Si4872DY
Abstract: No abstract text available
Text: Si4872DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4872DY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4872DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4872DY
08-Apr-05
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Si1403DL
Abstract: No abstract text available
Text: Si1403DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.180 @ VGS = –4.5 V "1.5 0.200 @ VGS = –3.6 V "1.4 0.265 @ VGS = –2.5 V "1.2 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 Marking Code
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Si1403DL
OT-363
SC-70
S-01559--Rev.
17-Jul-00
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Si1405DL
Abstract: 8 A diode A.4 SOT363 MARKING
Text: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code
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Si1405DL
OT-363
SC-70
S-01560--Rev.
17-Jul-00
8 A diode
A.4 SOT363 MARKING
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NAS1745
Abstract: NAS 1745 NAS-1745 raychem solder sleeve d-142-51 D-142-56 Raychem installation procedure rcps-100-70 J-STD-004 J-STD-006 RT-1404 NAS1
Text: SPECIFICATION CONTROL DRAWING Product Revisions Product Name D-142-50 J NAS Equiv. 1745-14 D-142-51 J 1745-15 D-142-52 J 1745-16 L1.52 L±0.06 15.75 (0.620) 15.75 (0.620) 19.05 (0.750) Product Dimensions B min 2.80 (0.110) 4.45 (0.175) 7.11 (0.280) C
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D-142-50
D-142-51
D-142-52
J-STD-006.
J-STD-004.
D-142-50/-51/-52
D000400
17-Jul-00
9-May-11
NAS1745
NAS 1745
NAS-1745
raychem solder sleeve d-142-51
D-142-56
Raychem installation procedure rcps-100-70
J-STD-004
J-STD-006
RT-1404
NAS1
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Si4953ADY
Abstract: No abstract text available
Text: Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = –10 V –4.9 0.090 @ VGS = –4.5 V –3.7 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET
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Si4953ADY
08-Apr-05
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SUU06N10-225L
Abstract: No abstract text available
Text: SUU06N10-225L New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET
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SUU06N10-225L
O-251
S-01584--Rev.
17-Jul-00
SUU06N10-225L
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SUU06N10-225L
Abstract: 40T10
Text: SUU06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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SUU06N10-225L
O-251
08-Apr-05
SUU06N10-225L
40T10
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VJ0603
Abstract: VJ0805 VJ1206 VJ1210 Vishay VJ1206
Text: High Q Dielectric Vishay Vitramon Multilayer Ceramic Chip Capacitors FEATURES • COG is an ultra-stable dielectric offering a Temperature Coefficient of Capacitance TCC of 0 ± 30PPM/°C over the entire temperature range. • Low Dissipation Factor (DF).
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30PPM/
680pF.
VJ0805,
100pF
VJ1206,
VJ0603
VJ0805
VJ1206
VJ1210
Vishay VJ1206
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CDR34BP
Abstract: CDR31BX CDR03BX
Text: MIL-PRF-55681 Vishay Vitramon Multilayer Ceramic Chip Capacitors, Qualified, Type CDR FEATURES • Military qualified products. • High reliability tested per MIL-PRF-55681. GENERAL SPECIFICATIONS NOTE: Electrical characteristics @ + 25°C unless otherwise
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MIL-PRF-55681
MIL-PRF-55681.
30PPM/
17-Jul-00
CDR34BP
CDR31BX
CDR03BX
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Untitled
Abstract: No abstract text available
Text: Si1403DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.180 @ VGS = –4.5 V "1.5 0.200 @ VGS = –3.6 V "1.4 0.265 @ VGS = –2.5 V "1.2 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 Marking Code
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Si1403DL
OT-363
SC-70
08-Apr-05
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SUD06N10-225L
Abstract: No abstract text available
Text: SUD06N10-225L New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD06N10-225L S N-Channel MOSFET
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SUD06N10-225L
O-252
01584--Rev.
17-Jul-00
SUD06N10-225L
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Si1407DL
Abstract: No abstract text available
Text: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –1.8 0.170 @ VGS = –2.5 V –1.5 0.225 @ VGS = –1.8 V –1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code
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Si1407DL
OT-363
SC-70
S-01561--Rev.
17-Jul-00
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Untitled
Abstract: No abstract text available
Text: Si4953ADY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.053 @ VGS = –10 V –4.9 0.090 @ VGS = –4.5 V –3.7 –30 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET
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Si4953ADY
18-Jul-08
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SUU06N10-225L
Abstract: No abstract text available
Text: SUU06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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SUU06N10-225L
O-251
18-Jul-08
SUU06N10-225L
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Untitled
Abstract: No abstract text available
Text: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code
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Si1405DL
OT-363
SC-70
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si1407DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –1.8 0.170 @ VGS = –2.5 V –1.5 0.225 @ VGS = –1.8 V –1.3 SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code
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Si1407DL
OT-363
SC-70
08-Apr-05
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B003A
Abstract: No abstract text available
Text: R E LEA S ED FO R PUBLICATION THIS DRAWING IS U N PU B LIS H E D . COPYRIGHT BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD A DIST REVISIONS 39 LTR DESCRIPTION fiPVD DATE REV PER 0G3C— 0289— 00 BH JG 17JUL00 STANDOFFS: UP TO 9 P O S - 2 REQD ON THE
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17JUL00
31MAR2000
AMP33743
B003A
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M 7401
Abstract: T7401 R5201 L 038 T2140 t4401 T-30401 t27201 T2400 R7201
Text: RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST REVISIONS 39 AD LTR DESCRIPTION N □ATE REV PER 0G3C— 0 2 9 9 -0 0 OWN APVD BH JG 17JUL00 D D TYP AT POSTS TIPS 0.38 [.0 1 5 ]
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17JUL00
L-010J
ENDS-102202-1
31MAR2000
AMP33743
M 7401
T7401
R5201
L 038
T2140
t4401
T-30401
t27201
T2400
R7201
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marking code vishay SILICONIX
Abstract: ic 71074
Text: SÌ1407DL Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS(V) -1 2 Id (A) •"DS(on) ( ß ) 0.130 @ VG S = -4 .5 V -1 .8 0.170 @ VGS = -2 .5 V -1 .5 0.225 @ VGs = -1 .8 V -1 .3 \V SOT-363 SC-70 (6-LEADS) Marking Code OC xx £ Lot Traceability
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1407DL
OT-363
SC-70
150cC
S-01561--
17-Jul-00
marking code vishay SILICONIX
ic 71074
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sm403
Abstract: sot363 marking qs 71072
Text: SM403PL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY Vps(V) Id (A) r D S (o n) ( ^ ) 0.180 @ VG S= —4.5 V -2 0 VP ± 1 .5 0.200 @ VGS = -3 .6 V ± 1 .4 0.265 @ VGS = -2 .5 V ± 1 .2 A <0* SOT-363 SC-70 (6-LEADS) Marking Code
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SM403PL
OT-363
SC-70
S-01559--
17-Jul-00
SM403DL
sm403
sot363 marking qs
71072
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Untitled
Abstract: No abstract text available
Text: DRAWI NG THIS MADE DRAWING 0 IN IS 4 THIRD UNPUBLISHED. COPYRIGHT 2 3 ANGLE 19 PROJECTION RELEASED BY ANP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL RI GHTS D I ST LOC ,19 G RESERVED. R EV I 5 I 0 N 5 86 p F ZONE LTR DESCRIPTION A REV PER
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0G3A-0390-00
17JUL00
12APR99
APR-99
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Untitled
Abstract: No abstract text available
Text: 3 DRAWI NG THIS P MADE DRAWING COPYRIGHT RE SERVED. AMP IN 15 THIRD ANGLE UNPUBLISHED. 19 BY PRODUCTS RELEASED AMP MAY BE 2 PROJECTION FOR LOC PUBLICATION ] N C O R P O R A T E D , HA R R I S B U R G , P A . COVERED U .S . BY AND B O R E I GN ALL INTERNATIONAL
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AD-4171
ASS5NBLI55
R55D5CT5
A555NBDI55
A5S5NBDI55
R500IR5D.
17-JUL-00
ampO1193
/home/ampO1193/edmmod/ecn
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL RIGHTS RESERVED. 5 6 4 3 1 2 ,19 AG 53 REVISIONS LTR RELEASED PER N P R 9 7 - 1 2 REV PER 0 S 1 D - 0 0 8 4 - 0 0 1 ? H O U S I N G - M A T E R I A L : LIGUI D - C R Y S T A L - P O L Y M E R
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27JUN96
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