169 MHZ RF CHIP Search Results

169 MHZ RF CHIP Result Highlights (5)

Part	Manufacturer	Description
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
GCM188D70E226ME36D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for Automotive
GRM022C71A472KE19L	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM033C81A224KE01W	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose

169 MHZ RF CHIP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CC1200 Low Power, High Performance RF Transceiver Applications Low power, high performance, wireless systems with 1 to 1000 kbit/s data rate 169 / 433 / 868 / 915 / 920 MHz ISM/SRD bands Possible support for additional frequency bands: 137 – 160, 205 – 240 and 274 – 320 MHz	Original	CC1200 CFR47 STD-T30,	PDF
Untitled Abstract: No abstract text available Text: CC1200 Low Power, High Performance RF Transceiver Applications Low power, high performance, wireless systems with up to 1250 kbit/s data rate 169 / 433 / 868 / 915 / 920 MHz ISM/SRD bands Possible support for additional frequency bands: 137 – 158.3, 205 – 237.5, and 274 – 316.6 MHz	Original	CC1200	PDF
Untitled Abstract: No abstract text available Text: CC1200 Low Power, High Performance RF Transceiver Applications Low power, high performance, wireless systems with up to 1250 kbit/s data rate 169 / 433 / 868 / 915 / 920 MHz ISM/SRD bands Possible support for additional frequency bands: 137 – 158.3, 205 – 237.5, and 274 – 316.6 MHz	Original	CC1200 CFR47 STD-T30,	PDF
Untitled Abstract: No abstract text available Text: CC1200 Low Power, High Performance RF Transceiver Applications Low power, high performance, wireless systems with 1 to 1000 kbit/s data rate 169 / 433 / 868 / 915 / 920 MHz ISM/SRD bands Possible support for additional frequency bands: 137 – 160, 205 – 240 and 274 – 320 MHz	Original	CC1200 CFR47 STD-T30,	PDF
Untitled Abstract: No abstract text available Text: CC1200 Low Power, High Performance RF Transceiver Applications Low power, high performance, wireless systems with up to 1250 kbit/s data rate 169 / 433 / 868 / 915 / 920 MHz ISM/SRD bands Possible support for additional frequency bands: 137 – 158.3, 205 – 237.5, and 274 – 316.6 MHz	Original	CC1200 CFR47 STD-T30,	PDF
CGB7014-BD Abstract: CGB7014-BD-000V DM6030HK TS3332LD Text: DC-8.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier June 2007 - Rev 15-Jun-07 CGB7014-BD Features Chip Layout 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz 20.3 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature	Original	15-Jun-07 CGB7014-BD CGB7014-BD CGB7014-BD-000V CGB7014-BD-000V DM6030HK TS3332LD	PDF
Untitled Abstract: No abstract text available Text: DC-8.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier June 2007 - Rev 15-Jun-07 CGB7014-BD Features Chip Layout 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz 20.3 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature	Original	15-Jun-07 CGB7014-BD CGB7014-BD CGB7014-BD-000V	PDF
CGB7014-BD Abstract: CGB7014-BD-000V DM6030HK TS3332LD Text: DC-8.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7014-BD Features Chip Layout 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz 20.3 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature	Original	04-Apr-07 CGB7014-BD CGB7014-BD CGB7014-BD-000V CGB7014-BD-000V DM6030HK TS3332LD	PDF
uln 2008 Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A Text: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications	Original	BFP740 uln 2008 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184 MRF184S, 31JUL04 31JAN05	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 0, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This	Original	MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940N	PDF
XRF184 Abstract: MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistor MRF184 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device	Original	MRF184/D MRF184 MRF184/D* XRF184 MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA	PDF
MRF184 Abstract: MRF184S MRF184SR1 173 MHz RF CHIP Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184/D MRF184 MRF184S MRF184SR1 173 MHz RF CHIP	PDF
CRCW12064701FKTA Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This	Original	MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940NBR1 CRCW12064701FKTA a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22	PDF

motorola MOSFET 935 Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184/D MRF184 MRF184S motorola MOSFET 935 XRF184 MRF184S 173 MHz RF CHIP	PDF
Untitled Abstract: No abstract text available Text: CC1175 www.ti.com SWRS116D – AUGUST 2011 – REVISED OCTOBER 2013 High-Performance RF Transmitter for Narrowband Systems Check for Samples: CC1175 1 Introduction 1.1 Features • High-Performance, Single-Chip Transmitter – Very Low Phase Noise: –111 dBc/Hz at	Original	CC1175 SWRS116D 10-kHz 128-byte CC1190	PDF
MRF184 Abstract: MRF184R1 MRF184SR1 173 MHz RF CHIP Text: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	945roperty MRF184R1 MRF184SR1 MRF184/D MRF184 MRF184SR1 173 MHz RF CHIP	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184/D MRF184 MRF184SR1	PDF
MRF184 Abstract: MRF184R1 MRF184SR1 Text: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	945roperty MRF184R1 MRF184SR1 MRF184/D MRF184 MRF184SR1	PDF
Untitled Abstract: No abstract text available Text: CC1201 www.ti.com SWRS154 – OCTOBER 2013 Low-Power, High-Performance RF Transceiver Check for Samples: CC1201 1 Introduction 1.1 Features • RF Performance and Analog Features: – High-Performance, Single-Chip Transceiver • Excellent Receiver Sensitivity:	Original	CC1201 SWRS154 50-kHz 10-kHz	PDF
MOTOROLA 934 Abstract: MOTOROLA 935 MRF184 MRF184R1 MRF184SR1 Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184/D MRF184R1 MRF184SR1 MOTOROLA 934 MOTOROLA 935 MRF184 MRF184SR1	PDF
RF184 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POW ER Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen cies to 1.0 GHz. The high gain and broadband performance of these devices	OCR Scan	RF184 RF184S RF184S	PDF
Motorola 0936 Abstract: 305 Power Mosfet MOTOROLA 173 MHz RF CHIP Text: MOTOROLA . . _ Order this document byMRFit>4/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF184 RF POWER Field-Efffect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen cies to 1.0 GHz. The high gain and broadband performance of this device	OCR Scan	945rola, X34873Q-2 MRF184/D Motorola 0936 305 Power Mosfet MOTOROLA 173 MHz RF CHIP	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen cies to 1.0 GHz. The high gain and broadband performance of these devices	OCR Scan	MRF184/D MRF184	PDF

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169 MHZ RF CHIP Search Results

169 MHZ RF CHIP Result Highlights (5)

169 MHZ RF CHIP Datasheets Context Search

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CGB7014-BD

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CGB7014-BD

uln 2008

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XRF184

MRF184

CRCW12064701FKTA

motorola MOSFET 935

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MRF184

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MRF184

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MOTOROLA 934

RF184

Motorola 0936

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