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    Switchcraft Conxall PT16MX16F

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    OMRON Industrial Automation GT1-ID16MX-1

    CONN 16PT PNP INPUT
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    OMRON Industrial Automation GT1-OD16MX-1

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    OMRON Industrial Automation E2EM-X16MX1-5M

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    OMRON Industrial Automation E2EM-X16MX1-2M

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    16MX1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs


    Original     		PDF 144PIN PC133 256MB 16MX16 TS32MSS64V6G 32Mx64 TS32MSS64V6G JEP-108E

    M368L1624DTL

    Abstract: No abstract text available
    Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M368L1624DTL 184pin 128MB 16Mx64 16Mx16 64-bit M368L1624DTL

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    K4S56163LC

    Abstract: No abstract text available
    Text: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S56163LC-R 16Mx16 54CSP 16Bit K4S56163LC

    SAMSUNG MCP

    Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
    Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


    Original     		PDF KBC00B7A0M 16Mx16) 4Mx16) 512Kx16) 100pF 111-Ball SAMSUNG MCP MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report

    K4S561633C

    Abstract: No abstract text available
    Text: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.


    Original     		PDF K4S561633C-R 16Mx16 54CSP 16Bit K4S561633C

    K4S561632C

    Abstract: M464S1654CTS
    Text: M464S1654CTS PC133/PC100 SODIMM M464S1654CTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654CTS is a 16M bit x 64 Synchro- • Performance range nous Dynamic RAM high density memory module. The Samsung M464S1654CTS consists of four CMOS 16M x 16 bit with


    Original     		PDF M464S1654CTS PC133/PC100 M464S1654CTS 16Mx64 16Mx16, 144-pin 100MHz K4S561632C

    IS46R16160B

    Abstract: zentel is43r16160b
    Text: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/


    Original     		PDF IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb conx16 66-pin IS46R16160B zentel is43r16160b

    Untitled

    Abstract: No abstract text available
    Text: M470L1624DT0 200pin DDR SDRAM SODIMM 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM 200pin SODIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.1 Jan. 2002 M470L1624DT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release.


    Original     		PDF M470L1624DT0 200pin 128MB 16Mx64 16Mx16 64-bit

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms

    Untitled

    Abstract: No abstract text available
    Text: 200PIN DDR266 Unbuffered SO-DIMM 128MB With 16Mx16 CL2.5 TS16MSD64V6G Description Placement The TS16MSD64V6G is a 16M x 64bits Double Data Rate SDRAM high-density for DDR266.The TS16MSD64V6G consists of 4pcs CMOS 16Mx16 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil


    Original     		PDF 200PIN DDR266 128MB 16Mx16 TS16MSD64V6G TS16MSD64V6G 64bits

    M368L1624BT1

    Abstract: PC200
    Text: M368L1624BT1 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.9 June. 2001 Rev. 0.9 June. 2001 184pin Unbuffered DDR SDRAM MODULE M368L1624BT1 Revision History


    Original     		PDF M368L1624BT1 184pin 128MB 16Mx64 16Mx16 64-bit 133Mhz) M368L1624BT1 PC200

    nanya

    Abstract: NT128S64VH4A0GM NT128S64VH4A0GM-75B NT128S64VH4A0GM-7K NT128S64VH4A0GM-8B
    Text: NT128S64VH4A0GM 128MB : 16M x 64 SDRAM SODIMM 16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Features l l 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Programmable Operation:


    Original     		PDF NT128S64VH4A0GM 128MB 16Mx64 16Mx16, 13/9/2TECHNOLOGY 010Max nanya NT128S64VH4A0GM NT128S64VH4A0GM-75B NT128S64VH4A0GM-7K NT128S64VH4A0GM-8B

    K4S561633C

    Abstract: K4S561633C-RL
    Text: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).


    Original     		PDF K4S561633C-RL 16Mx16 54CSP 256Mb K4S561633C

    Untitled

    Abstract: No abstract text available
    Text: UG216C3611GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3611GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3611GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAM in SOJ Package and 2 pcs of ABT16


    Original     		PDF UG216C3611GJG 72Pin 16Mx1 ABT16 1250mil)

    we 510

    Abstract: ras 510 UG216C3261GJG 45388
    Text: UG216C3261GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3261GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3261GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Packages mounted on 72 Pin


    Original     		PDF UG216C3261GJG 72Pin 16Mx1 we 510 ras 510 45388

    Untitled

    Abstract: No abstract text available
    Text: UG216E3684HKG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216E3684HKG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3684HKG(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAMs in 400mil Package and 4 pcs of 16Mx1


    Original     		PDF UG216E3684HKG 72Pin 16Mx4 400mil 16Mx1 300mil 1500mil)

    ras 510

    Abstract: we 510 UG216C3211GJG
    Text: UG216C3211GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3211GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3211GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16


    Original     		PDF UG216C3211GJG 72Pin 16Mx1 ABT16 ras 510 we 510

    HYM72V16M636AT6

    Abstract: RA12
    Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636AT6 Series DESCRIPTION The Hyundai HYM72V16M636AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF 16Mx64 PC133 16Mx16 HYM72V16M636AT6 16Mx64bits 16Mx16bits 400mil 54pin 168pin RA12

    RA12

    Abstract: No abstract text available
    Text: 32Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T6 Series DESCRIPTION The Hyundai HYM72V32M636T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF 32Mx64 PC133 16Mx16 HYM72V32M636T6 32Mx64bits 16Mx16bits 400mil 54pin 168pin RA12

    Untitled

    Abstract: No abstract text available
    Text: UG216C3674HKG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216C3674HK(G)T is a 16,777,216 bits by 36 SIMM module.The UG216C3674HK(G)T is assembled using 8 pcs of 16Mx4 4K refresh DRAM in 400mil Package and 4 pcs of 16Mx1


    Original     		PDF UG216C3674HKG 72Pin UG216C3674HK 16Mx4 400mil 16Mx1 300mil 1500mil)

    Untitled

    Abstract: No abstract text available
    Text: UG216E3611GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3611GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3611GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16


    Original     		PDF UG216E3611GJG 72Pin 16Mx1 ABT16 1250mil)

    IS43DR83200A

    Abstract: IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32
    Text: IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 stacked die DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle


    Original     		PDF IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 18-compatible) IS43DR32160A-37CBLI 400Mhz IS43DR32160A-5BBLI IS43DR83200A IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32

    IS42VM16160D-8TLI

    Abstract: IS42VM83200D
    Text: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM83200D IS42VM16160D IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb IS42VM16160D-8TLI