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    TURCK Inc P-WSV WKV 40-162-5M (ALTERNATE: U-01791)

    Process Automation, Cordset, P-WSV WKV 40-162-5M | Turck P-WSV WKV 40-162-5M
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    RS P-WSV WKV 40-162-5M (ALTERNATE: U-01791) Bulk 12 Weeks 1
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    TURCK Inc P-RSV RKV 40-162-5M (ALTERNATE: U-01575)

    Process Automation, Cordset, P-RSV RKV 40-162-5M | Turck P-RSV RKV 40-162-5M
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    RS P-RSV RKV 40-162-5M (ALTERNATE: U-01575) Bulk 12 Weeks 1
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    1625MA Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM7179-6F -46dBc FLM7179-6F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM6472-6F -46dBc FLM6472-6F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 27.5dBm • Broad Band: 6.4 to 7.2GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		PDF FLM6472-6F -46dBc 50ohm FLM6472-6F 25deg

    Untitled

    Abstract: No abstract text available
    Text: FLM7185-6 F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.0dBm Typ. • High Gain: G1dB = 8.0dB (Typ.) • High PAE: hadd = 30% (Typ.) • Low IM3 = -45dBc@Po = 27.0dBm • Broad Band: 7.1 to 8.5GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		PDF FLM7185-6 -45dBc 50ohm FLM7185-6F 25deg 25deatched

    27.5dbm ,GaAs FET

    Abstract: FLM7179-6F
    Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-6F -46dBc FLM7179-6F 27.5dbm ,GaAs FET

    FLM5964-6F

    Abstract: No abstract text available
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5964-6F -46dBc FLM5964-6F

    Untitled

    Abstract: No abstract text available
    Text: Deutronicstr. 5, D - 84166 Adlkofen Tel: +49 0 8707 920-199, Fax: +49 (0) 8707 1004 E-Mail: sales@deutronic.com http://www.deutronic.com E15W geregelter DC/DC Wandler; Weitbereichseingang 2:1 regulated DC/DC converter; wide range input 2:1 Weitbereichseingang 2:1


    Original     		PDF 500VDC E15W12R3 E15W12R5C E15W12R12C E15W12R15C E15W12R5-5Cen,

    NCR18650B

    Abstract: NCR18650B1S
    Text: Lithium ion Rechargeable battery Cell Type NCR18650B Specifications Rated Capacity at 20℃ Min.3200mAh Min.3250mAh Nominal Capacity (at 25℃) Typ.3350mAh Nominal Voltage Charging Method Charging Voltage Charging Current Charging Time Ambient Temperature


    Original     		PDF NCR18650B 3200mAh 3250mAh 3350mAh 2G23X0KYKU 1625mA 676Wh/l 243Wh/kg NCR18650B NCR18650B1S

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM5964-6F -46dBc FLM5964-6F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM6472-6F -46dBc FLM6472-6F

    3205 FET

    Abstract: FET 3205
    Text: FLM7185-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.0dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -45dBc@Po = 27.0dBm Broad Band: 7.1 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7185-6F -45dBc FLM7185-6F 3205 FET FET 3205

    FLM6472-6F

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM6472-6F -46dBc FLM6472-6F FCSI0598M200

    M R Multitronik

    Abstract: No abstract text available
    Text: 15 Watt 2x2 Inch Case A & D 2:1 Input Range Ultra Low Profile o Wide Input Range o Pi Input Filter o Short Circuit Protection Current Limit o Regulated Output o Single & Dual Output o Option Conductive EMI/RFI Meet EN55022 Class B OUTPUT VOLTAGE OUTPUT CURRENT


    Original     		PDF EN55022 15ARS12W3 15ARS12W5LC 3000mA 1250mA 1660mA 15ARS12W12LC 12VDC M R Multitronik

    Untitled

    Abstract: No abstract text available
    Text: Deutronicstr. 5, D - 84166 Adlkofen Tel: +49 0 8707 920-199, Fax: +49 (0) 8707 1004 E-Mail: sales@deutronic.com http://www.deutronic.com E15W geregelter DC/DC Wandler; Weitbereichseingang 2:1 regulated DC/DC converter; wide range input 2:1 Weitbereichseingang 2:1


    Original     		PDF 500VDC E15W12R3 E15W12R5C E15W12R12C E15W12R15C E15W12R5-5en,

    VCDB15-D12-S5

    Abstract: VCDB15-D12-S12 VCDB15 VCDB15-D12-S3R3
    Text: rev. page 1 of 3 date 08/2007 DESCRIPTION: DC/DC converter PART NUMBER: VCDB15 series features • 15W isolated output ·2:1 input range ·efficiency to 82% ·200 KHz switching frequency ·six-sided shield ·regulated outputs ·Pi input filter ·continuous short circuit protection


    Original     		PDF VCDB15 EN55022 VCDB15-D12-S3R3 VCDB15-D12-S5 VCDB15-D12-S12 VCDB15-D12-S15 VCDB15-D12-D12 VCDB15-D12-D15 VCDB15-D12-D5 VCDB15-D24-S3R3 VCDB15-D12-S5 VCDB15-D12-S12 VCDB15-D12-S3R3

    15ARS24W5LC

    Abstract: 15ARD12W12LC 15ARD12W5LC 15ARS12W12LC 283mA M R Multitronik M R Multitronik GmbH
    Text: 15 Watt 2x2 Inch Case A & D 2:1 Input Range Ultra Low Profile o Wide Input Range o Pi Input Filter o Short Circuit Protection Current Limit o Regulated Output o Single & Dual Output o Option Conductive EMI/RFI Meet EN55022 Class B INPUT CURRENT MODEL NUMBER


    Original     		PDF EN55022 15ARS12W3 3000mA 15ARS12W5LC 1250mA 1660mA 15ARS12W12LC 12VDC 15ARS24W5LC 15ARD12W12LC 15ARD12W5LC 15ARS12W12LC 283mA M R Multitronik M R Multitronik GmbH

    417-116

    Abstract: FLM5964-6F 26dBm
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5964-6F -46dBc FLM5964-6F 417-116 26dBm

    Ocean 477

    Abstract: FET transistors with s-parameters FLM7179-6F
    Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-6F -46dBc FLM7179-6F Ocean 477 FET transistors with s-parameters

    Untitled

    Abstract: No abstract text available
    Text: FLM7185-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.0dBm Typ. • High Gain: G1dB = 8.0dB (Typ.) • High PAE: hadd = 30% (Typ.) • Low IM3 = -45dBc@Po = 27.0dBm • Broad Band: 7.1 to 8.5GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		PDF FLM7185-6F -45dBc 50ohm FLM7185-6F 25deg

    FET 3205

    Abstract: FLM7185-6F
    Text: FLM7185-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.0dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -45dBc@Po = 27.0dBm Broad Band: 7.1 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7185-6F -45dBc FLM7185-6F FET 3205

    FLM6472-6F

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM6472-6F -46dBc FLM6472-6F

    Untitled

    Abstract: No abstract text available
    Text: FLM7185-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 27.0dBm Broad Band: 7.1 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7185-6F -45dBc FLM7185-6F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm


    OCR Scan     		PDF FLM6472-6F -46dBc FLM6472-6F FCSI0598M200

    cq 838

    Abstract: FLM7179-6F CQ 539
    Text: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF -46dBc FLM7179-6F FLM7179-6F FCSI0598M200 cq 838 CQ 539