EIA-364-05
Abstract: EIA-364-29 EIA-364-65 aisi EIA-TS-364-1000 240 pin DIMM DDR3 through hole EIA-364-52 DDR3 socket Qualification Test Report ddr3 connector EIA EIA-364-13 DIMM
Text: Product Specification 108-2214 16Feb09 Rev C Fully Buffered and DDR3 DIMM Soldertail Sockets 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for the Tyco Electronics Fully Buffered and DDR3 Dual In-Line Mem ory Module DIMM Soldertail Socket.
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16Feb09
09Feb05.
EIA-364-05
EIA-364-29
EIA-364-65
aisi
EIA-TS-364-1000
240 pin DIMM DDR3 through hole
EIA-364-52
DDR3 socket Qualification Test Report
ddr3 connector EIA
EIA-364-13 DIMM
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BLY65
Abstract: EIA-364-29 BLY12 EIA-364-29B
Text: 502-1257 Engineering Report 16Feb09 Rev A Contact Retention Testing of Medical CPC Subassemblies 1. INTRODUCTION 1.1. Purpose Testing was perform ed on Tyco Electronics Medical Circular Plastic Connector CPC plug and receptacle subassem blies to determ ine the effects of soldering heat on contact retention.
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16Feb09
EA20080115T
EA20090067T,
EIA-364-29B.
350/C.
BLY65
EIA-364-29
BLY12
EIA-364-29B
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EIA-364-13
Abstract: EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 EIA-364-52 EIA-364-18
Text: Product Specification 108-2246 16Feb09 Rev C 1.0 mm Mezzanine Connectors 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for the Tyco Electronics 1.0 m m Mezzanine Connectors. 1.2. Qualification W hen tests are perform ed on the subject product line, procedures specified in Figure 1 shall be used.
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16Feb09
18Sep97.
29Jan09.
EIA-364-13
EIA-364-20
EIA-364-21
EIA-364-27
EIA-364-28
EIA-364-52
EIA-364-18
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Untitled
Abstract: No abstract text available
Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC
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Si7456DP
Si7456DP-T1-E3
Si7456DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si7272
Abstract: No abstract text available
Text: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized
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Si7272DP
Si7272DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si7272
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3.96 Card Edge Connectors
Abstract: No abstract text available
Text: EBT156 Vishay Dale Edgeboard Connectors, Single Readout, Dip Solder, Eyelet and Wire Wrap Termination FEATURES • 0.156" 3.96 mm C-C • Modified tuning fork contacts have chamfered lead-in to reduce wear on printed circuit board contacts without sacrificing contact pressure and wiping action
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EBT156
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
3.96 Card Edge Connectors
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Si7489DP
Abstract: Si7489DP-T1-E3 Si7489DP-T1-GE3
Text: Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7489DP
Si7489DP-T1-E3
Si7489DP-T1-GE3
11-Mar-11
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Si7852DP
Abstract: Si7852DP-T1-E3
Text: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7852DP
Si7852DP-T1-E3
Si7852DP-T1-GE3
11-Mar-11
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Si7456DP-T1-E3
Abstract: Si7456DP Si7456DP-T1-GE3
Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC
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Si7456DP
Si7456DP-T1-E3
Si7456DP-T
11-Mar-11
Si7456DP-T1-GE3
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0116 transformer
Abstract: IRLI630G SiHLI630G SiHLI630G-E3 16-FEB-09 IRLI630
Text: IRLI630G, SiHLI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5V
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IRLI630G,
SiHLI630G
O-220
18-Jul-08
0116 transformer
IRLI630G
SiHLI630G-E3
16-FEB-09
IRLI630
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: FOR 1.25MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 85°C COMPLIANCE: LEAD FREE AND ROHS ELECTRICAL
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16-FEB-09
09-AUG-08
02-MAR-08
EIA-481-3
15Kpcs
180Kpcs
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Untitled
Abstract: No abstract text available
Text: Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 75 0.011 at VGS = 10 V 28 0.0145 at VGS = 4.5 V 28 Qg (Typ.) 33 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7148DP
Si7148DP-T1-E3
Si7148DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI7998DP-T1-GE3
Abstract: si7998dp si7998
Text: New Product Si7998DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 0.0053 at VGS = 10 V 30 0.007 at VGS = 4.5 V 30 VDS (V) Channel-1 30 Channel-2 30 Qg (Typ.)
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Si7998DP
Si7998DP-T1-GE3
18-Jul-08
si7998
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Si7445DP-T1-E3
Abstract: No abstract text available
Text: Si7445DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0077 at VGS = - 4.5 V - 19 0.0094 at VGS = - 2.5 V - 17 0.0125 at VGS = - 1.8 V - 15 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7445DP
Si7445DP-T1-E3
Si7445DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PowerPAK
Abstract: No abstract text available
Text: Si7459DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) - 30 0.0068 at VGS = - 10 V - 22 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®
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Si7459DP
Si7459DP-T1-E3
Si7459DP-T1-GE3
11-Mar-11
PowerPAK
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Untitled
Abstract: No abstract text available
Text: Si7448DP Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0065 at VGS = 4.5 V 22 0.009 at VGS = 2.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7448DP
Si7448DP-T1-E3
Si7448DP-T1-GE3
11-Mar-11
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24V DC motor speed control
Abstract: TMC603 schematic pwm AC "motor control" mosfet motor dc 48v pc based dc motor control using chopper AC Motor Speed Controller TMC603EVAL bldc motor for 48v "Common rail" PWM push button switch
Text: TMC603EVAL – MANUAL Evaluation board for the TMC603 three phase motor driver with BLDC back EMF commutation hallFX TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features The TMC603 evaluation board makes it possible to evaluate the features of the TMC603 three phase
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TMC603EVAL
TMC603
XC886
TMC603.
RS232
TMC603-Eval
24V DC motor speed control
schematic pwm AC "motor control"
mosfet motor dc 48v
pc based dc motor control using chopper
AC Motor Speed Controller
TMC603EVAL
bldc motor for 48v
"Common rail"
PWM push button switch
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Si7483ADP
Abstract: SI7483ADP-T1-E3 SI7483ADP-T1-GE3
Text: Si7483ADP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0057 at VGS = - 10 V - 24 0.0095 at VGS = - 4.5 V - 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7483ADP
Si7483ADP-T1-E3
Si7483ADP-T1-GE3
18-Jul-08
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Si7491DP
Abstract: Si7491DP-T1-E3
Text: Si7491DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = - 10 V - 18 0.013 at VGS = - 4.5 V - 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7491DP
Si7491DP-T1-E3
Si7491DP-T1-GE3
18-Jul-08
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Si7452DP
Abstract: Si7452DP-T1-E3
Text: Si7452DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 60 0.0083 at VGS = 10 V 19.3 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Si7452DP
Si7452DP-T1-E3
Si7452DP-T1-GE3
18-Jul-08
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si7940dp-t1-ge3
Abstract: Si7940DP
Text: Si7940DP Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 APPLICATIONS PowerPAK SO-8 S1 6.15 mm • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down
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Si7940DP
18-Jul-08
si7940dp-t1-ge3
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TLHB5800
Abstract: No abstract text available
Text: TLHB5800 Vishay Semiconductors High Efficiency Blue LED, ∅ 5 mm Untinted Non - Diffused Package FEATURES • • • • • • • • 19223 DESCRIPTION This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.
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TLHB5800
18-Jul-08
TLHB5800
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Si7983DP
Abstract: Si7983DP-T1-E3 GS 1,2 12
Text: Si7983DP Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 12 0.020 at VGS = - 2.5 V - 11 0.024 at VGS = - 1.8 V - 10.1 • Halogen-free According to IEC 61249-2-21 Available
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Si7983DP
Si7983DP-T1-E3
Si7983DP-T1-GE3
18-Jul-08
GS 1,2 12
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c 8188-2
Abstract: DIODE MARKING 9X LLP2513-11L
Text: VBUS054CD-FHI Vishay Semiconductors 4-Line BUS-Port ESD-Protection - Flow Through Design Features • • • • • • • • • • • Compact LLP2513-11L package Low package height < 0.6 mm 4-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance CD = 0.8 pF
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VBUS054CD-FHI
LLP2513-11L
1394/firewire
2002/95/EC
2002/96/EC
18-Jul-08
c 8188-2
DIODE MARKING 9X
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