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    1685 TRANSISTOR Search Results

    1685 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1685 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 1685 transistor

    Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
    Text: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors


    Original     		PDF PH1617-60 PH1617-60 1615MHz 1685MHz c 1685 transistor 1685 transistor transistor c 1685 1615mhz

    Untitled

    Abstract: No abstract text available
    Text: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system


    Original     		PDF PH1617-60 -28dBc

    transistor Common emitter configuration

    Abstract: PH1617-60
    Text: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system


    Original     		PDF PH1617-60 -28dBc transistor Common emitter configuration PH1617-60

    MAX108

    Abstract: MAX1080 MAX1080ACUP MAX1080AEUP MAX1080BCUP MAX1081
    Text: 19-1685; Rev 0; 5/00 300ksps/400ksps, Single-Supply, Low-Power, 8-Channel, Serial 10-Bit ADCs with Internal Reference The 4-wire serial interface connects directly to SPI /QSPI™ and MICROWIRE™ devices without external logic. A serial strobe output allows direct connection to


    Original     		PDF 300ksps/400ksps, 10-Bit TMS320-family MAX1080/ MAX1081 MAX1080/MAX1081 MAX1080/MAX1081 MAX108 MAX1080 MAX1080ACUP MAX1080AEUP MAX1080BCUP

    Untitled

    Abstract: No abstract text available
    Text: 19-1685; Rev 0; 5/00 300ksps/400ksps, Single-Supply, Low-Power, 8-Channel, Serial 10-Bit ADCs with Internal Reference The 4-wire serial interface connects directly to SPI /QSPI™ and MICROWIRE™ devices without external logic. A serial strobe output allows direct connection to


    Original     		PDF 300ksps/400ksps, 10-Bit MAX1080/MAX1081 MAX1080 MAX1081 MAX1080/MAX1081

    VoltageControlled Voltage Source

    Abstract: DIODE MARK G7 Mark Alexander
    Text: Application Note 1685 Author: Jian Wang and Tamara Schmitz Development of a Voltage Feedback Spice Op-Amp Macromodel Introduction The Input Stage A voltage-feedback amplifier macromodel has been developed that simulates the most common effects, such as transient


    Original     		PDF ISL28133 AN-138 AN-840 AN1685 VoltageControlled Voltage Source DIODE MARK G7 Mark Alexander

    Untitled

    Abstract: No abstract text available
    Text: 19-1685; Rev 0; 5/00 300ksps/400ksps, Single-Supply, Low-Power, 8-Channel, Serial 10-Bit ADCs with Internal Reference The 4-wire serial interface connects directly to SPI /QSPI™ and MICROWIRE™ devices without external logic. A serial strobe output allows direct connection to


    Original     		PDF 300ksps/400ksps, 10-Bit TMS320-family MAX1080/ MAX1081 MAX1080/MAX1081 MAX1080/MAX1081

    SY10EP51V

    Abstract: SY10EP51VKI SY10EP51VKITR SY10EP51VZI SY10EP51VZITR
    Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V FINAL DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143


    Original     		PDF SY10EP51V 320ps SY10EP51V EP51V HEP51V SY10EP51VKI SY10EP51VKITR SY10EP51VZI SY10EP51VZITR

    Untitled

    Abstract: No abstract text available
    Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143


    Original     		PDF 320ps SY10EP51V EP51V HEP51V HEP51V SY10EP51V

    Untitled

    Abstract: No abstract text available
    Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143


    Original     		PDF 320ps SY10EP51V SY10EP51V EP51V HEP51V HEP51V

    Untitled

    Abstract: No abstract text available
    Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK ECL Pro SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143


    Original     		PDF 320ps SY10EP51V EP51V HEP51V HEP51V SY10EP51V

    transistor to1a

    Abstract: to1a to1a transistor WS7805 15A Voltage Regulators to18v WS7805CV WS7805DP
    Text: POSITIVE-VOLTAGE REGULATORS WS7805 ! 3-Termainal Regulators TO-252 ! Output Current Up to 1.5 A WS7805DP ! No External Components ! Internal Thermal Overload Protection ! High Power Dissipation Capability ! Internal Shot-Circuit Current Limiting ! Output Transistor Safe-Area


    Original     		PDF WS7805 O-252 WS7805DP O-252) O-220 WS7805CV transistor to1a to1a to1a transistor WS7805 15A Voltage Regulators to18v WS7805CV WS7805DP

    KPT24

    Abstract: MC100EPT24 MC100EPT24D MC100EPT24DR2
    Text: MC100EPT24 LVTTL/LVCMOS to Differential LVECL Translator The MC100EPT24 is a LVTTL/LVCMOS to differential LVECL translator. Because LVECL levels and LVTTL/LVCMOS levels are used, a –3.3V, +3.3V and ground are required. The small outline 8–lead SOIC package and the single gate of the EPT24 makes it ideal


    Original     		PDF MC100EPT24 MC100EPT24 EPT24 350ps r14525 MC100EPT24/D KPT24 MC100EPT24D MC100EPT24DR2

    XNOR GATE

    Abstract: data sheet for 3 input xor gate HP08 SY10EP08V SY10EP08VKI SY10EP08VKITR SY10EP08VZI SY10EP08VZITR
    Text: 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR FEATURES SY10EP08V FINAL DESCRIPTION • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE


    Original     		PDF SY10EP08V 200ps SY10EP08V EP08V SY10EP08VKITR* XNOR GATE data sheet for 3 input xor gate HP08 SY10EP08VKI SY10EP08VKITR SY10EP08VZI SY10EP08VZITR

    SY10EP05V

    Abstract: SY10EP05VKI SY10EP05VKITR SY10EP05VZI SY10EP05VZITR HP05
    Text: 5V/3.3V DIFFERENTIAL AND/NAND FEATURES SY10EP05V FINAL DESCRIPTION • ■ ■ ■ 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE


    Original     		PDF SY10EP05V 180ps SY10EP05V EP05V SY10EP05VKITR* SY10EP05VKI SY10EP05VKITR SY10EP05VZI SY10EP05VZITR HP05

    k8 marking transistor

    Abstract: HP05
    Text: 5V/3.3V DIFFERENTIAL AND/NAND SY10EP05V FINAL FEATURES • ■ ■ ■ 3.3V or 5V power supply options 180ps typical propagation delay Maximum frequency >3GHz typical Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE


    Original     		PDF 180ps SY10EP05V EP05V HEP05V SY10EP05V k8 marking transistor HP05

    Untitled

    Abstract: No abstract text available
    Text: 5V/3.3V DIFFERENTIAL 2-INPUT XOR/XNOR SY10EP08V FINAL FEATURES • ■ ■ ■ 3.3V or 5V power supply options Maximum frequency > 3GHz typical 200ps typical propagation delay Internal input resistors: pulldown on D, pulldown and pullup on /D ■ Q output will default LOW with inputs open or at VEE


    Original     		PDF SY10EP08V 200ps EP08V HEP08V SY10EP08V

    UU15

    Abstract: tic 260 PH1617-60 "Power TRANSISTOR"
    Text: PH1617-60 M/A-OOM Wireless Power Transistor 60 Watts, 1615- 1685 MHz = & Microwave Products Outline Drawing1 Description M/A-COM’s PH1617-60 is a silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1615 to 1685 MHz range. This


    OCR Scan     		PDF PH1617-60 PH1617-60 TT50M5QA 11Bt- 1685MHz 1615MHz 1685MHz UU15 tic 260 "Power TRANSISTOR"

    2SD444

    Abstract: No abstract text available
    Text: I O rd e rin g n u m b e r EN 3200 iSA%YO 2SA1685/2SC4443 No.3200 PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • Fast switching speed • High gain-bandwidth product • Low saturation voltage : 2SA1685 A bsolute M axim um R atings at Ta = 25°C


    OCR Scan     		PDF 2SA1685/2SC4443 2SA1685 1685/2SC4443 2SD444

    2SD444

    Abstract: 08TI 2SA1685 2SC4443 C4443 M685
    Text: O rd e rin g n u m b e r: EN 3200 2SA1685/2SC4443 No.3200 SMIYO PNP/NPN Epitaxial Planar Silicon Transistors i High-Speed Switching Applications F e a tu re s • Fast switching speed • High gain-bandwidth product •Low saturation voltage : 2SA1685


    OCR Scan     		PDF 2SA1685/2SC4443 2SA1685 2SD444 08TI 2SA1685 2SC4443 C4443 M685

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF 900MHz Q62702-F1491 OT-323 fl235bGS D1220Ã

    2SC5187

    Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
    Text: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller


    OCR Scan     		PDF 250mm 2SA1883 2SC4987 2SA1763 SC4452 2SC4443 2SA1764 2SC4453 2SC4168 2SA1728 2SC5187 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y

    Toggle flip flop IC

    Abstract: flip flop 945 flip flop j k
    Text: MOTOROLA Order this document by MC10EP35/D SEMICONDUCTOR TECHNICAL DATA Product Preview MC10EP35 «IK Flip Flop The M C10EP35 is a higher speed/low voltage version of the EL35 JK flip flop. The J/K data enters the master portion of the flip flop when the clock is LOW and is transferred to the slave, and thus the outputs, upon a


    OCR Scan     		PDF MC10EP35/D C10EP35 300ps MC10EP35 Toggle flip flop IC flip flop 945 flip flop j k

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MC10EP33/D SEM ICONDUCTO R TECHNICAL DATA Product Preview ~ M C 10EP33 4 D ivider The MC10EP33 is an integrated + 4 divider. The differential clock inputs and the V b b allow a differential, single-ended or AC coupled interface to the device. If used, the V b b output should be bypassed to


    OCR Scan     		PDF MC10EP33/D 10EP33 MC10EP33 440ps