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    166FT Search Results

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    166FT Price and Stock

    L-com Inc PPA00016-6FT

    NEMA L6-20P TO C15 POWER CORD, 1
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    DigiKey PPA00016-6FT Bag 1
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    Newark PPA00016-6FT Bulk 12 1
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    RS PPA00016-6FT Bulk 3 Weeks 1
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    L-com Inc LCCA30166-FT4

    COAX CBL SMA TO SMA
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    DigiKey LCCA30166-FT4 Bag 1
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    Newark LCCA30166-FT4 Bulk 1
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    RS LCCA30166-FT4 Bulk 3 Weeks 1
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    L-com Inc LCCA30166-FT3

    COAX CBL SMA TO SMA
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    DigiKey LCCA30166-FT3 Bag 1
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    Newark LCCA30166-FT3 Bulk 1
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    RS LCCA30166-FT3 Bulk 3 Weeks 1
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    L-com Inc LCCA30166-FT5

    COAX CBL SMA TO SMA
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    DigiKey LCCA30166-FT5 Bag 1
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    Newark LCCA30166-FT5 Bulk 1
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    RS LCCA30166-FT5 Bulk 3 Weeks 1
    • 1 $47.59
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    L-com Inc LCCA30166-FT2

    COAX CBL SMA TO SMA
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    DigiKey LCCA30166-FT2 Bag 1
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    Newark LCCA30166-FT2 Bulk 1
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    RS LCCA30166-FT2 Bulk 3 Weeks 1
    • 1 $42.99
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    • 100 $37.36
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    166FT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: mosaic 512Kx 32 SRAM MODULE semiconductor, inc. SYS32512ZK/LK - 020/025/30/35 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS32512ZK/LK is plastic 16Mbit Static RAM Module housed in a 72 pin plastic SIMM, ZIP


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    512Kx SYS32512ZK/LK 16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical


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    P4C1981 /P4C1981L, P4C1982/P4C1982L l2/l5/20/25ns 20/25/35/45/55ns P4C1981L/1982L P4C1981/L P4C1982/L P4C1981/82 P4C1981L/82L PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) ■ Low Power operation (Commercial) - 715 mW Active -10/12 - 550 mW Active - 15/20/25


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    P4C148, P4C149 P4C148 P4C148 -P4C149 18-Pin 096-bit PDF

    TI07

    Abstract: um61256fs 15 UM61256Fs TAG 203-500
    Text: ADE-203-500 Z HB66D6464BA Series 32k x 64-bit Synchronous Fast Static RAM Module with TAG, Burst Counter and Pipelined Data Output Prelimimary Rev. 0.0 HITACHI D ecem ber 29, 1995 Description The HB66D6464BA has been developed as an optimized • Internal input registers (address, data, control)


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    ADE-203-500 64-bit HB66D6464BA HM62D3232FP) 256Kbit UM61256FS TI07 um61256fs 15 TAG 203-500 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS j j - FEATURES • Full CMOS, 6T Cell ■ Single 5V+10% Power Supply ■ High Speed (Equal Access and Cycle Times)


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    P4C116/P4C116L P4C116L St4C116/L P4C116L P4C116 Mil-Bul-103 -12PC -12SC -12JC -12DC PDF

    A7153

    Abstract: No abstract text available
    Text: P E R F O R MA N C E SEMI CONDUCTOR 50E D • TOhEST? 0001230 P3C3164 SUPER FAST 8K X 8 STATIC CMOS RAMS SCRAMS 3 ■ PIRHLBIMIBMA1V ^ _ ■ 2$ - FEATURES ■ Single 3.3V + 0.2V Pow er Supply fo r High Speed w ith Low Noise and Low Pow er Dissipation ■


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    P3C3164 P3C3164L IL-STD-883C P3C3198 -15PC -15JC -15DC -15LC -15DMB -15LMB A7153 PDF

    Untitled

    Abstract: No abstract text available
    Text: mosaic 128Kx B SRAM MSM8128X-020/25/35 semiconductor, inc. Issue 4 .2 : June 1996 Description 131,072 x 8 CMOS High Speed Static RAM Features The MSM8128X is a 1Mbit monolithic SRAM organised as 128K X 8 with access times of 20ns to 35ns. This is available in 2 ceramic


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    128Kx MSM8128X-020/25/35 MSM8128X MIL-STD-883 MSM8128SXLMB-35 MIL-STD-883 PDF

    OC37

    Abstract: No abstract text available
    Text: P relim in ary HB66D6464BB Series 64K x 64 bits Synchronous Fast Static RAM Module with TAG, Burst Mode Selectable, Single Cycle Disable and Pipelined Data Output H ITA CH I So0,0,«* D e sc rip tio n The H B 6 6D 646 4B B has been developed as an optim ized cache m em o ry solution for 8 Bytes


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    HB66D6464BB 61256F penalizing454-0044 BP7/496/500/ABC/MGK PMMSDTD005Q2 OC37 PDF

    sem 2105

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR 20E J> • 70^55^7 OOOOt.51 2 ■ T -V 6 -3 M O P4C1982/P4C1982L, P4C1981 /P4C1981L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS A -


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    P4C1982/P4C1982L, P4C1981 /P4C1981L P4C1981/L P4C1982/L -15PC -15JC -15CC -15LC -17PC sem 2105 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports ■ High Speed Equal Access and Cycle Times - 12/15/20/25ns (Commercial) - 20/25/35ns (P4C168 Military) Three Options - P4C168 Low Power Standby Mode


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    P4C168, P4C169, P4C170 12/15/20/25ns 20/25/35ns P4C168 P4C169 P4C170 P4C168 PDF

    Untitled

    Abstract: No abstract text available
    Text: P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V Power Supply High Speed Equal Access and Cycle Times — 12/15/20/25 ns (Commercial) — 15/20/25 ns (Industrial) Low Power — 360 mW Active Single 3.3 Volts ±0.3Volts Power Supply


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    P3C1256 32Kx8. -12PC -12JC -15PC -15JC -15PI -15JI -20PC PDF

    15811

    Abstract: lz 53s 158111
    Text: PERFORMANCE SEMICONDUCTOR 20E D TGbEST? OOG154b 7 P3G3198/P3C3198L SUPER FAST 16Kx 4 STATIC CMOS RAMS SCRAMS P R E L IM IN A R Y T - U - H - i o FEATURES • Full CMOS, 6T Cell ■ Single 3.3V ± 0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation


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    OOG154b P3G3198/P3C3198L T-H-33 Active-12 Active-20 P3C3198L MIL-STD-883C P3C3198 -12PC -12JC 15811 lz 53s 158111 PDF

    t523

    Abstract: DD01 P4C148 P4C149 433 M SDE Contactor
    Text: PERFORMANCE SEMICONDUCTOR 50E D • 7GbBSt17 OOGlTTb 7 4 3 « P S C P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS SCRAMS FEATURES ■ Two Options - P4C148 Low Power Standby Mode -P4C149 Fast Chip Select Control ■ Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times)


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    P4C148, P4C149 7GbBS17 P4C148 P4C148 -P4C149 18-Pin P4C149 t523 DD01 433 M SDE Contactor PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM x i- FEATURES • High Speed Equal Access and Cycle Times — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) ■ Single 5 Volts ±10% Power Supply


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    P4C1024 576-bit 128Kx8. -15P3C -17P3C -20P3C -25P3C PDF