ws dvd 290
Abstract: ws dvd 290* transistor
Text: VSM = 5200 V ITAVM = 1800 A ITRMS = 2830 A ITSM = 29000 A VT0 = 1.02 V rT = 0.320 mΩ Ω Bi-Directional Control Thyristor 5STB 17N5200 Doc. No. 5SYA1036-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology
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Original
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PDF
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17N5200
5SYA1036-03
17N5000
17N4600
17Woff
18Woff
CH-5600
ws dvd 290
ws dvd 290* transistor
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Untitled
Abstract: No abstract text available
Text: Key Parameters VSM = 5200 ITAVM = 1700 ITRMS = 2670 ITSM = 29000 VT0 = 1.02 rT = 0.320 Bi-Directional Control Thyristor V A A A V mΩ 5STB 17N5200 Doc. No. 5SYA 1036-02 July 98 Features •Two thyristors integrated into one wafer •Patented free-floating silicon technology
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Original
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PDF
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17N5200
17N5200
17N5000
17N4600
CH-5600
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Untitled
Abstract: No abstract text available
Text: VSM = 5200 V ITAVM = 1800 A ITRMS = 2830 A ITSM = 29000 A VT0 = 1.02 V rT = 0.320 mΩ Bi-Directional Control Thyristor 5STB 17N5200 Doc. No. 5SYA1036-03 Dec.00 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications
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Original
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PDF
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17N5200
5SYA1036-03
17N5200
17N5000
17N4600
CH-5600
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