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    17-50 TRANSISTOR Search Results

    17-50 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    17-50 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NF 022

    Abstract: E6327 Q67000-S220
    Text: BSP 17 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = 2.1 . 4.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 17 50 V 3.2 A 0.1 Ω SOT-223 BSP 17 Type BSP 17 Ordering Code


    Original     		PDF OT-223 Q67000-S220 E6327 Sep-12-1996 NF 022 E6327 Q67000-S220

    BLD6G21L-50

    Abstract: BLD6G21LS-50 4350B
    Text: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution


    Original     		PDF BLD6G21L-50; BLD6G21LS-50 BLD6G21L-50 BLD6G21LS-50 4350B

    Untitled

    Abstract: No abstract text available
    Text: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using


    Original     		PDF BLD6G22L-50; BLD6G22LS-50 BLD6G22L-50 BLD22LS-50

    Untitled

    Abstract: No abstract text available
    Text: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution


    Original     		PDF BLD6G21L-50; BLD6G21LS-50 BLD6G21L-50 BLD6G21LS-50

    BLD6G22L-150BN/2

    Abstract: BLD6G22L 4350B capacitor 82j 076MM BLD6G22L-150BN/BLD6G22L
    Text: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using


    Original     		PDF BLD6G22L-50; BLD6G22LS-50 BLD6G22L-50 BLD22LS-50 BLD6G22L-150BN/2 BLD6G22L 4350B capacitor 82j 076MM BLD6G22L-150BN/BLD6G22L

    STD17N05

    Abstract: STD17N06
    Text: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD17N05 STD17N06 100oC 175oC O-251) O-252) O-251 O-252 STD17N05 STD17N06

    pb5350

    Abstract: transistor marking c y pb5350 mosfet handbook PNP TRANSISTOR SOT223 PBSS4350Z PBSS5350Z
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Jul 17 2001 Nov 13 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z FEATURES


    Original     		PDF M3D087 PBSS5350Z SCA73 613514/02/pp12 pb5350 transistor marking c y pb5350 mosfet handbook PNP TRANSISTOR SOT223 PBSS4350Z PBSS5350Z

    STD17N05L

    Abstract: STD17N06L
    Text: STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05L 50 V < 0.085 Ω 17 A STD17N06L 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD17N05L STD17N06L 100oC 175oC O-251) O-252) O-251 O-252 STD17N05L STD17N06L

    MwT-1771

    Abstract: SOLAR TRANSISTOR
    Text: MwT-17 500 MHz-12 GHz High Linearity Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 50 FEATURES 50 63 279 90 65 50 116 50 116 1130 116 50 CHIP THICKNESS = 125 50 65 • 1 WATT POWER OUTPUT WITH HIGH LINEARITY • HIGH ASSOCIATED GAIN • 0.8 MICRON REFRACTORY METAL/GOLD GATE


    Original     		PDF MwT-17 Hz-12 MwT-17 MwT-1771 SOLAR TRANSISTOR

    PBSS4250X

    Abstract: PBSS5250X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat BISS transistor Objective specification 2003 Jun 17 Philips Semiconductors Objective specification 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D109 PBSS5250X SC-62) SCA75 613514/01/pp8 PBSS4250X PBSS5250X

    PBSS4250X

    Abstract: PBSS5250X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 17 2004 Nov 04 Philips Semiconductors Product specification 50 V, 2 A PNP low VCEsat (BISS) transistor


    Original     		PDF M3D109 PBSS5250X SC-62) SCA76 R75/02/pp9 PBSS4250X PBSS5250X

    PB5350

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product specification 2001 Jul 17 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original     		PDF M3D087 PBSS5350Z OT223 PBSS4350Z. PBSS5350Z 613514/01/pp12 PB5350

    PBSS4250X

    Abstract: PBSS5250X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4250X 50 V, 2 A NPN low VCEsat BISS transistor Objective specification 2003 Jun 17 Philips Semiconductors Objective specification 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D109 PBSS4250X SC-62) SCA75 613514/01/pp8 PBSS4250X PBSS5250X

    PBSS4250X

    Abstract: PBSS5250X 08 SC-62
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4250X 50 V, 2 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 17 2004 Nov 08 Philips Semiconductors Product specification 50 V, 2 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D109 PBSS4250X SC-62) SCA76 R75/02/pp9 PBSS4250X PBSS5250X 08 SC-62

    PBSS4250X

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS4250X 50 V, 2 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jun 17 2004 Nov 08 NXP Semiconductors Product data sheet 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X


    Original     		PDF M3D109 PBSS4250X SC-62) R75/02/pp9 PBSS4250X

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jun 17 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X


    Original     		PDF M3D109 PBSS5250X SC-62) R75/02/pp9

    STD17N05

    Abstract: STD17N06
    Text: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD17N05 STD17N06 100oC 175oC O-251) O-252) O-251 O-252 STD17N05 STD17N06

    STD17N05

    Abstract: STD17N06
    Text: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD17N05 STD17N06 100oC 175oC O-251) O-252) O-251 O-252 STD17N05 STD17N06

    STD17N05

    Abstract: STD17N06
    Text: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD17N05 STD17N06 100oC 175oC O-251) O-252) O-251 O-252 STD17N05 STD17N06

    STD17N05L

    Abstract: STD17N06L
    Text: STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V DSS R DS on ID STD17N05L TYPE 50 V < 0.085 Ω 17 A STD17N06L 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD17N05L STD17N06L 100oC 175oC O-251) O-252) O-251 O-252 STD17N05L STD17N06L

    PBSS4250X

    Abstract: PBSS5250X NXP MARKING 1l
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jun 17 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250X


    Original     		PDF M3D109 PBSS5250X SC-62) R75/02/pp9 PBSS4250X PBSS5250X NXP MARKING 1l

    PH marking code sot223

    Abstract: No abstract text available
    Text: SIEMENS BSP 17 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • ^ G S th = 2 .1 Type .4 .0 V ^DS(on) BSP 17 Vds 50 V Type BSP 17 Ordering Code Q67000-S220 3.2 A 0.1 fl Package Marking SOT-223 BSP 17 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S220 E6327 PH marking code sot223

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 17 SIPM O S Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • ^GS th = 2-1 4.0 V Type Vbs b f l DS(on) Package Marking BSP 17 50 V 3.2 A 0.1 ß SOT-223 BSP 17 Type BSP 17 Ordering Code Q67000-S220 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S220 E6327 fl235b05 235b05

    Untitled

    Abstract: No abstract text available
    Text: 5YMSEMI SEMICONDUCTOR BC8 17-16LT1 SOT -23 Plastic Encapsulate Transistors TRANSISTOR NPN BC8 17-25LT1 BC8 17-40LT1 FEATURES Power dissipation Pc« : 0.3 W (Tamb=25 °C) Collector current Icm : 05 Collector base voltage A V cbo : 50 V Operating and storage junction temperature range


    OCR Scan     		PDF 17-16LT1 17-25LT1 17-40LT1 OT-23 950TPY 550REF 037TPY 022REF