M395T6553GZ4-CE66
Abstract: No abstract text available
Text: SERIAL PRESENCE DETECT M395T6553GZ4-E66 512MB FBDIMM : M395T6553GZ4-CE66 Byte # Function Supported Hex Value E66 E66 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage
|
Original
|
M395T6553GZ4-E66
512MB
M395T6553GZ4-CE66
116Byte,
256Byte,
176Byte
M395T6553GZ4-CE66
|
PDF
|
M395T2953GZ4-CE66
Abstract: CE66 TRP15ns
Text: SERIAL PRESENCE DETECT M395T2953GZ4-CE66 1GB FBDIMM : M395T2953GZ4-CE66 Byte # Function Supported Hex Value CE66 CE66 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage
|
Original
|
M395T2953GZ4-CE66
116Byte,
256Byte,
176Byte
M395T2953GZ4-CE66
CE66
TRP15ns
|
PDF
|
M395T5750GZ4-CE66
Abstract: CE66
Text: SERIAL PRESENCE DETECT M395T5750GZ4-CE66 2GB FBDIMM : M395T5750GZ4-CE66 Byte # Function Supported Hex Value CE66 CE66 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage
|
Original
|
M395T5750GZ4-CE66
116Byte,
256Byte,
176Byte
M395T5750GZ4-CE66
CE66
|
PDF
|
M395T1G60QJ4-CE68
Abstract: CE68
Text: SERIAL PRESENCE DETECT M395T1G60QJ4-CE68 8GB FBDIMM : M395T1G60QJ4-CE68 Byte # Function Supported Hex Value CE68 CE68 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage
|
Original
|
M395T1G60QJ4-CE68
116Byte,
256Byte,
176Byte
M395T1G60QJ4-CE68
CE68
|
PDF
|
M395T2953CZ4-CD50
Abstract: CD50 M395T2953CZ4
Text: SERIAL PRESENCE DETECT M395T2953CZ4-CD50/CE60 1GB FBDIMM :M395T2953CZ4-CD50/CE60 Contents : Byte # Function described Function Supported CD50 CE60 Hex Value CD50 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD Byte Use : 176Byte CE60 Number of Serial PD Bytes Written / SPD Device Size / CRC
|
Original
|
M395T2953CZ4-CD50/CE60
116Byte,
256Byte,
176Byte
M395T2953CZ4-CD50
CD50
M395T2953CZ4
|
PDF
|
M395T1G60QJ4-CF78
Abstract: 25H40
Text: SERIAL PRESENCE DETECT M395T1G60QJ4-CF78 8GB FBDIMM : M395T1G60QJ4-CF78 Byte # Function Supported Hex Value CF78 CF78 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage
|
Original
|
M395T1G60QJ4-CF78
116Byte,
256Byte,
176Byte
M395T1G60QJ4-CF78
25H40
|
PDF
|
S3P826
Abstract: S3C826A S3P826A INT8-INT11 dot led display large size with circuit diagram TB826 208QFP
Text: 21-S3-C826A/P826A-112002 USER'S MANUAL S3C826A/P826A 8-Bit CMOS Microcontroller Revision 1 S3C826A/P826A 1 PRODUCT OVERVIEW PRODUCT OVERVIEW S3C8-SERIES MICROCONTROLLERS Samsung's S3C8 series of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range
|
Original
|
21-S3-C826A/P826A-112002
S3C826A/P826A
SEG85/SOM10/P14
SEG87/COM8/P14
COM6/P15
COM4/P15
COM2/P15
50-Pin
TB826A
S3P826
S3C826A
S3P826A
INT8-INT11
dot led display large size with circuit diagram
TB826
208QFP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 TS128MFB72V6J-T Description MBIST and IBIST Test functions The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Hot add-on and Hot Remove Capability Fully Buffered DIMM. The TS128MFB72V6J-T consists of Transparent mode for DRAM test support
|
Original
|
240PIN
64Mx8
TS128MFB72V6J-T
TS128MFB72V6J-T
72bits
DDR2-667
18pcs
64Mx8its
240-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TS128MFB72V6J-T 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 Description Hot add-on and Hot Remove Capability The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Transparent mode for DRAM test support Fully Buffered DIMM. The TS128MFB72V6J-T consists of
|
Original
|
TS128MFB72V6J-T
240PIN
64Mx8
TS128MFB72V6J-T
72bits
DDR2-667
18pcs
64Mx8its
240-pin
|
PDF
|
M471B5673FH0-CF8
Abstract: M471B5673 ddr3 spd samsung M471B5673FH0-CF8/CH9/CK0
Text: SERIAL PRESENCE DETECT M471B5673FH0-CF8/CH9/CK0 Organization : 256M x 64 Composition : 128M x 8 * 16ea Used component part # : K4B1G0846F-HCF8/CH9/CK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component
|
Original
|
M471B5673FH0-CF8/CH9/CK0
K4B1G0846F-HCF8/CH9/CK0
8K/64ms
M471B5673FH0-CF8
M471B5673
ddr3 spd samsung
M471B5673FH0-CF8/CH9/CK0
|
PDF
|
c826a
Abstract: S3P826A FM24653 ISO-14001 S3C826A P826A QFP28 144-QFP-2828-AN TB826 TB826a
Text: 21-S3-C826A/P826A-112002 USER'S MANUAL S3C826A/P826A 8-Bit CMOS Microcontroller Revision 1 S3C826A/P826A 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at
|
Original
|
21-S3-C826A/P826A-112002
S3C826A/P826A
SEG85/SOM10/P14
SEG87/COM8/P14
COM6/P15
COM4/P15
COM2/P15
50-Pin
TB826A
c826a
S3P826A
FM24653
ISO-14001
S3C826A
P826A
QFP28
144-QFP-2828-AN
TB826
TB826a
|
PDF
|
s3f82nb
Abstract: TB82NB FM24653 H-26 ISO-14001
Text: USER'S MANUAL S3F82NB 8-BIT CMOS MICROCONTROLLERS May 2009 Revision 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2009 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
|
Original
|
S3F82NB
10Kbytes
95/98/2000/XP)
128QFP
s3f82nb
TB82NB
FM24653
H-26
ISO-14001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Fully Buffered DIMM 2GB With 128Mx4 CL5 TS256MFB72V6K-T Description Programmable CAS Latency: 3, 4, 5 The TS256MFB72V6K-T is a 256M x 72bits DDR2-667 Automatic DDR2 DRAM bus and channel calibration Fully Buffered DIMM. The TS256MFB72V6K-T consists
|
Original
|
240PIN
128Mx4
TS256MFB72V6K-T
TS256MFB72V6K-T
72bits
DDR2-667
36pcs
128Mx4bits
240-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Fully Buffered DIMM 512MB With 64Mx8 CL5 TS64MFB72V6J-T Description Hot add-on and Hot Remove Capability The TS64MFB72V6J-T is a 64M x 72bits DDR2-667 Fully Transparent mode for DRAM test support Buffered DIMM. The TS64MFB72V6J-T consists of 9 pcs
|
Original
|
240PIN
512MB
64Mx8
TS64MFB72V6J-T
TS64MFB72V6J-T
72bits
DDR2-667
64Mx8its
240-pin
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Advance Information TM57PR40 8-Bit Microcontroller Data Sheet Tenx reserves the right to change or discontinue this product without notice. tenx technology inc. Preliminary 1 tenx technology, inc. Rev 1.2, 2008/08/13 Advance Information DS-TM57PR40 FEATURE
|
Original
|
TM57PR40
DS-TM57PR40
11-bit
10KHz
100KHz
|
PDF
|
samsung dimm DDR3 SPD
Abstract: samsung DDR3 SDRAM 2GB M378B5273 M378B5273BH1-CF7 samsung K4B2G0846B DDR3 SPD ddr3 datasheet samsung ddr3 samsung dimm DDR3 COLUMN10
Text: SERIAL PRESENCE DETECT M378B5273BH1-CF7/CF8/CH9/CK0 Organization : 512M x 64 Composition : 256M x 8 * 16ea Used component part # : K4B2G0846B-HCF7/CF8/CH9/CK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component
|
Original
|
M378B5273BH1-CF7/CF8/CH9/CK0
K4B2G0846B-HCF7/CF8/CH9/CK0
8K/64ms
116Byte,
256Byte,
176Byte
samsung dimm DDR3 SPD
samsung DDR3 SDRAM 2GB
M378B5273
M378B5273BH1-CF7
samsung K4B2G0846B
DDR3 SPD
ddr3 datasheet
samsung ddr3
samsung dimm DDR3
COLUMN10
|
PDF
|
samsung dimm DDR3 SPD
Abstract: CF701 inphi SSTE32882 HCH9 samsung DDR3 SDRAM 2GB GS-04 M393B1K70 RC10 RC11
Text: SERIAL PRESENCE DETECT M393B1K70BH1-CF701/CF801/CH901/CK001 Organization : 1G x 72 Composition : 512M x 4 * 36ea Used component part # : K4B2G0446B-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component
|
Original
|
M393B1K70BH1-CF701/CF801/CH901/CK001
K4B2G0446B-HCF7/HCF8/HCH9/HCK0
8K/64ms
GS-04
CF701
CF801
CH901
CF701
CF801
samsung dimm DDR3 SPD
inphi
SSTE32882
HCH9
samsung DDR3 SDRAM 2GB
M393B1K70
RC10
RC11
|
PDF
|
samsung dimm DDR3 SPD
Abstract: M378B2873EH1-CF7 samsung ddr3 Samsung ddr3 1600 SDRAM hcf7 K4B1G0846E DDR3 DIMM SPD JEDEC DDR3 SPD sensor ddr3 spd samsung
Text: SERIAL PRESENCE DETECT M378B2873EH1-CF7/CF8/CH9/CK0 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4B1G0846E-HCF7/CF8/CH9/CK0 # of rows in module : 1 Row # of banks in component : 8 Banks Feature : 30mm height & single sided component
|
Original
|
M378B2873EH1-CF7/CF8/CH9/CK0
K4B1G0846E-HCF7/CF8/CH9/CK0
8K/64ms
samsung dimm DDR3 SPD
M378B2873EH1-CF7
samsung ddr3
Samsung ddr3 1600 SDRAM
hcf7
K4B1G0846E
DDR3 DIMM SPD JEDEC
DDR3 SPD sensor
ddr3 spd samsung
|
PDF
|
intel 80C51 ALU
Abstract: ST90R50 st7275 68hc12 motorola linker P80C32GBPN 68HC05 68HC11 68HC12 ST7 series MCU 80C51
Text: APPLICATION NOTE ST7 AND ST9 PERFORMANCE BENCHMARKING by A. Albella, G. Bouvier and J. Pauvert ABSTRACT SGS-THOMSON has developed a set of test routines relevant to 8-bit and low-end 16-bit microcontroller applications to evaluate computing performance and interrupt processing
|
Original
|
16-bit
intel 80C51 ALU
ST90R50
st7275
68hc12 motorola linker
P80C32GBPN
68HC05
68HC11
68HC12
ST7 series MCU
80C51
|
PDF
|
wiring diagram brushless AC motor
Abstract: IEC555-1 2x27k AN1590 IR2112 circuit motors simple dc motor model MOTOROLA sensorless brushless dc controller IR2112 application note 300w dc motor speed controller LM339n as motor controller
Text: Order this document by AN1627/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1627 LOW COST HIGH EFFICIENCY SENSORLESS DRIVE FOR BRUSHLESS DC MOTOR USING MC68HC 7 05MC4 By Leos Chalupa Roznov System Application Laboratory Motorola, Roznov pod Radhostem, Czech Republic
|
Original
|
AN1627/D
AN1627
MC68HC
05MC4
MC68HC05MC4)
wiring diagram brushless AC motor
IEC555-1
2x27k
AN1590
IR2112 circuit
motors simple dc motor model
MOTOROLA sensorless brushless dc controller
IR2112 application note
300w dc motor speed controller
LM339n as motor controller
|
PDF
|
ST90R50
Abstract: 8 BIT ALU cisc architecture in 8051 A7800 P80C32GBPN arithmetic instruction for microcontroller 68HC11 8 bit to two 7 segment circuit P51XAG35 iar ide version 3.5 h8 nec mcu
Text: AN910 APPLICATION NOTE ST7 AND ST9 PERFORMANCE BENCHMARKING INTRODUCTION STMicroelectronics has developed a set of test routines related to 8-bit and low-end 16-bit microcontroller applications to evaluate computing performance and interrupt processing performance of microcontroller cores. These routines have been implemented on ST7 and
|
Original
|
AN910
16-bit
ST90R50
8 BIT ALU
cisc architecture in 8051
A7800
P80C32GBPN
arithmetic instruction for microcontroller 68HC11
8 bit to two 7 segment circuit
P51XAG35
iar ide version 3.5 h8
nec mcu
|
PDF
|
CF-800
Abstract: samsung DDR3 SDRAM 2GB CF700 HCF8 M471B5273CH0 CF800 CF-700 CH900 Samsung ddr3 1600 SDRAM k4b2g0846c
Text: SERIAL PRESENCE DETECT M471B5273CH0-CF700/CF800/CH900/CK000 Organization : 512M x 64 Composition : 256M x 8 * 16ea Used component part # : K4B2G0846C-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component
|
Original
|
M471B5273CH0-CF700/CF800/CH900/CK000
K4B2G0846C-HCF7/HCF8/HCH9/HCK0
8K/64ms
CF700
CF800
CH900
CK000
CF-800
samsung DDR3 SDRAM 2GB
HCF8
M471B5273CH0
CF-700
Samsung ddr3 1600 SDRAM
k4b2g0846c
|
PDF
|
M471B2873EH1-CF7
Abstract: Samsung ddr3 1600 SDRAM samsung ddr3 ddr3 spd samsung
Text: SERIAL PRESENCE DETECT M471B2873EH1-CF7/CF8/CH9/CK0 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4B1G0846E-HCF7/CF8/CH9/CK0 # of rows in module : 1 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component
|
Original
|
M471B2873EH1-CF7/CF8/CH9/CK0
K4B1G0846E-HCF7/CF8/CH9/CK0
8K/64ms
116Byte,
256Byte,
176Byte
M471B2873EH1-CF7
Samsung ddr3 1600 SDRAM
samsung ddr3
ddr3 spd samsung
|
PDF
|
SSTE32882
Abstract: samsung dimm DDR3 SPD HCH9 CF804 LVDDR3 K4B1G0846E samsung ddr3 RC10 RC11 RC12
Text: SERIAL PRESENCE DETECT M393B5673EH1-CF704/CF804/CH904/CK004 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component
|
Original
|
M393B5673EH1-CF704/CF804/CH904/CK004
K4B1G0846E-HCF7/HCF8/HCH9/HCK0
8K/64ms
CF704
SSTE32882
samsung dimm DDR3 SPD
HCH9
CF804
LVDDR3
K4B1G0846E
samsung ddr3
RC10
RC11
RC12
|
PDF
|