturation voltage. DESCRIPTION
|
OCR Scan
|
bbS3T31
2PD602;
2PD602A
2PB710
2PB710A
2PD602Q:
2PD602R:
2PD602S:
2PD602AQ:
2PD602
|
PDF
|
BC160
Abstract: bc 160 BC161 TFK BC TFK 175 TFK 236 bc 141
Text: ip ^ B C 160- BC 161 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: Features: • Verlustleistung 3,2 W • Power dissipation 3.2 W
|
OCR Scan
|
|
PDF
|
2sa1161
Abstract: No abstract text available
Text: 2SA1161 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE 2 S A 1 161 Unit in mm HIGH SPEED SWITCHING APPLICATIONS. VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. 5.1 MAX. , 0.55M A X . MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage
|
OCR Scan
|
2SA1161
SC-43
--j50
2sa1161
|
PDF
|
AD162
Abstract: AD161 ad 162 AD 161 valvo transistoren valvo AD-161 germanium transistoren ScansUX7 ad161ad
Text: AD 162 GERMANIUM - PNP - NF - LEISTUNGSTRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, mit AI 161 als komplementäres Paar Mechanische Daten: GehKuse: Metal1 9 A 2 nach DIN 41875 Der Kollektor ist mit dem Metal1gehäuse 1e itend verbunden.
|
OCR Scan
|
|
PDF
|
2SA1161
Abstract: No abstract text available
Text: TOSHIBA 2SA1161 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE 2 S A 1 161 HIGH SPEED SWITCHING APPLICATIONS. VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 5.1 MAX. , 0.55M A X . MAXIMUM RATINGS Ta = 25°C SYMBOL RATING UNIT Collector-Base Voltage
|
OCR Scan
|
2SA1161
SC-43
2SA1161
|
PDF
|
3e tRANSISTOR
Abstract: TPV-376 GDD0055
Text: GAE GREAT AMERICAN ELECTROINCS TPV-376 Silicon NPN power transistor TPV-376 is designed for Class A Band III TV transmitter and transposer applications with common amplifier channel for signals of picture and sound . 30 Watt 170-230 Mhz 28 V SOT-161 (6 lead)
|
OCR Scan
|
TPV-376
TPV-376
OT-161
28/Ic
GDD0055
3e tRANSISTOR
|
PDF
|
