eeprom PROGRAMMING tutorial
Abstract: 3062009
Text: Component Wizard User Manual version 1.55 Copyright 2010 Freescale Semiconductor, Inc. PROCESSOR EXPERT is trademark of Freescale Semiconductor, Inc. -1- CONTENTS 1. Introduction 4 2. Basic Terms 5 2.1. Inheritance 7 2.1.1. Inheritance scheme 2.1.2. Options of Methods Inheritance
|
Original
|
PDF
|
|
P17AD
Abstract: PV14 circiut diagram LPC47N354 CH747 Mitsubishi DA U31 quanta schematics ich6-m LPC47N254 pv14 diagram circiut RN45
Text: 1 2 3 4 5 6 Tonga & Tyler T2 7 8 01 VER : 3C A A AC/BATT CONNECTOR PG 32 RUN POWER SW DC/DC +3V_SRC +5VSUS Dothan PG 37 CPU VR PG 36 (478 Micro-FCPGA) PG 33 RESET CKT Thermal /FAN CTRL CLOCKS PG 31 PG 16 PG 28 PG 3,4 BATT CHARGER PG 32 4X100 / 4X133MHZ LVDS
|
Original
|
PDF
|
4X100
4X133MHZ
33MHz
PCI1510GVF
Page36
PR176
Page24
1000p/3KV
1500p/3KV
CH2150GKI11)
P17AD
PV14 circiut diagram
LPC47N354
CH747
Mitsubishi DA U31
quanta
schematics ich6-m
LPC47N254
pv14 diagram circiut
RN45
|
embedded system mini projects using 8051 free
Abstract: agriculture based electronics projects DB25 LPT 8086 microprocessor mini project circuit ic 8051 MEMORY CARD 128 KB BROSE mini projects using bread board and integrated MCU 80C535 BOSCH 7.4.9 MM486
Text: C o v e r i n g t h e E n t i r e S p e c t r u m o f E m b e d d e d C o n t r o l Trusted C167/ST10 Embedded Architecture now in phyCORE SBC ® design C o v e r i n g t h e E n t i r e S p e c t r u m phyCORE®-167CR/CS E m b e d d e d C o n t r o l Product Catalogue 2001
|
Original
|
PDF
|
C167/ST10
-167CR/CS
C167CR/CS
ST10F168
16-bit,
D-07973
D-55129
16-bit
32-bit
embedded system mini projects using 8051 free
agriculture based electronics projects
DB25 LPT
8086 microprocessor mini project circuit
ic 8051
MEMORY CARD 128 KB BROSE
mini projects using bread board and integrated
MCU 80C535
BOSCH 7.4.9
MM486
|
MGFC42V4450
Abstract: No abstract text available
Text: M IT S U B IS H I S E M IC O N D U C T O R < G a A s F E T > M G FC42V4450 4 . 4 —5 .0 G H z BAND 1 6 W INTERNALLY MATCHED GaAs FET D E S C R I P T IO N O U T L IN E D R A W IN G U n it: m illim eters inches The M G FC 42V 4450 is an internally impedance-matched
|
OCR Scan
|
PDF
|
MGFC42V4450
MGFC42V4450
-45dBc
ltem-01:
ltem-51
|
Untitled
Abstract: No abstract text available
Text: ^M ITSUBISHI FA-13205A Packaged ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The F A 1 3 2 0 5 A is a high power, high gain amplifier module used for the 13GHz-band SSPA. • High output power P i d B = 21 dBm (TYP) @ f = 1 3 . 6 - 1 4 . 1 GHz High linear power gain
|
OCR Scan
|
PDF
|
FA13205A
13GHz-band
FA-13205A
|
MGFK36V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK36V4045 14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION O U TLIN E DRAW ING The MGFK36V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
|
OCR Scan
|
PDF
|
MGFK36V4045
MGFK36V4045
17add
|
MGFK35V2228
Abstract: l012a fet 30 f 124
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 3 5 V 22 28 1 2 .2 — 1 2 .8 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 5 V 2 2 2 8 is an internally impedance matched GaAs power FET especially designed for use in 12.2 ~ 12.8
|
OCR Scan
|
PDF
|
MGFK35V2228
MGFK35V2228
-i100
l012a
fet 30 f 124
|
3SB140
Abstract: No abstract text available
Text: blllSMT O O C ^ D S SSE D MICR ON T E C H N O L O G Y INC T37 MT5C1008 DIE 128K X 8 SRAM M IC R O N MILITARY SRAM DIE 128Kx 8 SRAM WITH DUAL CHIP ENABLE FEATURES High speed: 20,25,35 and 45ns High-performance, low-power, CMOS process Easy memory expansion with CE1, CE2 and OE
|
OCR Scan
|
PDF
|
MT5C1008
128Kx
MIL-STD-883.
MT5C1008DIE
3SB140
|
MGFK35V4045
Abstract: FS21
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 14.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 .0 ~ 14.5 G H z-band am plifiers. The herm etically sealed m etal-ceram ic
|
OCR Scan
|
PDF
|
MGFK35V4045
MGFK35V4045
S22vs.
1200mA)
FS21
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785B Vi are l'niS 7 .7 — 8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an in te rna lly im p eda nce -m atche d GaAs power F ET especially designed fo r use in 7 .7 - 8 . 5
|
OCR Scan
|
PDF
|
MGFC40V7785B
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 1 4 .5 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 . 0 ~ 14.5 G H z-band amplifiers. T he herm etically sealed m etal-ceram ic
|
OCR Scan
|
PDF
|
GFK35V4045
17add
1200mA)
|
K35V4045
Abstract: No abstract text available
Text: MITSUBISHI SEM ICO ND UCTOR < G aA s FET> M G F K 35V 4045 1 4 .0 — 14.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G F K 3 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 ,0 ~ 14.5
|
OCR Scan
|
PDF
|
17add
35V4045
K35V4045
|
