174MHZ Search Results

136-174MHz

Abstract: ra60h1317m1a-101 RA60H1317M1A RA60H1317M1 174MHZ
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TENTATIVE DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to

RA60H1317M1

Contextual Info: <Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of the

X8200

Abstract: x7201 modem radio VHF transmitter 220 modem radio Repeater rf MPT1329 MPT1411 X8200HP FM TRANSMITTER 3KM
Contextual Info: Synthesised Radio Modem • • • • • • • • • • • • • • X8200 X8200HP Operates on international licensed and licence free radio bands RF Bands: o 147MHz to 174MHz VHF o 400MHz to 500MHz UHF o 868MHz to 920MHz UHF Conforms to ETSI 300-220, ETSI 300-113, ETSI 300-683, MPT1329,

Contextual Info: MITSUBISHI RF POWER MODULE M67748H 150-174MHz, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm HK ® © — 11—^ — ii— © PIN : © P in RF INPUT ®VCC2 2nd. DC SUPPLY BASE BIAS 1st. DC SUPPLY RF OUTPUT FIN ®VBB ©VCC1

murata SAW

Contextual Info: NSVS1234 Apr. 2013 NewJRC SAW FILTER NSVS1234 Application 174MHz GPS-IF Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Parameter Spec. Typ. Input and Output Impedance

TB246

Contextual Info: A April 1, 20155 T TB246 Frequenccy=136-174MHz Pout=100W Gaain=14dB Vdss=12.5Vdcc Id dq=0.8A Efficciency=63% % SR726 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m April 1, 2015 120.0 17.0 90.0 16.0 60.0

RS-204-C

Contextual Info: Mobile Duplexers 144-174MHz ◆ Features - Hi-Band The 4CH and 6CH duplexers are compact units, using helical resonant cavities that are tunable over the 144 to 174MHz frequency range. They are notch type duplexers, using one-quarter wavelength cables between

RA60H1317M1

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to

2km fm transmitter

Contextual Info: Synthesised Radio Modem • • • • • • • • • • • • • • X8200 X8200HP Operates on international licensed and licence free radio bands RF Bands: o 147MHz to 174MHz VHF o 400MHz to 500MHz UHF o 868MHz to 920MHz UHF Conforms to ETSI 300-220, ETSI 300-113, ETSI 300-683,

RA60H1317M1

Abstract: RA60H1317M1A RF MODULE CIRCUIT DIAGRAM for channel 4 RF MOSFET MODULE RD 15 mitsubishi 136-174MHz DD1002 mosfet marking code gg RF MODULE RA60H1317M1A MITSUBISHI RF POWER MODULE
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to

Contextual Info: MITSUBISHI RF POWER MODULE M67755H 150-174MHz, 7.2V, 7W, FM PORTABLE RADIO BLOCK DIAGRAM Dimensions in mm OUTLINE DRAWING 45±1 42 ± 1 © © R 1 .6 ± 0 .5 ¥ © — m o +1 © © D - , 0.4 ± 0.2 PIN : 5±1 9±1 9±1 5 ± 1 8.5 ± 1 © P in ( 3 6 .5

Fuji-SVEA

Abstract: transistor RF 2SC1590
Contextual Info: 2SC1590 Silicon NPN Transistor RF Power Output The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications. BEC WINTransceiver Features: High Power Gain: Gpe >/= 10dB VCC = 13.5V, PO = 6W, f = 175MHz

murata SAW

Contextual Info: NSVS1061 Apr. 2013 NewJRC SAW FILTER NSVS1061 Application 174MHz GPS-IF Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Parameter Spec. Typ. Input and Output Impedance

RA60H1317M1

Abstract: RA60H1317M1A-201 RA60H1317M1A 174MHZ RA60H1317M1A201 RA60H13 mitsubishi electric 174-MHz
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to

Contextual Info: MITSUBISHI RF POWER MODULE M67748HR 150-174MHz, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm ® ghh[ > h — II— © PIN : © P in : RF INPUT ®VCC1 : 1st. DC SUPPLY ® VB B : BASE BIAS ® VC C 2 : 2nd. DC SUPPLY ®PO

M68731HM

Contextual Info: MITSUBISHI RF POWER MODULE M68731HM SILICON MOS FET POWER AMPLIFIER, 145-174MHz, 6.5W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY

RA60H1317M1A

Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to

Contextual Info: <Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of the

B818

Contextual Info: MACP-010121-B8180X E-Series RF 20dB Coupler 136-174MHz Rev. V2 Schematic Features • Typical 19dB Coupling  Surface Mount  Tape and reel packaging available  260°C Reflow Compatible  RoHS* compliant Description M/A-COM’ s MACP-010121-B8180X is a RoHS Compliant 20dB

Contextual Info: Specification for an LC Triplexer Filter MtronPTI P/N LF9287 I. General & Electrical Requirements: 1. Filter 1 Passband: 136MHz to 174MHz Insertion Loss IL, within the passband : < 0.8dB Return Loss (within the Passband): > 17dB Input Signal Power: ≤ 60-watts CW

RA80H1415M1

Contextual Info: < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz

Contextual Info: TH72005 315MHz FSK/ASK Transmitter Features ! ! ! ! ! ! ! ! Fully integrated PLL-stabilized VCO Frequency range from 290 MHz to 350 MHz Single-ended RF output FSK through crystal pulling allows modulation from DC to 40 kbit/s High FSK deviation possible for wideband data

LC filter

Contextual Info: JXWBLB-T-BP-207-66-LS 207MHz LC Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-207-66-LS 1 JXWBLB-T-BP-207-66-LS 207MHz LC Band Pass Filter Technical Specification 207 Center Frequency MHz 1dB Band Width(MHz) 66 min Insertion Loss (fo)(dB)

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040