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    16MEG Datasheets Context Search

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    IS42S16160D

    Abstract: IS42S16160D-7TLI
    Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg 16Meg 256-MBIT 256Mb IS42S83200D IS42S16160D IS42S16160D-7TLI

    512K32

    Abstract: 9Q512K32 UT9Q512 UT9Q512K32
    Text: Standard Products UT9Q512K32 16Megabit SRAM MCM Advanced Data Sheet January 15, 2001 FEATURES q 35ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state


    Original     		PDF UT9Q512K32 16Megabit 30krads 300krads 16Mbit) 68-lead 10krad 30krad 512K32 9Q512K32 UT9Q512

    IS42S81600B

    Abstract: 42S16800B IS42S16800B-7TLI 2MX16X4 IS42S16800B IS42S16800B-6TL
    Text: IS42S81600B IS42S16800B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM JUNE 2009 FEATURES • Clock frequency: 167, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S81600B IS42S16800B 16Meg 128-MBIT 128Mb IS42S81600B 42S16800B IS42S16800B-7TLI 2MX16X4 IS42S16800B IS42S16800B-6TL

    Untitled

    Abstract: No abstract text available
    Text: 3.3V Memory Card Expansion connectors Micron Technology, FLASH Memory, 4G, in socket Spansion, FLASH, 256MEG ISSI, SRAM, 16MEG Top View 3.3V Memory Card Power Switch Compatibility: C5505 EVM TI Part #: TMDSMCD5505 TI Price: $ 149.00 USD 5 volt in Size: 1.99 x 1.07” 50.55 x 27.18mm


    Original     		PDF 256MEG 16MEG C5505 TMDSMCD5505 x-113

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width


    Original     		PDF UT8Q512K32 16Megabit 32-bit 50krads 1E-10 68-lead 512K32 10krad

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Advanced Data Sheet August 6, 2001 FEATURES q 35ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state


    Original     		PDF UT9Q512K32 16Megabit 50krads 1E-10 0E14n/cm2 68-lead 10krad 30krad 50krad

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Preliminary Data Sheet June 20, 2001 FEATURES q 35ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows


    Original     		PDF UT8Q512K32 16Megabit 32-bit 50krads 300krads 8E-11errors/bit-day, 0E14n/cm2 68-lead 10krad 50krad

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet December 17, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows


    Original     		PDF UT8Q512K32 16Megabit 32-bit 50krads 1E-10 68-lead 512K32 10krad

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state


    Original     		PDF UT9Q512K32 16Megabit 50krads 1E-10 68-lead 512K32 -40oC

    ACT-D16M96S

    Abstract: BSA1 BS-B1
    Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM


    Original     		PDF ACT-D16M96S 16MegaBit 50-MHz 192-cycle SCD3370 BSA1 BS-B1

    UT9Q512K32E

    Abstract: No abstract text available
    Text: NOTE: This product has been replaced with UT9Q512K32E. Please use the UT9Q512K32E for NEW designs. See the April 2007 customer letter at www.aeroflex.com/QCOTS for the improvements and differences. Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet


    Original     		PDF UT9Q512K32E. UT9Q512K32E UT9Q512K32 16Megabit 50krads 68-leC 512K32 68-lead -40oC

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8MR2M8 16Megabit Non-Volatile MRAM Data Sheet April 21, 2014 www.aeroflex.com/memories FEATURES  Single 3.3-V power supply read/write  Fast 45ns read/write access time  Functionally compatible with traditional asynchronous SRAMs


    Original     		PDF 16Megabit -40oC 105oC)

    Untitled

    Abstract: No abstract text available
    Text: UG716D6648JN Data sheets can be downloaded at www.unigen.com 128M Bytes 16M x 64 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM based on 8 pcs 16M x 8 DDR SDRAM 4K Refresh FEATURES • • • • • • • PIN ASSIGNMENT (Front View) 128MB (16Meg X 64)


    Original     		PDF UG716D6648JN 128MB 16Meg 64ms/4K) 1140mil) A0-A11:

    2MX16X4

    Abstract: IS42S32400AL
    Text: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves


    Original     		PDF IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg 128-MBIT 128Mb 2MX16X4 IS42S32400AL

    Untitled

    Abstract: No abstract text available
    Text: UG716D7544HD Data sheets can be downloaded at www.unigen.com 128M Bytes 16M x 72 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Register & PLL DIMM w/ECC based on 18 pcs 16M x 4 DDR SDRAM 4K Refresh FEATURES • • • • • • • 128MB (16Meg X 72)


    Original     		PDF UG716D7544HD 128MB 16Meg 64ms/4K) D0-D17 RA0-RA11 A0-A11:

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8SDMQ64M40 2.5-Gigabit SDRAM MCM UT8SDMQ64M48 3.0-Gigabit SDRAM MCM Datasheet March 25, 2013 FEATURES  Organized as 64M x 40 16Meg x 40 x 4 banks and 64M x 48 (16Meg x 48 x 4 banks)  Single 3.3V power supply  PC100-compliant


    Original     		PDF UT8SDMQ64M40 UT8SDMQ64M48 16Meg PC100-compliant -40oC 105oC 192-cycle 3E-10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 512Mb: x8 DDR 400 SDRAM Addendum DOUBLE DATA RATE DDR SDRAM MT46V64M8 – 16MEG X 8 X 4 BANKS Features General Description • • • • • The DDR400 SDRAM is a high-speed CMOS, dynamic random-access memory that operates at a clock frequency of 200 MHz (tCK=5ns) with a peak data


    Original     		PDF 512Mb: 09005aef80af8df6 512Mb DDR400

    16M x 16 DDR TSOP-66

    Abstract: DDR333 DDR400 IS43R16160A
    Text: ISSI IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION NOVEMBER 2005 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory


    Original     		PDF IS43R16160A 16Meg 256-MBIT 456-bit 64M-bit 16-bit 16M x 16 DDR TSOP-66 DDR333 DDR400 IS43R16160A

    512K32

    Abstract: UT8Q512K32 5962-0
    Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet March, 2009 FEATURES ‰ 25ns maximum 3.3 volt supply address access time ‰ MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width


    Original     		PDF UT8Q512K32 16Megabit 32-bit 50krads 16Mbit) 512K32 5962-0

    UT8SDMQ64M48

    Abstract: 1050C UT8SDMQ64M40 sdram ut8sdmq64m48 die
    Text: Standard Products UT8SDMQ64M40 2.5-Gigabit SDRAM MCM UT8SDMQ64M48 3.0-Gigabit SDRAM MCM Advanced Datasheet September 22, 2010 INTRODUCTION FEATURES ‰ Organized as 64M x 40 16Meg x 40 x 4 banks and 64Meg x 48 (16Meg x 48 x 4 banks) ‰ Single JEDEC standard 3.3V power supply


    Original     		PDF UT8SDMQ64M40 UT8SDMQ64M48 16Meg 64Meg PC100-compliant -40oC 105oC 1050C sdram ut8sdmq64m48 die

    W3DG7217V-D2

    Abstract: No abstract text available
    Text: White Electronic Designs W3DG7217V-D2 PRELIMINARY* 128MB - 16Mx72 SDRAM UNBUFFERED FEATURES DESCRIPTION Burst Mode Operation The W3DG7217V is a 16Mx72 synchronous DRAM module which consists of nine 16Meg x 8 SDRAM components in TSOP-II package, and one 2K EEPROM in an 8-pin


    Original     		PDF W3DG7217V-D2 128MB 16Mx72 W3DG7217V 16Meg W3DG7217V-D2

    IS42S16160G-5BL

    Abstract: IS42S83200G IS42S16160G5BL
    Text: IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 JANUARY 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge


    Original     		PDF IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg 16Meg 256Mb 54-Pin Alloy42 IS42S16160G-5BL IS42S83200G IS42S16160G5BL

    Untitled

    Abstract: No abstract text available
    Text: IS45S81600B IS45S16800B ISSI 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION AUGUST 2005 • Clock frequency: 143, 100 MHz OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a


    Original     		PDF IS45S81600B IS45S16800B 16Meg 128-MBIT

    ISSI 742

    Abstract: No abstract text available
    Text: ISSI IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION AUGUST 2005 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory


    Original     		PDF IS43R16160A 16Meg 256-MBIT ISSI 742