Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs
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144PIN
PC133
256MB
16MX16
TS32MSS64V6G
32Mx64
TS32MSS64V6G
JEP-108E
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M368L1624DTL
Abstract: No abstract text available
Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History
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M368L1624DTL
184pin
128MB
16Mx64
16Mx16
64-bit
M368L1624DTL
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SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
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KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
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PDF
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K4S56163LC
Abstract: No abstract text available
Text: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.
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K4S56163LC-R
16Mx16
54CSP
16Bit
K4S56163LC
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PDF
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SAMSUNG MCP
Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.
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KBC00B7A0M
16Mx16)
4Mx16)
512Kx16)
100pF
111-Ball
SAMSUNG MCP
MCP MEMORY
dQ8F
SAMSUNG MCP Qualification Report
MCP NAND
SAMSUNG 256Mb mcp Qualification Reliability
SAMSUNG 256Mb NAND Flash Qualification Reliability
UtRAM Density
MCP Samsung
SAMSUNG NOR Flash Qualification Report
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PDF
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K4S561633C
Abstract: No abstract text available
Text: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.
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K4S561633C-R
16Mx16
54CSP
16Bit
K4S561633C
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K4S561632C
Abstract: M464S1654CTS
Text: M464S1654CTS PC133/PC100 SODIMM M464S1654CTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654CTS is a 16M bit x 64 Synchro- • Performance range nous Dynamic RAM high density memory module. The Samsung M464S1654CTS consists of four CMOS 16M x 16 bit with
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M464S1654CTS
PC133/PC100
M464S1654CTS
16Mx64
16Mx16,
144-pin
100MHz
K4S561632C
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IS46R16160B
Abstract: zentel is43r16160b
Text: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/
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IS43R83200B,
IS46R83200B
IS43R16160B,
IS46R16160B
32Mx8,
16Mx16
256Mb
conx16
66-pin
IS46R16160B
zentel
is43r16160b
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Untitled
Abstract: No abstract text available
Text: M470L1624DT0 200pin DDR SDRAM SODIMM 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM 200pin SODIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.1 Jan. 2002 M470L1624DT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release.
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M470L1624DT0
200pin
128MB
16Mx64
16Mx16
64-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V
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MS18R1622
288Mbit
16Mx18)
288Mb
16K/32ms
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Untitled
Abstract: No abstract text available
Text: 200PIN DDR266 Unbuffered SO-DIMM 128MB With 16Mx16 CL2.5 TS16MSD64V6G Description Placement The TS16MSD64V6G is a 16M x 64bits Double Data Rate SDRAM high-density for DDR266.The TS16MSD64V6G consists of 4pcs CMOS 16Mx16 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil
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200PIN
DDR266
128MB
16Mx16
TS16MSD64V6G
TS16MSD64V6G
64bits
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PDF
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M368L1624BT1
Abstract: PC200
Text: M368L1624BT1 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.9 June. 2001 Rev. 0.9 June. 2001 184pin Unbuffered DDR SDRAM MODULE M368L1624BT1 Revision History
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M368L1624BT1
184pin
128MB
16Mx64
16Mx16
64-bit
133Mhz)
M368L1624BT1
PC200
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nanya
Abstract: NT128S64VH4A0GM NT128S64VH4A0GM-75B NT128S64VH4A0GM-7K NT128S64VH4A0GM-8B
Text: NT128S64VH4A0GM 128MB : 16M x 64 SDRAM SODIMM 16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Features l l 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Programmable Operation:
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NT128S64VH4A0GM
128MB
16Mx64
16Mx16,
13/9/2TECHNOLOGY
010Max
nanya
NT128S64VH4A0GM
NT128S64VH4A0GM-75B
NT128S64VH4A0GM-7K
NT128S64VH4A0GM-8B
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K4S561633C
Abstract: K4S561633C-RL
Text: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).
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K4S561633C-RL
16Mx16
54CSP
256Mb
K4S561633C
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Untitled
Abstract: No abstract text available
Text: UG216C3611GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3611GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3611GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAM in SOJ Package and 2 pcs of ABT16
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UG216C3611GJG
72Pin
16Mx1
ABT16
1250mil)
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we 510
Abstract: ras 510 UG216C3261GJG 45388
Text: UG216C3261GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3261GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3261GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Packages mounted on 72 Pin
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UG216C3261GJG
72Pin
16Mx1
we 510
ras 510
45388
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Untitled
Abstract: No abstract text available
Text: UG216E3684HKG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216E3684HKG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3684HKG(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAMs in 400mil Package and 4 pcs of 16Mx1
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UG216E3684HKG
72Pin
16Mx4
400mil
16Mx1
300mil
1500mil)
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ras 510
Abstract: we 510 UG216C3211GJG
Text: UG216C3211GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3211GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3211GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16
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UG216C3211GJG
72Pin
16Mx1
ABT16
ras 510
we 510
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HYM72V16M636AT6
Abstract: RA12
Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636AT6 Series DESCRIPTION The Hyundai HYM72V16M636AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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16Mx64
PC133
16Mx16
HYM72V16M636AT6
16Mx64bits
16Mx16bits
400mil
54pin
168pin
RA12
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PDF
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RA12
Abstract: No abstract text available
Text: 32Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T6 Series DESCRIPTION The Hyundai HYM72V32M636T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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32Mx64
PC133
16Mx16
HYM72V32M636T6
32Mx64bits
16Mx16bits
400mil
54pin
168pin
RA12
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PDF
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Untitled
Abstract: No abstract text available
Text: UG216C3674HKG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216C3674HK(G)T is a 16,777,216 bits by 36 SIMM module.The UG216C3674HK(G)T is assembled using 8 pcs of 16Mx4 4K refresh DRAM in 400mil Package and 4 pcs of 16Mx1
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UG216C3674HKG
72Pin
UG216C3674HK
16Mx4
400mil
16Mx1
300mil
1500mil)
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PDF
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Untitled
Abstract: No abstract text available
Text: UG216E3611GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3611GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3611GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16
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UG216E3611GJG
72Pin
16Mx1
ABT16
1250mil)
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IS43DR83200A
Abstract: IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32
Text: IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 stacked die DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle
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IS43DR83200A
IS43/46DR16160A,
IS43DR32160A
32Mx8,
16Mx16,
16Mx32
18-compatible)
IS43DR32160A-37CBLI
400Mhz
IS43DR32160A-5BBLI
IS43DR83200A
IS43DR16160A-3DBLI datasheet
IS43DR16160A-37CBLI
IS43DR83200A-37CBLI
IS43DR32160A
DDR2 x32
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IS42VM16160D-8TLI
Abstract: IS42VM83200D
Text: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42VM83200D
IS42VM16160D
IS42VM32800D
32Mx8,
16Mx16,
8Mx32
256Mb
IS42VM16160D-8TLI
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PDF
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