GT30J301
Abstract: No abstract text available
Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. : VCE (sat) = 2.7V (Max.)
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GT30J301
GT30J301
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Untitled
Abstract: No abstract text available
Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT30J301
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Untitled
Abstract: No abstract text available
Text: GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT20J301
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GT30J301
Abstract: No abstract text available
Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT30J301
GT30J301
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GT20J301
Abstract: toshiba code igbt
Text: GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)
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GT20J301
2-16C1C
GT20J301
toshiba code igbt
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3p transistor
Abstract: 2-16C1B
Text: Transistor Outline Package New Type TO–3P (N) Package Outline Dimensions Outline Dimensions Unit: mm 1.8 max 15.9 max 3.3 max 2.0 ±0.3 1.0 +0.3 –0.25 5.45 ±0.2 20.5 ±0.5 9.0 2.0 20.0 ±0.3 4.5 φ3.2 ±0.2 3 4.8 max 2 2.8 1 (Bottom view) 0.6 +0.3 –0.1
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16D1A
16C1A
16C1B
16C1C
3p transistor
2-16C1B
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igbt 300V 10A datasheet
Abstract: GT10J301
Text: GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. : tf = 0.30µs Max. Low Saturation Voltage. : VCE (sat) = 2.7V (Max.)
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GT10J301
igbt 300V 10A datasheet
GT10J301
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GT15Q301
Abstract: No abstract text available
Text: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.32 µs Max. l Low Saturation Voltage
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GT15Q301
GT15Q301
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Untitled
Abstract: No abstract text available
Text: GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. : tf = 0.30µs Max. Low Saturation Voltage. : VCE (sat) = 2.7V (Max.)
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GT10J301
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Untitled
Abstract: No abstract text available
Text: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.32 µs Max. Low Saturation Voltage : VCE (sat) = 2.7 V (Max.)
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GT15Q301
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GT10J301
Abstract: No abstract text available
Text: GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)
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GT10J301
GT10J301
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GT15Q301
Abstract: No abstract text available
Text: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.32 µs Max. Low Saturation Voltage : VCE (sat) = 2.7 V (Max.)
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GT15Q301
GT15Q301
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GT20J301
Abstract: No abstract text available
Text: GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
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GT20J301
GT20J301
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GT10J301
Abstract: No abstract text available
Text: GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation. l Enhancement−Mode. l High Speed. : tf = 0.30µs Max. l Low Saturation Voltage.
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GT10J301
GT10J301
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GT15Q301
Abstract: No abstract text available
Text: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.32 µs Max. Low saturation voltage : VCE (sat) = 2.7 V (Max.)
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GT15Q301
GT15Q301
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B1181
Abstract: JIS B1181 TRANSISTOR b1181 2-16C1C B11-88 JIS b 2-21F1C ac238 AC654 AC652
Text: ACCESSORIES Some sem iconductors require accessories. Such accessories are listed below th e external drawings o f each sem iconductor standard. Usage o f such accessories is show n in th e follow ing figures. to be applied to 2-16C1C (to be appüed to 2-21F1B and 2-21F1C)
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OCR Scan
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2-16C1C)
2-21F1B
2-21F1C)
AC238
AC402A
AC262
AC402A
AC401
AC701A
B1181
JIS B1181
TRANSISTOR b1181
2-16C1C
B11-88
JIS b
2-21F1C
AC654
AC652
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