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    16K ELECTRICALLY ERASABLE PROMS Search Results

    16K ELECTRICALLY ERASABLE PROMS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PAL16R8-5JC Rochester Electronics LLC PAL16R8 - Electrically Erasable PAL Device Visit Rochester Electronics LLC Buy
    FM93CS46M8 Rochester Electronics LLC 93CS46 - EEPROM, 64X16, Serial, CMOS, PDSO8 Visit Rochester Electronics LLC Buy
    NM93C56EN Rochester Electronics LLC 93C56 - EEPROM, 128X16, Serial, CMOS, PDIP8 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC X28C512 - EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32 Visit Rochester Electronics LLC Buy
    X28C512JI-15 Rochester Electronics LLC X28C512 - EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32 Visit Rochester Electronics LLC Buy

    16K ELECTRICALLY ERASABLE PROMS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    m2817a

    Abstract: 16K Electrically Erasable PROMs
    Text: E/M2817A Timer E2 16K Electrically Erasable PROMs October 1989 Features Description • Military and Temperature Range • -55° C to + 1251C: M2817A Military • -4 0 0 C to +85° C: E2817A (Extended) SEEQ’s M2817A is a 5 Vonly, 2Kx 8 electrically erasable


    OCR Scan     		E/M2817A 1251C: M2817A E2817A M2817A MD400015/B 16K Electrically Erasable PROMs PDF

    Untitled

    Abstract: No abstract text available
    Text: E/M2817A Timer E2 16K Electrically Erasable PROMs October 1989 Features Description • SEEQ's M2817A is a 5 V only, 2 K x 8 electrically erasable programmable read only memory EEPROM . It is pack­ aged in a 28 pin package and has a ready/busy pin. This


    OCR Scan     		E/M2817A M2817A M2817A E2817A MD400015/B PDF

    2817A250

    Abstract: l 817a 2817A200 CI 817a 2817A-25 2817A300 L817 2817 EEPROM eeprom 2817
    Text: 2817A/5517A Timer E2 16K Electrically Erasable PROMs October 1989 Description Features • Ready/Busy Line for End-of-Write ■ High Endurance Write Cycles SEEO's 5517A and 2817A are 5V only, 2Kx8 electrically erasable programmable read only memories EEPROMs . They are packaged in a 28 pin package and


    OCR Scan     		817A/5517A 5S17A MD400014/C 2S17A 2817A250 l 817a 2817A200 CI 817a 2817A-25 2817A300 L817 2817 EEPROM eeprom 2817 PDF

    seeq 2816A

    Abstract: SEEQ 2816 eeprom 2816 seeq 2816 eeprom 2816A eeprom seeq 5516 eeprom 2816A AH150 16K Electrically Erasable PROMs 2816A
    Text: 2816A/2816AH 5516A/5516AH Technology, Incorporated Timer E 2 16K Electrically Erasable PROMs _August 1992 Features Description • Military and Extended Temperature Range SEEQ's2816A/5516A are 5V only, 2 K x 8 electrically eras­


    OCR Scan     		816A/2816AH 516A/5516AH s2816A/5516A MD400102/A 2S16A seeq 2816A SEEQ 2816 eeprom 2816 seeq 2816 eeprom 2816A eeprom seeq 5516 eeprom 2816A AH150 16K Electrically Erasable PROMs 2816A PDF

    J28AQ

    Abstract: .5E2
    Text: NMC27C51 PRELIMINARY National sJkSemiconductor NMC27C51 Very High Speed Version 131,072-Bit 16k x 8 UV Erasable CMOS PROM Pin Compatible with 128k Bipolar PROMs General Description Features The NMC27C51 is a very high-speed 128k, UV erasable and electrically reprogrammable CMOS EPROM, ideally suited


    OCR Scan     		NMC27C51 072-Bit 28-pin J28AQ .5E2 PDF

    Untitled

    Abstract: No abstract text available
    Text: E/M2816A Timer E2 16K Electrically Erasable PROMs October 1989 Features Description • High Endurance Write Cycles SEEO's E/M2816A are 5V only, 2 K x 8 electrically eras­ able programmable read only memories EEPROMs . EEPROMs are ideal for applications which require non­


    OCR Scan     		E/M2816A E/M2816A E/M2816A. MD400017/C PDF

    Untitled

    Abstract: No abstract text available
    Text: 2816A/5516A Timer E2 16K Electrically Erasable PROMs October 1988 Features Description • High Endurance Write Cycles • 5S16A : 1,000,000 Cycles/Byte Minimum • 2816A: 10,000 Cycles/Byte Minimum ■ On-Chip Timer • Automatic Erase and Write Time Out


    OCR Scan     		816A/5516A 5S16A 2816AH) MD400016/C PDF

    M2816A

    Abstract: seeq 2816A
    Text: E/M2816A Timer E2 16K Electrically Erasable PROMs October 1989 Features Description • High Endurance Write Cycles «2816A: 10,000 Cycles/Byte Minimum ■ On-Chip Timer • Automatic Erase and Write Time Out ■ All Inputs Latched by Write or Chip Enable


    OCR Scan     		E/M2816A 110mA M2816A E2816A E/M2816A MD400017/C M2816A seeq 2816A PDF

    ML50

    Abstract: seeq 2816A 2816A 2816A eeprom eeprom 2816A 16K Electrically Erasable PROMs
    Text: 2816A/5516A Timer E2 16K Electrically Erasable PROMs O ctober 1988 Features • ■ Description High E ndurance Write Cycles • 5S16A : 1,000,000 C ycles/B yte Minim um • 2816A : 10,000 C ycles/B yte Minim um SEEQ 's 5516A an d 2 8 1 6 A are 5 V on !y, 2K x8 electrically


    OCR Scan     		816A/5516A D400016/C 816A/5516A MD40Q016/C ML50 seeq 2816A 2816A 2816A eeprom eeprom 2816A 16K Electrically Erasable PROMs PDF

    xicor X2816A

    Abstract: X2816A xicor 2816 X2816AM X2816AM-35 X2816AM-45 x2816
    Text: im Military 16K 2048 x 8 Bit X2816AM Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data —Self Timed Write_ —Noise Protected WE Pin


    OCR Scan     		X2816AM X2816A X2816AM xicor X2816A xicor 2816 X2816AM-35 X2816AM-45 x2816 PDF

    seeq 2817a

    Abstract: eeprom 2817A 2817A eeprom 2817 2817 seeq 2817 EEPROM 2817A EEPROM 2817AH 5517a
    Text: Timer E2 16K Electrically Erasable PROMs August 1992 Features • Military Extended and Commercial Temperature Range • - 5 5 0C to +125° C Operation Military . - 4 0 ° C to +85° C Operation (Extended) • 0 °C to +70° C Operation (Commercial) ■


    OCR Scan     		817A/2817 517A/5517AH S517A: MIL-STD-883 MD400101/A 817A/2817AH 517A/5517AH 2B17A seeq 2817a eeprom 2817A 2817A eeprom 2817 2817 seeq 2817 EEPROM 2817A EEPROM 2817AH 5517a PDF

    200B

    Abstract: 93C76 93C86 DK-2750
    Text: 93C76/86 8K/16K 5.0V Microwire Serial EEPROM FEATURES DIP Package 1 2 3 4 8 VCC 7 6 5 PE ORG VSS SOIC Package 1 2 3 4 93C76/86 CS CLK DI DO 8 7 6 5 VCC PE ORG VSS BLOCK DIAGRAM VCC VSS DESCRIPTION The Microchip Technology Inc. 93C76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs.


    Original     		93C76/86 8K/16K 93C76/86 D-81739 200B 93C76 93C86 DK-2750 PDF

    200B

    Abstract: 93C76 93C86 DK-2750 RG41
    Text: 93C76/86 8K/16K 5.0V Microwire Serial EEPROM FEATURES DIP Package 1 2 3 4 8 VCC 7 6 5 PE ORG VSS SOIC Package 1 2 3 4 93C76/86 CS CLK DI DO 8 7 6 5 VCC PE ORG VSS BLOCK DIAGRAM VCC VSS DESCRIPTION The Microchip Technology Inc. 93C76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs.


    Original     		93C76/86 8K/16K 93C76/86 200B 93C76 93C86 DK-2750 RG41 PDF

    diode a7

    Abstract: International CMOS Technology ring COUNTER 200B 93C76 93C86 RG41
    Text: 93C76/86 8K/16K 5.0V Microwire Serial EEPROM FEATURES DIP Package 1 2 3 4 8 VCC 7 6 5 PE ORG VSS SOIC Package 1 2 3 4 93C76/86 CS CLK DI DO 8 7 6 5 VCC PE ORG VSS BLOCK DIAGRAM VCC VSS DESCRIPTION The Microchip Technology Inc. 93C76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs.


    Original     		93C76/86 8K/16K 93C76/86 DS21132D-page diode a7 International CMOS Technology ring COUNTER 200B 93C76 93C86 RG41 PDF

    INTEL D 2816

    Abstract: 2816 rom 8155 intel microprocessor block diagram ROM 2816 2816 memory block diagram of intel 8155 chip Intel 2816 intel 8155 RAM 2816 8155 intel microprocessor architecture
    Text: in te i [p ^ iy iM o iM c w 2816 16K 2K x 8 ELECTRICALLY ERASABLE PROM • HMOS*-E FLOTOX Cell Design ■ Conforms to JEDEC Byte-Wide Family Standard ■ Reliable Floating Gate Technology ■ Microprocessor Compatible Architecture ■ Very Fast Access Time


    OCR Scan     		AP-102 AP-101 INTEL D 2816 2816 rom 8155 intel microprocessor block diagram ROM 2816 2816 memory block diagram of intel 8155 chip Intel 2816 intel 8155 RAM 2816 8155 intel microprocessor architecture PDF

    intel 2816A

    Abstract: intel 2816 eeprom for DQ 2816-A 250 2816A 2816A eeprom INTEL D 2816 intel 2816 eeprom 2816A vpp eeprom 2816A ic rom 2816
    Text: ir r t e T PffigUM DNAO ftf 2816A 16K 2K x 8 ELECTRICALLY ERASABLE PROM 5 Volt Only Operation Fast Read Access Time: —2816A-2, 200ns —2816A, 250ns -2816A-3, 350ns —2816A-4, 450ns HMOS*-E Flotox Cell Design Minimum Endurance of 10,000 Erase/Write Cycles per Byte


    OCR Scan     		--2816A-2, 200ns --2816A, 250ns -2816A-3, 350ns --2816A-4, 450ns 384-bit intel 2816A intel 2816 eeprom for DQ 2816-A 250 2816A 2816A eeprom INTEL D 2816 intel 2816 eeprom 2816A vpp eeprom 2816A ic rom 2816 PDF

    intel 8155

    Abstract: 8155 intel microprocessor architecture INTEL 8155 PIN DETAILS 8155 intel microprocessor pin diagram 8155 intel microprocessor block diagram M2816 microprocessors interface 8086 to 8155 block diagram of intel 8155 chip INTEL 8155 PIN INTEL 8155 PINOUT
    Text: in t e i M2816 16K 2K x 8 ELECTRICALLY ERASABLE PROM M IL IT A R Y • HMOS*-E FLOTOX Cell Design ■ Conforms to JEDEC Byte-Wide Family Standard ■ Reliable Floating Gate Technology ■ Microprocessor Compatible Architecture ■ Very Fast Access Time — 300 ns Max. — M2816


    OCR Scan     		M2816 M2816 AP-102 AP-101 AFN-01803A intel 8155 8155 intel microprocessor architecture INTEL 8155 PIN DETAILS 8155 intel microprocessor pin diagram 8155 intel microprocessor block diagram microprocessors interface 8086 to 8155 block diagram of intel 8155 chip INTEL 8155 PIN INTEL 8155 PINOUT PDF

    CI EEPROM 2816

    Abstract: eeprom 2816 2816A eeprom 2816A eeprom 2816A 2816 eeprom seeq 2816A seeq 2816 2816A/AH-300 Seeq Technology 2816A
    Text: 2 8 1 6 A /2 8 1 6A H 5 5 1 6 A /5 5 1 6 A H Timer E2 16K Electrically Erasable PROMs Technology, Incorporated August 1992 Features Description • Military and Extended Temperature Range • -SS°C to + 125°C, Operation Military . _ 40° C to +85° C, Operation (Extended)


    OCR Scan     		816A/2816AH 516A/5516AH MD400102/A 816A/2816AH 816A-10K MD400102/A CI EEPROM 2816 eeprom 2816 2816A eeprom 2816A eeprom 2816A 2816 eeprom seeq 2816A seeq 2816 2816A/AH-300 Seeq Technology 2816A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 7 H C 1 2 8 U.V. 128K Erasable CMOS 16K X 8 EPROM I Product Specification FEATURES DESCRIPTION PIN CONFIGURATION • Address access time: - 27HC128-55 55ns max - 27HC128-45 45ns max • Operating lcc: 110mA max • 3-State outputs • JEDEC standard 24-pin DIP


    OCR Scan     		27HC128 24-pin PDF

    XL46C16-55

    Abstract: XL46C16-60 XL46C16-70 XL46C16-85 XL46C32-70 XL46C32-85 BIPOLAR PROM PROGRAMMING SPECIFICATION
    Text: m ic r o e l e c t r o n ic s XL46C16 XL46C32 . IN C Preliminary Data Sheet February 1985 FEATURES • 2048 x 8 Bit XL46C16 and 4096 x 8 Bit (XL46C32) CMOS E2PROMS ■ High Speed Read Access — XL46C16: 55 ns — XL46C32: 70 ns ■ Bipolar PROM Socket Compatibility


    OCR Scan     		XL46C16 XL46C32 XL46C16) XL46C32) XL46C16: XL46C32: 110mA XL46C16 768tents XL46C16-55 XL46C16-60 XL46C16-70 XL46C16-85 XL46C32-70 XL46C32-85 BIPOLAR PROM PROGRAMMING SPECIFICATION PDF

    cerdip z PACKAGE

    Abstract: A4 marking diode dip N82S191 WS57C191C WS57C191C-35DMB WS57C191C-45DMB WS57C191C-55DMB WS57C291C
    Text: WS57C191C/291C MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 35 ns — t CS = 20 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming


    Original     		WS57C191C/291C Am27S191/291 N82S191 WS57C191C/291C Bipo-45DMB WS57C191C-55DMB MIL-STD-883C cerdip z PACKAGE A4 marking diode dip WS57C191C WS57C191C-35DMB WS57C191C-45DMB WS57C191C-55DMB WS57C291C PDF

    Untitled

    Abstract: No abstract text available
    Text: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — 45 ns • Low Power Consumption • Immune to Latch-UP • Fast Programming — Up to 200 mA


    OCR Scan     		WS57C191B/291B Am27S191/291 N82S191 WS57C191 B/291 MIL-STD-883C WS57C291B-45TMB* PDF

    28HC291L

    Abstract: AT28HC291-45DI 28HC291
    Text: AT28HC291/L Features • • • • • • • • • • Fast Access Time - 35 ns Low Power Dissipation 100 nA Standby Current AT28HC291L 80 mA Active Current E2PROM Technology -10 0 % Reprogrammable Direct Replacement for Bipolar PROMs Reprog rammable 1000 times


    OCR Scan     		AT28HC291/L AT28HC291L) 300-mll AT28HC291/291L AT28HC291 AT28HC291L Military/883C Military/883 AT28HC291L-55DC AT28HC291L-55LC 28HC291L AT28HC291-45DI 28HC291 PDF

    Untitled

    Abstract: No abstract text available
    Text: AT28HC191/L Features • • • • • • • • • • Fast Access Time - 35 ns Low Power Dissipation 100 |xA Standby Current AT28HC191L 80 mA Active Current E2PROM Technology -100% Reprogrammable Direct Replacement for Bipolar PROMs Reprogrammable 1000 times


    OCR Scan     		AT28HC191/L AT28HC191L) 600-mil AT28HC191/191L AT28HC191 AT28HC191L AT28HC191L-45DC AT28HC191L-45PC AT28HC191L-45DI AT28HC191L-45PI PDF