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Edwards Signaling 116DEGEX-FJ Visual Signal Indicator, Strobe; Module Lens Colour:Transparent; Supply Voltage Vac:-; Supply Voltage Vdc:33Vdc; Visual Signal Type:Strobe; Lens Diameter:-; Product Range:116Degex Series; Ip/Nema Rating:Nema 3R, Nema 4X Rohs Compliant: No \|Edwards Signaling Products 116DEGEX-FJ
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Newark	116DEGEX-FJ	Bulk			1	1 $1809.13 10 $1464.09 100 $1296.23 1000 $1296.23 10000 $1296.23	Buy Now
RS	116DEGEX-FJ	Bulk	1		1	1 $1881.5 10 $1881.5 100 $1881.5 1000 $1881.5 10000 $1881.5	Buy Now
Edwards Signaling 116DEGEXB-FJ Strobe, haz Loc,16-33V, sync, blu \|Edwards Signaling Products 116DEGEXB-FJ
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Newark	116DEGEXB-FJ	Bulk			1	1 $2071.02 10 $1913.73 100 $1848.19 1000 $1848.19 10000 $1848.19	Buy Now
RS	116DEGEXB-FJ	Bulk			1	1 $2091.73 10 $2091.73 100 $2091.73 1000 $2091.73 10000 $2091.73	Get Quote
Edwards Signaling 116DEGEXA-FJ Strobe, haz Loc,16-33V, sync, amb \|Edwards Signaling Products 116DEGEXA-FJ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	116DEGEXA-FJ	Bulk			1	1 $2542.9 10 $2057.91 100 $1821.97 1000 $1821.97 10000 $1821.97	Buy Now
RS	116DEGEXA-FJ	Bulk			1	1 $2568.33 10 $2568.33 100 $2568.33 1000 $2568.33 10000 $2568.33	Get Quote
Edwards Signaling 116DEGEXR-FJ Strobe, haz Loc,16-33V, sync, red \|Edwards Signaling Products 116DEGEXR-FJ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	116DEGEXR-FJ	Bulk			1	1 $2542.9 10 $2057.91 100 $1821.97 1000 $1821.97 10000 $1821.97	Buy Now
RS	116DEGEXR-FJ	Bulk			1	1 $2568.33 10 $2568.33 100 $2568.33 1000 $2568.33 10000 $2568.33	Get Quote
Edwards Signaling 116DEGEXG-FJ Strobe, haz Loc,16-33V, sync, grn \|Edwards Signaling Products 116DEGEXG-FJ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	116DEGEXG-FJ	Bulk			1	1 $2542.9 10 $2057.91 100 $1821.97 1000 $1821.97 10000 $1821.97	Buy Now
RS	116DEGEXG-FJ	Bulk			1	1 $2345.59 10 $2345.59 100 $2345.59 1000 $2345.59 10000 $2345.59	Get Quote

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Catalog Datasheet	MFG & Type	Document Tags	PDF
SIR-341ST3F Abstract: No abstract text available Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it	Original	SIR-341ST3F SIR-341ST3F 940nm IF50mA) R1010A	PDF
86210 but 70 Abstract: ids 2560 KGF1921 55076 151169 Text: ODRKGF1921-04 Electronic Components KGF1921 Issue Date:Jan 20, 2004 Preliminary RF Driver HEMT GENERAL DESCRIPTION The KGF1921, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1921 specifications are guaranteed to a fixed	Original	ODRKGF1921-04 KGF1921 KGF1921, OT-89 KGF1921 27dBm) 05GHz 27dBm 86210 but 70 ids 2560 55076 151169	PDF
toy IR remote control circuit diagram Abstract: SIR-341ST3F 940NM data sheet Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide	Original	SIR-341ST3F SIR-341ST3F 940nm toy IR remote control circuit diagram 940NM data sheet	PDF
KGF1155B Abstract: KGF1155 Text: J2Q0012-38-71 作成：1998年 7月 KGF1155B/1155 l 前回作成：1998年 1月 ¡ 電子部品 KGF1155B/1155 小信号アンプ n 概要 KGF1155Bは低雑音、低電流動作を特長とするUHF帯用の小信号アンプです。外部インピーダンス整合回路は必要ですが、特性は全て5V、850MHz用の固定整合回路（アンプ動	Original	J2Q0012-38-71 KGF1155B/1155 KGF1155B/1155 KGF1155BUHF 5V850MHz KGF1155KGF1155BS KGF1155B KGF1155 KGF1155B KGF1155	PDF
9938 GM Abstract: 9938 G KGF1175 KGF1175B E 13007 0 t4 3578 Text: J2Q0015-38-71 作成：1998年 7月 KGF1175B/1175 l 前回作成：1998年 1月 ¡ 電子部品 KGF1175B/1175 小信号アンプ n 概要 KGF1175Bは低雑音、低電流動作を特長とするUHF帯からL帯用の小信号アンプです。外部インピーダンス整合回路は必要ですが、特性は全て5V、850MHz用の固定整合回路で保証され	Original	J2Q0015-38-71 KGF1175B/1175 KGF1175B/1175 KGF1175BUHFL 5V850MHz KGF1175KGF1175BS KGF1175B KGF1175 9938 GM 9938 G KGF1175 KGF1175B E 13007 0 t4 3578	PDF
Z050 Abstract: RF Driver HEMT 86210 but 70 ids 2560 Text: ODRKGF1921-05 Electronic Components KGF1921 Issue Date:Jan 20, 2005 Preliminary RF Driver HEMT GENERAL DESCRIPTION The KGF1921, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1921 specifications are guaranteed to a fixed	Original	KGF1921 ODRKGF1921-05 KGF1921, OT-89 KGF1921 27dBm) 05GHz 27dBm Z050 RF Driver HEMT 86210 but 70 ids 2560	PDF
SIR-341ST3F Abstract: a940 Text: Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 mm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation	Original	SIR-341ST3F SIR-341ST3F 16deg. a940	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Document Number: AN4399 Rev. 1, 01/2013 Application Note High Precision Calibration of a Three-Axis Accelerometer by Mark Pedley 1 Introduction Contents 1 Three-axis accelerometers supplied for the consumer market are typically calibrated by the sensor	Original	AN4399	PDF
Untitled Abstract: No abstract text available Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it	Original	SIR-341ST3F SIR-341ST3F 940nm R1120A	PDF
Untitled Abstract: No abstract text available Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it	Original	SIR-341ST3F SIR-341ST3F 940nm IF50mA) 1/216deg. P940nm) R1120A	PDF
450 khz filter Abstract: AN6227FHN gmx matsua Text: ICs for Mobile Communication AN6227FHN Single chip, transmission and reception IC for PDC 5.20±0.10 5.00 The AN6227FHN is a transmission and reception IC incorporating reception sleep function for a 1.5 GHz cellular telephone. 19 M Di ain sc te on na tin nc	Original	AN6227FHN AN6227FHN 450 khz filter gmx matsua	PDF
C214P Abstract: KGF1191 CB 0925 C107P cc 3061 Text: J2Q0016-38-71 作成：1998年 7月 ¡ 電子部品 KGF1191 l 前回作成：1998年 1月 KGF1191 小信号アンプ n 概要 KGF1191は低電圧、低電流動作、高利得、高アイソレーションを特長とするUHF帯からL帯用の小信号2段アンプです。	Original	J2Q0016-38-71 KGF1191 KGF1191 KGF1191UHFL 3V850MHz -35dBm Z075W, C214P CB 0925 C107P cc 3061	PDF
SIR-341ST3F Abstract: No abstract text available Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide	Original	SIR-341ST3F SIR-341ST3F 940nm	PDF
Untitled Abstract: No abstract text available Text: SIR-341ST3F Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it	Original	SIR-341ST3F SIR-341ST3F 940nm IF50mA) 1/216deg. P940nm) R1120A	PDF

128 QFP 14x20 Abstract: 26625 3802 COM16 RTS8505C Text: RTS8505C Data Sheet Features .1 Block Diagram .1	Original	RTS8505C 14x20 530-ASS-P004 RTS8505C 128 QFP 14x20 26625 3802 COM16	PDF
Untitled Abstract: No abstract text available Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it	Original	SIR-341ST3F SIR-341ST3F 940nm R1120A	PDF
SIR-341ST3F Abstract: No abstract text available Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide	Original	SIR-341ST3F SIR-341ST3F 940nm	PDF
Untitled Abstract: No abstract text available Text: 4 DRAWING MA D E THIS IN THIRD DRAWING C ANGLE IS UNPUBLISHED. COPYRIGHT 3 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL 2 <3> INTERNATIONAL RIGHTS DI ST L OC ,19 AF RESERVED. REV I 5 I 0 N5 50 P F LTR Z O NE DESCRIPTION B D WI R E FUNNEL	OCR Scan	22JUN01 16DEG99 16DEC99 1GDEC99 13469/edmmod -MAR-00	PDF
Untitled Abstract: No abstract text available Text: O K I electronic components KGF1156_ Small-Signal Amplifier for UHF-Band and P C S Frequencies GENERAL DESCRIPTION The KG F1156 is a small-signal U H F-band amplifier that features high output pow er, high gain, low noise, and low current dissipation. The KG F1156 specifications are guaranteed by the fixed	OCR Scan	KGF1156_ F1156 KGF1156 KGF1156 b72424Q 0D22b54 16deg	PDF

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16DEG Price and Stock

Edwards Signaling 116DEGEX-FJ

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16DEG Datasheets Context Search

SIR-341ST3F

86210 but 70

toy IR remote control circuit diagram

KGF1155B

9938 GM

Z050

SIR-341ST3F

Untitled

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450 khz filter

C214P

SIR-341ST3F

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128 QFP 14x20

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SIR-341ST3F

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